Versatile wafer refining

ABSTRACT

Methods of refining using a plurality of refining elements are discussed. A refining apparatus having refining elements that can be smaller than the workpiece being refined are disclosed. New refining methods, refining apparatus, and refining elements disclosed. Methods of refining using frictional refining, chemical refining, tribochemical refining, and electrochemical refining and combinations thereof are disclosed. A refining apparatus having magnetically responsive refining elements that can be smaller than the workpiece being refined are disclosed. The refining apparatus can supply a parallel refining motion to the refining element(s) for example through magnetic coupling forces. The refining apparatus can supply multiple different parallel refining motions to multiple different refining elements for example solely through magnetic coupling forces to improve refining quality and versatility. A refining chamber can be used. New methods of control are refining disclosed. The new refining methods, including magnetic refining methods, apparatus, and refining elements, including magnetically responsive refining elements, can help improve yield and lower the cost of manufacture for refining of workpieces having extremely close tolerances such as semiconductor wafers. New methods of control are also discussed. Methods and apparatus which use processor readable memory devices are discussed. Refining fluids are preferred. Reactive refining aids are preferred. Electro-refining for adding and removing material is disclosed. New methods and new apparatus for non-steady state refining control are disclosed.

CROSS REFERENCE TO RELATED APPLICATIONS

This application claims benefit of Provisional Application Ser. No.60/238,968 filed on Oct. 10, 2000 entitled “Magnetic finishing element”;Provisional Application Ser. No. 60/245,121 filed on Nov. 2, 2000entitled “New magnetic finishing element”, 60/386,567 filed on Jun. 6,2002 entitled “Magnetic refining”, 60/389,042 filed on Jun. 14, 2002entitled “Wafer refining”, 60/396,264 filed on Jul. 16, 2002 entitled“Versatile wafer refining”, and 60/496,148 filed with filing date Aug.18, 2003 entitled “Advanced wafer refining”. This application claimsbenefit of Regular patent applications with Ser. No. 09/974,129 filed onOct. 9, 2001 entitled “Magnetic refining apparatus”, Ser. No. 10/261,113filed on Sep. 30, 2002, and Ser. No. 10/218,740 filed on Aug. 14, 2002entitled “Versatile Wafer Refining”.

Provisional applications and Regular applications above are includedherein by reference in their entirety.

BACKGROUND OF INVENTION

Chemical mechanical polishing (CMP) is generally known in the art. Forexample U.S. Pat. No. 5,177,908 issued to Tuttle in 1993 describes afinishing element for semiconductor wafers, having a face shaped toprovide a constant, or nearly constant, surface contact rate to aworkpiece such as a semiconductor wafer in order to effect improvedplanarity of the workpiece. U.S. Pat. No. 5,234,867 to Schultz et al.issued in 1993 describes an apparatus for planarizing semiconductorwafers which in a preferred form includes a rotatable platen forpolishing a surface of the semiconductor wafer and a motor for rotatingthe platen and a non-circular pad is mounted atop the platen to engageand polish the surface of the semiconductor wafer. Fixed abrasivefinishing elements are known for polishing. Illustrative examplesinclude U.S. Pat. No. 4,966,245 to Callinan, U.S. Pat. No. 5,823,855 toRobinson, and WO 98/06541 to Rutherford.

An objective of polishing of semiconductor layers is to make thesemiconductor layers as nearly perfect as possible.

BRIEF SUMMARY OF INVENTION

Current finishing elements and equipment can suffer from being costly tomanufacture. Generally very complex mechanical equipment used whenfinishing semiconductor wafers. Complex, expensive, and bulky mechanicaldrives are generally used for generating polishing pad and waferpolishing motions. Also current finishing elements for semiconductorwafers generally have coextensive surface layers which can limit theirversatility in some demanding finishing applications. Current polishingpads are generally larger than the workpiece being finished whichconsumes precious floor space in a semiconductor fab. Still further,current finishing apparatus are not capable of supplying a parallelfinishing motion to finishing elements solely through magnetic couplingforces. Still further, current finishing apparatus are not capable ofsupplying multiple different parallel finishing motions to multiplefinishing elements solely through magnetic coupling forces. Stillfurther, current finishing apparatus are not capable of supplyingmultiple different parallel finishing motions to multiple differentfinishing elements solely through magnetic coupling forces. Stillfurther, current finishing apparatus are not capable of supplyingrefining motion(s) to refining element(s) solely through magneticcoupling forces wherein the refining element(s) inside an enclosedrefining chamber and the driving element is external to the enclosedrefining chamber. Still further, current finishing apparatus are notcapable of supplying a parallel finishing motion to refining elementssolely through magnetic coupling forces while electrodeposition and/orelectropolishing. Still further, a lack of the above characteristics ina finishing element reduces the versatility of the refining method(s)which can be employed for semiconductor wafer surface refining. Stillfurther, current finishing pads can be limited in the way they applypressure to the abrasives and in turn against the semiconductor wafersurface being finished. These unwanted effects are particularlyimportant and can be deleterious to yield and cost of manufacture whenmanufacturing electronic wafers which require extremely close tolerancesin required planarity and feature sizes.

It is an advantage to improve the finishing method for semiconductorwafer surfaces to make them as perfect as possible. It is an advantageto make refining elements and refining equipment with a lower cost ofmanufacture and reduce the mechanical complexity of the refiningequipment and thus also reduce the cost of refining a semiconductorwafer surface or workpiece surface. It is a preferred advantage todevelop refining apparatus and refining elements that can be smallerthan the workpiece being refined. It is further an advantage to developrefining apparatus that are capable of supplying a parallel refiningmotion to refining elements solely through magnetic coupling forces. Itis further a preferred advantage to develop current finishing apparatusthat are capable of supplying multiple different parallel refiningmotions to multiple different refining elements solely through magneticcoupling forces. It is further a preferred advantage to develop currentfinishing apparatus that are capable of supplying a plurality ofindependent parallel refining motions to multiple different refiningelements solely through magnetic coupling forces. It is further anadvantage to develop current refining apparatus that are capable ofsupplying multiple different parallel refining motions to multipledifferent, independently controlled refining elements solely throughmagnetic coupling forces. It is further an advantage to develop currentrefining apparatus that are capable of supplying multiple differentrefining energies, actions, and/or parallel motions to multipledifferent, independently controlled refining elements. It is further apreferred advantage to develop current refining apparatus, refiningelements, and refining capability that can add and remove material fromthe workpiece surface being refined. It is further a preferred advantageto develop current refining apparatus, refining elements, and refiningcapability that can add and remove material from the workpiece surfacebeing refined using similar and/or identical drive elements. It is anadvantage of the invention to develop a refining element which has aunique way of applying pressure to the unitary and/or a plurality ofdiscrete refining surface(s) and to the workpiece surface being refined.It is an advantage to develop a refining element which has a unique wayof applying refining energy or energies to the unitary and/or aplurality of discrete refining surface(s) and to the workpiece surfacebeing finished. It is further an advantage to help improve yield andlower the cost of manufacture for finishing of workpieces havingextremely close tolerances such as semiconductor wafers. It is furtheran advantage to help improve versatility and control which will in turnimprove yield, reduce consumable costs, and lower the cost ofmanufacture for refining of workpieces having extremely close tolerancessuch as semiconductor wafers. Preferred embodiments accomplish one ormore of the above advantages with a new structure and function in a newway to give the new and useful result.

A preferred embodiment is directed to a method for refining asemiconductor wafer having a semiconductor wafer surface comprising astep 1) providing at least two refining elements; a step 2) holding thesemiconductor wafer for refining; and a step 3) applying at least twoindependent operative refining motions to the at least two refiningelements and wherein the operative refining motions include at least oneelectrochemical action during at least a portion of a refining cycletime.

A preferred embodiment is directed to a method for refining asemiconductor wafer having a semiconductor wafer surface comprising astep 1) of providing at least two refining elements; a step 2) ofholding the semiconductor wafer for refining; and a step 3) of applyingat least two different operative refining motions to the at least tworefining elements and wherein the operative refining motions include atleast one electrochemical action during at least a portion of a refiningcycle time.

A preferred embodiment is directed to a method for refining asemiconductor wafer having a semiconductor wafer surface comprising astep 1) providing at least two refining elements; a step 2) holding thesemiconductor wafer for refining; and a step 3) applying at least twodifferent, independent operative refining motions to the at least tworefining elements and wherein the operative refining motions include atleast one electrochemical action during at least a portion of a refiningcycle time.

A preferred embodiment is directed to a method of removing unwantedmaterial from a semiconductor wafer having a tracking code and asemiconductor wafer surface comprising a step (A) providing a refiningelement having a refining surface and having a first operativeelectrode; a step (B) positioning the semiconductor wafer surface with aholder having an operative electrical contact forming a second operativeelectrode proximate to the refining element; a step (C) applying anoperative refining motion comprising a parallel operative refiningmotion in the interface between the semiconductor wafer surface beingrefined and the refining surface of the refining element; a step (D)applying an operative voltage across the first operative electrode andthe second operative electrode for electro-refining to remove theunwanted material on the semiconductor wafer surface during at least aportion of a refining cycle time; a step (E) sensing progressinformation of the refining of the semiconductor wafer surface with anoperative control subsystem having access to a process model andhistorical performance; a step (F) determining at least one improvedcontrol parameter using at least in part at least the process model, thetracking code, historical performance, and the progress information withthe operative control subsystem; and a step (G) controlling in real timethe at least one process control parameter to change the refining.

A preferred embodiment is directed to a method for refining comprising astep (A) applying a refining energy to a workpiece with a refiningelement; a step (B) providing an operative control subsystem having anoperative sensor, a controller, and a processor and wherein theprocessor has access to (i) a process model, (ii) an assigned workpiecetracking code, and (iii) information in at least one memory device; astep (C) sensing progress of refining information with the operativesensor during a period of non-steady refining; a step (D) determining achange for at least one improved control parameter using at least inpart at least (i) the process model, (ii) the assigned workpiecetracking code, (iii) the information in at least one memory device, and(iv) progress of refining information with the operative controlsubsystem during the period of non-steady refining; and a step (E)changing in real time the at least one process control parameter whichchanges the refining during the period of non-steady refining.

A preferred embodiment is directed to a method of refining of a firstsemiconductor wafer, a second semiconductor wafer, and a thirdsemiconductor wafer and wherein the first semiconductor wafer hastracking code “D”, the second semiconductor wafer has a tracking code“E”, and the third semiconductor wafer has a tracking code “F”, themethod of refining comprising a step (1) providing a refining elementhaving a tracking code “RE”; a step (2) providing an operative controlsubsystem having a processor and at least one operative sensor forsensing real time progress information; a step (3) applying a refiningenergy to the surface of a first semiconductor wafer having at least onecontrol parameter; a step (4) sensing progress information “G” with theat least one operative sensor in real time; a step (5) determining inreal time at least one improved control parameter “A” using (i) thetracking code “D”, (ii) the tracking code “RE”, and (iii) the progressinformation “G” for the first semiconductor wafer with the operativecontrol subsystem; a step (6) controlling in real time the at least oneprocess control parameter “A” to change the refining for the firstsemiconductor wafer; a step (7) storing for future availability storedinformation related to (i) the at least one control parameter “A”, (ii)progress information “G”, (iii) the tracking code “RE”, and (iv) thetracking code “D”; a step (8) applying the refining energy to thesurface of a second semiconductor wafer having at least one controlparameter “B”; a step (9) sensing progress information “H” with the atleast one operative sensor in real time; a step (10) determining in realtime at least one improved control parameter “B” for the secondsemiconductor wafer surface using at least a portion of the storedinformation related to (i) the at least one control parameter “A”, (ii)the progress information “G”, (iii) the progress information “H”, (iv)the tracking code “RE”, and (v) the tracking code “D” (vi) the trackingcode “E” for the second semiconductor wafer with the operative controlsubsystem; a step (11) controlling in real time the at least one processcontrol parameter “B” for the second semiconductor wafer surface tochange the removal of material from the refining for the secondsemiconductor wafer; a step (12) storing for future availability storedinformation related to (i) the at least one control parameter “A”, (ii)the at least one control parameter “B”, (iii) the progress information“G”, (iv) the progress information “H”, (v) the tracking code “RE”, (vi)the tracking code “D”, and (vii) the tracking code “E”; a step (13)applying the refining energy to the surface of a third semiconductorwafer having at least one control parameter “C”; a step (14) sensingprogress information “I” with the at least one operative sensor in realtime; a step (15) determining in real time at least one improved controlparameter “C” for the third semiconductor wafer surface using at least aportion of the stored information related to (i) the at least onecontrol parameter “A”, (ii) the at least one control parameter “B”,(iii) the at least one control parameter “C”, (iv) the tracking code“D”, (v) the tracking code “E”, (vi) the tracking code “F”, (vii) thetracking code “RE”, (viii) the real time progress information “G”, (ix)the real time progress information “H”, (x) the progress information “I”for the third semiconductor wafer with the operative control subsystem;and a step (16) controlling in real time the at least one processcontrol parameter “C” for the third semiconductor wafer surface tochange the refining for the third semiconductor wafer.

A preferred embodiment is directed to a method of refining of a firstand a second layer on a semiconductor wafer, each having an effect onthe cost of manufacture, the method comprising a step (1) applying afirst refining energy to the first layer of the semiconductor wafer; astep (2) sensing a real time process information for the first layer ofthe semiconductor wafer with at least one operative sensor; a step (3)determining in real time at least one improved first layer controlparameter “A” using a first tracking code and a real time progressinformation for the semiconductor wafer with an operative controlsubsystem having the at least one operative sensor; a step (4)controlling in real time the at least one first layer process controlparameter “A” to change the semiconductor wafer surface during therefining of the first layer of the semiconductor wafer; a step (5)storing for future availability stored information related to the atleast one first layer process control parameter “A”, the first trackingcode, and the real time progress information for the first layerrefining; a step (6) applying a second refining energy to the secondlayer of the semiconductor wafer having at least one second layercontrol parameter “B”; a step (7) sensing a real time processinformation for the second layer of the semiconductor wafer with the atleast one operative sensor; a step (8) determining in real time at leastone improved second layer control parameter “B” using at least a portionof the stored information related to the tracking code, the first layerprogress information, and the second layer progress information of thesemiconductor wafer with the operative control subsystem; and a step (9)controlling in real time the at least one second layer process controlparameter “B” to change the semiconductor wafer surface during therefining of the second layer of the semiconductor wafer.

A preferred embodiment is directed to a magnetic refining elementcomprising at least one magnetically responsive refining member havingat least one electrode; at least one refining surface; and wherein themagnetic refining element has an identification code.

A preferred embodiment is directed to an apparatus for refining aworkpiece surface comprising at least one magnetically responsiverefining element free of any nonmagnetic driving mechanism; at least onemagnetic driving element; and a holder for a workpiece which exposes theworkpiece surface for refining.

A preferred embodiment is directed to an apparatus comprising at leastone magnetically responsive refining element having a tracking code; arefining element placement arm having a electromagnet for lifting,placing, and releasing the magnetically responsive refining element; andan operative sensor to sense the tracking code; and an operativecontroller to control the refining element placement arm for lifting,placing, and releasing the magnetically responsive refining element.

A preferred embodiment is directed to an apparatus for refining aworkpiece surface comprising at least two refining elements having atleast two different identification codes; at least two drivingmechanisms for at least two refining motions for the at least tworefining elements during at least a portion of the refining cycle time;a holder for a workpiece which exposes the workpiece surface forrefining; and an operative control subsystem having an operative sensor,a controller, and a processor and wherein the processor has access tothe at least two different refining element identification codes andwherein the processor has access to a processor readable media havingprocessing instructions to use the at least two different refiningelement identification codes to determine a change for at least onecontrol parameter during a refining cycle time.

Other preferred embodiments of my invention are described herein.

These and other advantages of the invention will become readily apparentto those of ordinary skill in the art after reading the followingdisclosure of the invention.

BRIEF DESCRIPTION OF SEVERAL VIEWS OF THE DRAWINGS

FIG. 1 a is an artist's drawing of the interrelationships when finishingaccording to one embodiment of this invention.

FIG. 1 b is an artist's drawing of the interrelationships when finishingaccording to one embodiment of this invention.

FIG. 1 c is an artist's drawing of the interrelationships when finishingaccording to one embodiment of this invention.

FIG. 2 is an artist's drawing of the interrelationships when finishingaccording to another embodiment of this invention

FIG. 3 is an artist's drawing of a particularly preferred embodiment ofthis invention including the interrelationships of the different objectswhen finishing according to an embodiment this invention.

FIG. 4 is an artist's drawing of a particularly preferred embodiment ofthis invention including the interrelationships of the different objectswhen finishing according to an embodiment of this invention.

FIG. 5 is a closeup drawing of a preferred embodiment

FIGS. 6 and 6 b are closeup drawings of preferred embodiments

FIGS. 7 a, 7 b, and 7 c are cross-sectional views of a magneticfinishing element

FIGS. 8 a and 8 b are cross-sectional views of alternate preferredembodiments of a magnetic finishing element

FIGS. 9 a, 9 b, and 9 c are cross-sectional views of further alternatepreferred embodiments of a magnetic finishing element

FIGS. 10 a and 10 b are cross-sectional views of a discrete finishingmember

FIG. 11 is an artist's view a preferred arrangement of the discretefinishing members in the finishing element

FIGS. 12 a & b is an artist's representation of local high finishingrate regions and some local low finishing rate regions

FIG. 12 c, d, & e is an artist's representation of preferred method ofelectro-refining

FIG. 13 is a plot of cost of ownership vs defect density

FIG. 14 is a plot of cost of ownership vs equipment yield

FIG. 15 is a plot of cost of ownership vs parametric yield loss

FIG. 16 is a plot of finishing rate effect on cost of ownership

FIGS. 17-31 comprise some preferred methods

REFERENCE NUMERALS IN DRAWINGS

-   Reference Numeral 20 finishing composition feed line for adding    finishing chemicals-   Reference Numeral 22 reservoir of finishing composition-   Reference Numeral 24 alternate finishing composition feed line for    adding alternate finishing chemicals-   Reference Numeral 26 a reservoir of alternate finishing composition-   Reference Numeral 30 a refining chamber-   Reference Numeral 32 a second inlet for reactive refining    composition-   Reference Numeral 34 represents a second gaseous refining    composition-   Reference Numeral 33 an optionally gaseous refining composition    control subsystem-   Reference Numeral 36 an optional activating chamber for a first    gaseous refining composition-   Reference Numeral 38 a first inlet for a gaseous refining    composition-   Reference Numeral 40 a first gaseous refining composition-   Reference Numeral 41 an optional outlet operative sensor-   Reference Numeral 42 an outlet for the material removed from the    refining chamber-   Reference Numeral 44 material removed from the refining chamber-   Reference Numeral 110 workpiece-   Reference Numeral 112 workpiece surface facing away from the    workpiece surface being finished.-   Reference Numeral 114 surface of the workpiece being finished-   Reference Numeral 120 magnetically responsive refining element-   Reference Numeral 130 unitary resilient body of an organic polymer-   Reference Numeral 140 discrete finishing member-   Reference Numeral 142 discrete finishing member finishing surface-   Reference Numeral 143 backside surface of discrete finishing member-   Reference Numeral 144 abrasive particles-   Reference Numeral 146 optional discrete synthetic resin particles-   Reference Numeral 148 discrete finishing member body-   Reference Numeral 150 finishing element subsurface layer-   Reference Numeral 152 optional finishing aids in discrete finishing    member-   Reference Numeral 160 magnetic material-   Reference Numeral 165 protective covering for magnetic material-   Reference Numeral 170 coating-   Reference Numeral 171 a small region of a magnetic composite member    before magnification-   Reference Numeral 172 magnetic material such as magnetic particles-   Reference Numeral 173 magnified view of one embodiment of a magnetic    composite member-   Reference Numeral 175 magnetic composite member-   Reference Numeral 184 shortest distance across the discrete member    body-   Reference Numeral 184 thickness of the discrete finishing member    body-   Reference Numeral 200 finishing composition-   Reference Numeral 210 resultant movement of the magnetic finishing    element due to the driving movement of the driving magnet-   Reference Numeral 215 driving movement of the driving magnet member-   Reference Numeral 220 pressure in the interface between the magnetic    finishing element and the semiconductor wafer surface being finished-   Reference Numeral 225 movement which changes the perpendicular    distance between the magnetic finishing element and the magnetic    driving element-   Reference Numeral 300 workpiece holder-   Reference Numeral 305 adjustable retainer ring-   Reference Numeral 307 preferred adjustable retainer ring mechanism-   Reference Numeral 310 driving magnet body-   Reference Numeral 315 driving magnet assembly-   Reference Numeral 320 driving magnet(s)-   Reference Numeral 330 operative drive assembly between the driver    for the driving magnet assembly and the driving magnet assembly-   Reference Numeral 340 driver for the driving magnet assembly-   Reference Numeral 400 open spaces between discrete finishing members-   Reference Numeral 410 optional third layer member-   Reference Numeral 420 unitary resilient body proximal to the    finishing member finishing surface-   Reference Numeral 422 recess for discrete finishing member-   Reference Numeral 430 discrete third layer members-   Reference Numeral 432 recess for discrete third layer member-   Reference Numeral 434 portion of discrete finishing member spaced    apart from unitary resilient body-   Reference Numeral 435 cavity between discrete finishing member    spaced apart from unitary resilient body-   Reference Numeral 436 portion of discrete finishing member attached    to the unitary resilient body-   Reference Numeral 440 cavity between discrete finishing member    spaced apart from unitary resilient body-   Reference Numeral 450 potential motion of discrete finishing member    in FIG. 7 a-   Reference Numeral 460 potential motion of discrete finishing member    in FIG. 7 b-   Reference Numeral 470 potential motion of discrete finishing member    in FIG. 7 c-   Reference Numeral 480 potential motion of discrete finishing member    in FIG. 8 a-   Reference Numeral 485 potential motion of discrete finishing member    in FIG. 8 b-   Reference Numeral 490 potential motion of discrete finishing member    in FIG. 9 a-   Reference Numeral 495 potential motion of discrete finishing member    in FIG. 9 b-   Reference Numeral 498 potential motion of discrete finishing member    in FIG. 9 c-   Reference Numeral 500 discrete regions of material having dispersed    therein abrasives-   Reference Numeral 502 expanded view of discrete regions of material    having dispersed therein abrasives-   Reference Numeral 510 abrasive particles-   Reference Numeral 550 optional discrete finishing aids-   Reference Numeral 555 optional soft organic synthetic resin and/or    modifier materials-   Reference Numeral 600 magnified small region in a discrete finishing    member body-   Reference Numeral 601 small region in a discrete member finishing    body in FIG. 10 aa which is magnified in FIG. 10 bb-   Reference Numeral 602 abrasive particles-   Reference Numeral 660 electro-refining element-   Reference Numeral 662 first electrode-   Reference Numeral 664 operative electrical connection to first    electrode-   Reference Numeral 666 electro-refining surface-   Reference Numeral 668 feed for electro-refining composition-   Reference Numeral 670 electrical contact to workpiece surface for    electro-refining-   Reference Numeral 672 operative electrical connection the electrical    contact to workpiece surface for electro-refining-   Reference Numeral 680 connecting material-   Reference Numeral 681 operative refining pressure-   Reference Numeral 682 discrete refining member-   Reference Numeral 684 connecting material proximate the surface of a    discrete refining member-   Reference Numeral 686 operative electrode-   Reference Numeral 688 operative electrical connection-   Reference Numeral 689 first type of magnetically responsive material-   Reference Numeral 690 second type of magnetically responsive    material-   Reference Numeral 692 recesses in connecting material-   Reference Numeral 700 optional footer having chamfers and protrusion    extending into unitary resilient body-   Reference Numeral 702 another optional footer shape having chamfers    and protrusion extending into unitary resilient body-   Reference Numeral 710 optional chamfer proximate discrete finishing    member finishing surface-   Reference Numeral 712 optional chamfer on the discrete finishing    member surface-   Reference Numeral 750 layer covering magnetic composite member-   Reference Numeral 755 finishing element finishing surface-   Reference Numeral 760 optional channel-   Reference Numeral 770 connecting member-   Reference Numeral 800 semiconductor wafer surface being finished-   Reference Numeral 802 high region on semiconductor wafer surface-   Reference Numeral 804 lower region proximate the high region on the    semiconductor wafer surface-   Reference Numeral 810 first magnetic driver-   Reference Numeral 811 second magnetic driver-   Reference Numeral 812 discrete finishing member surface displaced    from but proximate to the high local regions-   Reference Numeral 3000 operative workpiece sensor-   Reference Numeral 3005 optical waves such as laser beams for    operative workpiece sensor-   Reference Numeral 3010 operative connection between workpiece sensor    and workpiece controller-   Reference Numeral 3015 workpiece sensor controller-   Reference Numeral 3020 operative connection between workpiece    controller and processor-   Reference Numeral 3030 operative magnetic finishing element sensor-   Reference Numeral 3035 optical waves such as laser beams for the    operative magnetic finishing element sensor-   Reference Numeral 3040 operative connection between operative    magnetic finishing element sensor and operative finishing element    sensor controller-   Reference Numeral 3045 operative magnetic finishing element sensor    controller-   Reference Numeral 3050 operative connection between operative    magnetic finishing element sensor controller and processor-   Reference Numeral 3100 operative magnetic driver sensor-   Reference Numeral 3105 operative connection between operative    magnetic driver sensor and magnetic driver-   Reference Numeral 3110 operative connection between operative    magnetic driver sensor and magnetic driver-   Reference Numeral 3115 operative connection between operative    magnetic driver sensor and processor-   Reference Numeral 3200 operative sensor-   Reference Numeral 3210 processor-   Reference Numeral 3220 controller-   Reference Numeral 3230 operative connections.-   Reference Numeral 6000 electric current barrier film-   Reference Numeral 6002 unwanted high region-   Reference Numeral 6004 lower region than unwanted high region-   Reference Numeral 6010 surface of refining element-   Reference Numeral 6040 thinner region of electric current barrier    film-   Reference Numeral 6042 thicker region of electric current barrier    film-   Reference Numeral 6050 operative connection for electrode-   Reference Numeral 6070 operative sensor-   Reference Numeral 6072 optical beams-   Reference Numeral 7000 refining element robot

DETAILED DESCRIPTION OF THE INVENTION

The book Chemical Mechanical Planarization of Microelectric Materials bySteigerwald, J. M. et al published by John Wiley & Sons, ISBN 0471138274generally describes chemical mechanical finishing and is included hereinby reference in its entirety for general background. In chemicalmechanical finishing the workpiece is generally separated from thefinishing element by a polishing slurry. The workpiece surface beingfinished is in parallel motion with finishing element finishing surfacedisposed towards the workpiece surface being finished. The abrasiveparticles such as found in a polishing slurry interposed between thesesurfaces is used to finish the workpiece is in the background arts.

Discussion of some of the terms useful to aid in understanding thisinvention are now presented. Finishing is a term used herein for bothplanarizing and polishing. Planarizing is the process of making asurface which has raised surface perturbations or cupped lower areasinto a planar surface and thus involves reducing or eliminating theraised surface perturbations and cupped lower areas. Planarizing changesthe topography of the work piece from non planar to ideally perfectlyplanar. Polishing is the process of smoothing or polishing the surfaceof an object and tends to follow the topography of the workpiece surfacebeing polished. A finishing element is a term used herein to describe apad or element for both polishing and planarizing. A finishing elementfinishing surface is a term used herein for a finishing element surfaceused for both polishing and planarizing. A finishing element planarizingsurface is a term used herein for a finishing element surface used forplanarizing. A finishing element polishing surface is a term used hereinfor a finishing element surface used for polishing. Workpiece surfacebeing finished is a term used herein for a workpiece surface undergoingeither or both polishing and planarizing. A workpiece surface beingplanarized is a workpiece surface undergoing planarizing. A workpiecesurface being polished is a workpiece surface undergoing polishing. Thefinishing cycle time is the elapsed time in minutes that the workpieceis being finished. The planarizing cycle time is the elapsed time inminutes that the workpiece is being planarized. The polishing cycle timeis the elapsed time in minutes that the workpiece is being polishing.

As used herein, a refining surface comprises a surface for refining aworkpiece surface using an operative motion selected from a motionconsisting of a planarizing operative motion, a polishing operativemotion, a buffing operative motion, and a cleaning operative motion orcombination thereof.

As used herein, die is one unit on a semiconductor wafer generallyseparated by scribe lines. After the semiconductor wafer fabricationsteps are completed, the die are separated into units generally bysawing. The separated units are generally referred to as “chips”. Eachsemiconductor wafer generally has many die which are generallyrectangular. The terminology semiconductor wafer and die are generallyknown to those skilled in the arts. As used herein, within dieuniformity refers to the uniformity of within the die. As used herein,local planarity refers to die planarity unless specifically definedotherwise. Within wafer uniformity refers to the uniformity of finishingof the wafer. As used herein, wafer planarity refers to planarity acrossa wafer. Multiple die planarity is the planarity across a defined numberof die. As used herein, global wafer planarity refers to planarityacross the entire semiconductor wafer planarity. Planarity is criticalfor the photolithography step generally common to semiconductor waferprocessing, particularly where feature sizes are less than 0.25 microns.As used herein, a device is a discrete circuit such as a transistor,resistor, or capacitor. As used herein, pattern density is ratio of theraised (up) area to the to area of region on a specific region such as adie or semiconductor wafer. As used herein, pattern density is ratio ofthe raised (up) area to the total area of region on a specific regionsuch as a die or semiconductor wafer. As used herein, line patterndensity is the ratio of the line width to the pitch. As used herein,pitch is line width plus the oxide space. As an illustrative example,pitch is the copper line width plus the oxide spacing. Oxide patterndensity, as used herein, is the volume fraction of the oxide within aninfinitesimally thin surface of the die.

As used herein, the term “polymer” refers to a polymeric compoundprepared by polymerizing monomers whether the same or of a differenttype. The “polymer” includes the term homopolymer, usually used to referto polymers prepared from the same type of monomer, and the terminterpolymer as defined below. Polymers having a number averagemolecular weight of greater than 5,000 are preferred and polymers havinga number average molecular weight of at least 20,000 are more preferredand polymers having a number average molecular weight of at least 50,000are even more preferred. Polymers generally having a preferred numberaverage molecular weight of at most 1,000,000 are preferred. Those skillin the polymer arts generally are familiar with number average molecularweights. U.S. Pat. No. 5,795,941 issue to DOW Chemical is included byreference in its entirety for general guidance and appropriatemodification by those skilled on number average molecular weightdetermination.

As used herein, the term “interpolymer” refers to polymers prepared bypolymerization of at least two different types of monomers.

As used herein, an appreciable amount is term which means “capable ofbeing readily perceived or estimated”. A change in the cost ofmanufacture by an appreciable amount is a preferred nonlimiting example.A change in the refining rate and/or quality by an appreciable amount isa preferred nonlimiting example.

FIG. 1 a is an artist's drawing of a particularly preferred embodimentof this invention when looking at a cross-section including theinterrelationships of some preferred objects when finishing according tothe method of this invention. Reference Numeral 120 represents amagnetically responsive refining element. A magnetic finishing elementcomprises an illustrative preferred magnetically responsive refiningelement. The magnetic finishing element has a finishing surface. Anabrasive refining surface is preferred. An abrasive finishing surface ismore preferred. An abrasive finishing surface can comprise inorganicabrasive particles for some applications. An abrasive finishing orrefining surface can comprise organic abrasive particles for someapplications. An abrasive refining or finishing surface can be free ofinorganic abrasive particles for some applications. An abrasive refiningor finishing surface can be free of organic abrasive particles for someapplications. The abrasive refining or finishing surface can comprise anabrasive polymer. Generally, a finishing surface having abrasiveparticles therein is a more aggressive finishing surface and can bepreferred for some applications, particularly where higher cutting ratesare preferred. Generally, a finishing surface free of abrasive particlestherein can be preferred for finishing such as wherein an abrasiveslurry is used. A finishing element finishing surface, preferably anabrasive finishing element finishing surface, free of fluorocarbonmatter can be preferred for some types of finishing because thefluorocarbon matter can be difficult to clean from some workpiecesurfaces after finishing, particularly with aqueous cleaningcompositions. The finishing element finishing surface faces theworkpiece surface being finished. An abrasive finishing elementfinishing surface is preferred. A finishing surface having an abrasivepolymer is preferred and having an abrasive organic polymer is morepreferred. A magnetically responsive finishing element free of amechanical driving mechanism is preferred.

Reference Numeral 130 represents a preferred optional unitary resilientbody of the finishing element. Reference Numeral 140 represents adiscrete finishing member. Reference Numeral 160 represents a materialcapable of magnetic attraction. A ferromagnetic material is a preferredmaterial capable of magnetic attraction. A paramagnetic material is apreferred material capable of magnetic attraction. In other words,Reference Numeral 160 represents a magnetically responsive member or amember capable of magnetic coupling. A permanent magnet is a preferredmagnetic material. Reference Numeral 165 represents a preferred coveringlayer on the material capable of magnetic attraction. The preferredcovering layer can reduce or eliminate chemical degradation to thematerial capable of magnetic attraction such as iron. A preferrednonlimiting example of a covering layer is a polymeric layer. A discretefinishing member may be referred to herein as a discrete finishingelement. The discrete finishing members are preferably attached, morepreferably fixedly attached, to the optionally preferred unitaryresilient body of the finishing element. An abrasive finishing surfacecan be preferred for abrasive two body finishing. The abrasive surfacecan have metal oxide particles. The abrasive surface can comprise apolymeric abrasive surface. The abrasive surface can comprise abrasivepolymeric particles. The discrete finishing members can have an abrasivesurface such as created by metal oxide particles. In another embodimentthe discrete finishing members are free of abrasive particles. ReferenceNumeral 300 represents a holder for the workpiece surface beingfinished. A holder for the workpiece can be oriented substantiallyhorizontal, more preferably oriented horizontal (parallel with theground) is preferred. A holder for the workpiece can be orientedsubstantially vertical, more preferably oriented vertical (perpendicularwith the ground) is also preferred. For some apparatus designs, avertical orientation can have a smaller footprint and thus a generallylower some of overhead cost to semiconductor wafer manufacturer.Further, for some finishing, removal of unwanted spent finishingcompositions for the workpiece surface can be effected with gravityand/or gravity assistance. Reference Numeral 305 represents anoptionally preferred adjustable retainer ring, more preferably a heightadjustable retainer ring. Adjustable retainer rings and mechanisms aregenerally known in background art commercial polishing equipment and canbe generally modified by those skilled in the art given the teachingsand guidance herein. Pneumatic adjustable retainer rings are onepreferred kind. Magnetically adjustable retainer rings are anotherpreferred kind. Mechanically adjustable retainer rings are still anotherpreferred kind. Reference Numeral 307 represents an adjustable retainerring adjustment means. U.S. Pat. No. 6,059,638 gives guidance on someknown adjustable retainer mechanism and is included in its entirety forguidance and modification by those skilled in the arts. The retainerring facilitates holding the workpiece during finishing. An adjustableretainer ring can be used to finishing uniformity at the edge of theworkpiece and a height adjustable retainer ring can be used to finishinguniformity at the edge of the workpiece is more preferred. ReferenceNumeral 315 represents a driving magnet assembly. Reference Numeral 310represents the driving magnet body. Reference Numeral 320 represents thedriving magnets. Reference Numeral 330 represents the operative driveassembly between the driver for the driving magnet assembly and thedriving magnet assembly. Reference Numeral 340 represents the driver forthe driving magnet assembly. Permanent magnets are a preferred drivingmagnet. Electromagnets are a preferred driving magnet. Reference Numeral215 represents a driving movement of the driving magnet member.Reference Numeral 210 represents a resultant movement of the magneticfinishing element due to the driving movement of the driving magnet(Reference Numeral 215). Reference Numeral 210 represents an operativefinishing motion. An operative finishing motion in the interface betweenthe workpiece surface being finished and magnetic finishing elementfinishing surface. A magnetic operative finishing motion in theinterface between the workpiece surface being finished and magneticfinishing element finishing surface, as used herein, is the operativefinishing motion generated through the coupling the driver magnet(s) andthe magnetic finishing element. An operative finishing interface, asused herein, is the interface between the workpiece surface beingfinished and magnetic finishing element finishing surface. A coefficientof friction in the operative finishing interface of at most 0.5 ispreferred and of at most 0.4 is more preferred and of at most 0.3 iseven more preferred and of at most 0.2 is even more particularlypreferred. Reference Numeral 225 represents optionally preferredmovement which changes the perpendicular distance between the magneticfinishing element and the magnetic driving element. Changing theperpendicular distance between the magnetic finishing element and themagnetic driving element is a preferred way to change the finishingpressure in the interface between the magnetic finishing element and thesemiconductor wafer surface being finished (Reference Numeral 220).Reference Numeral 220 represents the operative finishing pressure in theoperative finishing interface. The magnetic operative finishing pressureis the pressure generated in the interface between the magneticfinishing element finishing surface and the workpiece surface beingfinished by the magnetic coupling between driver magnet(s) and magneticfinishing element. Another preferred method to change the magneticcoupling force between the finishing element and the driving magnetassembly is to use controllable electromagnets. The workpiece surfacefacing the finishing element finishing surface is the workpiece surfacebeing finished. Reference Numeral 110 represents the workpiece.Reference Numeral 200 represents a finishing composition and optionally,the alternate finishing composition disposed between the workpiecesurface being finished and finishing element finishing surface. Theinterface between the workpiece surface being finished and the finishingelement finishing surface is often referred to herein as the operativefinishing interface. A finishing composition comprising a water basedcomposition is preferred. A finishing composition comprising a waterbased composition which is substantially free of abrasive particles ispreferred. The workpiece surface being finished is in operativefinishing motion relative to the finishing element finishing surface.The workpiece surface being finished is in operative refining motion,more preferably operative finishing motion, relative to the refiningelement refining surface. The workpiece surface being finished inoperative finishing motion relative to the finishing element finishingsurface is an example of a preferred operative finishing motion. Theworkpiece surface being refined in operative refining motion relative tothe finishing element finishing surface is an example of a preferredoperative refining motion. Reference Numeral 210 represents a preferredoperative refining motion, more preferably an operative finishingmotion, between the surface of the workpiece being finished and refiningsurface.

FIG. 1 b is an artist's drawing of a particularly preferred embodimentof this invention when looking at a cross-section including theinterrelationships of some preferred objects when finishing according tothe method of this invention. Reference Numeral 30 represents a refiningchamber, preferably a sealed refining chamber, for finishing orrefining. Reference Numeral 32 represents a second inlet for a refiningcomposition, preferably a reactive refining composition. ReferenceNumeral 34 represents a second gaseous refining composition. ReferenceNumeral 33 represents an optionally preferred operative gaseous refiningcomposition control subsystem having an operative sensor, processor, andcontroller. Reference Numeral 36 represents an optional activatingchamber for a first gaseous refining composition as illustrated by areactive gas such as an ultraviolet light source to activate ozone.Reference Numeral 38 represents a first inlet for a refiningcomposition, preferably a gaseous refining composition, as illustratedby a reactive gas such as an ultraviolet light source to activate ozone.Reference Numeral 40 represents a first gaseous refining composition.Reference Numeral 42 represents an outlet for the material removed fromthe refining chamber. Reference Numeral 41 represents an optional outletoperative sensor to sense flow rates, chemical analysis, or pressures ofthe material removed from the refining chamber to enhance processcontrol. Reference Numeral 44 represents the material removed from therefining chamber. The locations of the inlets and outlets can be changedto different locations to better enhance reactivity, mixing, and/orremove of the spent material. Reference Numeral 120 represents themagnetically responsive refining element. A magnetic refining element isa preferred example of a magnetically responsive refining element. Amagnetic finishing element is a preferred example of a magneticallyresponsive refining element used in this figure. The magnetic finishingelement has a finishing surface. An abrasive finishing surface ispreferred. An abrasive finishing surface can comprise inorganic abrasiveparticles for some applications. An abrasive finishing surface cancomprise organic abrasive particles for some applications. An abrasivefinishing surface can be free of inorganic abrasive particles for someapplications. An abrasive finishing surface can be free of organicabrasive particles for some applications. The abrasive finishing surfacecan comprise an abrasive polymer. Generally, a finishing surface havingabrasive particles therein is a more aggressive finishing surface andcan be preferred for some applications, particularly where highercutting rates are preferred. Generally, a finishing surface free ofabrasive particles therein can be preferred for finishing such aswherein an abrasive slurry is used. The finishing element finishingsurface faces the workpiece surface being finished. An abrasivefinishing element finishing surface is preferred. A finishing surfacehaving an abrasive polymer is preferred and having an abrasive organicpolymer is more preferred. A magnetically responsive finishing elementfree of a mechanical driving mechanism is preferred. Reference Numeral130 represents a preferred optional unitary resilient body of thefinishing element. Reference Numeral 140 represents a discrete finishingmember. Reference Numeral 160 represents a material capable of magneticattraction. A ferromagnetic material is a preferred material capable ofmagnetic attraction. A paramagnetic material is a preferred materialcapable of magnetic attraction. In other words, Reference Numeral 160represents a magnetically responsive member or a member capable ofmagnetic coupling. A permanent magnet is a preferred magnetic material.Reference Numeral 165 represents a preferred covering layer on thematerial capable of magnetic attraction. The preferred covering layercan reduce or eliminate chemical degradation to the material capable ofmagnetic attraction such as iron. A preferred nonlimiting example of acovering layer is a polymeric layer. A discrete finishing member may bereferred to herein as a discrete finishing element. The discretefinishing members are preferably attached, more preferably fixedlyattached, to the optionally preferred unitary resilient body of thefinishing element. An abrasive finishing surface can be preferred forabrasive two body finishing. The abrasive surface can have metal oxideparticles. The abrasive surface can comprise a polymeric abrasivesurface. The abrasive surface can comprise abrasive polymeric particles.The discrete finishing members can have an abrasive surface such ascreated by metal oxide particles. In another embodiment the discretefinishing members are free of abrasive particles. Reference Numeral 300represents a holder for the workpiece surface being finished. A holderfor the workpiece can be oriented substantially horizontal, morepreferably oriented horizontal (parallel with the ground) is preferred.A holder for the workpiece can be oriented substantially vertical, morepreferably oriented vertical (perpendicular with the ground) is alsopreferred. For some apparatus designs, a vertical orientation can have asmaller footprint and thus a generally lower some of overhead cost tosemiconductor wafer manufacturer. Further, for some finishing, removalof unwanted spent finishing compositions for the workpiece surface canbe effected with gravity and/or gravity assistance. Reference Numeral305 represents an optionally preferred adjustable retainer ring, morepreferably a height adjustable retainer ring. Adjustable retainer ringsand mechanisms are generally known in background art commercialpolishing equipment and can be generally modified by those skilled inthe art given the teachings and guidance herein. Pneumatic adjustableretainer rings are one preferred kind. Magnetically adjustable retainerrings are another preferred kind. Mechanically adjustable retainer ringsare still another preferred kind. Reference Numeral 307 represents anadjustable retainer ring adjustment means. U.S. Pat. No. 6,059,638 givesguidance on some known adjustable retainer mechanism and is included inits entirety for guidance and modification by those skilled in the arts.The retainer ring facilitates holding the workpiece during finishing. Anadjustable retainer ring can be used to finishing uniformity at the edgeof the workpiece and a height adjustable retainer ring can be used tofinishing uniformity at the edge of the workpiece is more preferred.Reference Numeral 315 represents a driving magnet assembly. ReferenceNumeral 310 represents the driving magnet body. Reference Numeral 320represents the driving magnets. Reference Numeral 330 represents theoperative drive assembly between the driver for the driving magnetassembly and the driving magnet assembly. Reference Numeral 340represents the driver for the driving magnet assembly. Permanent magnetsare a preferred driving magnet. Electromagnets are a preferred drivingmagnet. Reference Numeral 215 represents a driving movement of thedriving magnet member. Reference Numeral 210 represents a resultantmovement of the magnetic finishing element due to the driving movementof the driving magnet (Reference Numeral 215). Reference Numeral 210represents an operative finishing motion. An operative finishing motionin the interface between the workpiece surface being finished andmagnetic finishing element finishing surface. Refining wherein thesemiconductor wafer surface and the magnetically responsive refiningelements are in an enclosed chamber and the magnetic driving mechanismis outside the enclosed chamber is preferred. Refining wherein thesemiconductor wafer surface and the magnetically responsive refiningelements are in an enclosed chamber and the magnetic driving mechanismis totally outside the enclosed chamber is more preferred. Refiningwherein the semiconductor wafer surface and the magnetically responsiverefining elements are in an enclosed chamber and the driving magnet(s)is outside the enclosed chamber is preferred. Refining wherein thesemiconductor wafer surface and the magnetically responsive refiningelements are in an enclosed chamber and the driving magnet(s) is totallyoutside the enclosed chamber is more preferred. A magnetic operativefinishing motion in the interface between the workpiece surface beingfinished and magnetic finishing element finishing surface, as usedherein, is the operative finishing motion generated through the couplingthe driver magnet(s) and the magnetic finishing element. An operativefinishing interface, as used herein, is the interface between theworkpiece surface being finished and magnetic finishing elementfinishing surface. A coefficient of friction in the operative refiningor finishing interface of at most 0.5 is preferred and of at most 0.4 ismore preferred and of at most 0.3 is even more preferred and of at most0.2 is even more particularly preferred. Reference Numeral 225represents optionally preferred movement which changes the perpendiculardistance between the magnetic finishing element and the magnetic drivingelement. Changing the perpendicular distance between the magneticfinishing element and the magnetic driving element is a preferred way tochange the finishing pressure in the interface between the magneticfinishing element and the semiconductor wafer surface being finished(Reference Numeral 220). Reference Numeral 220 represents the operativefinishing pressure in the operative finishing interface. The magneticoperative finishing pressure is the pressure generated in the interfacebetween the magnetic finishing element finishing surface and theworkpiece surface being finished by the magnetic coupling between drivermagnet(s) and magnetic finishing element. Another preferred method tochange the magnetic coupling force between the finishing element and thedriving magnet assembly is to use controllable electromagnets. Theworkpiece surface facing the finishing element finishing surface is theworkpiece surface being finished. Reference Numeral 110 represents theworkpiece. The interface between the workpiece surface being finishedand the finishing element finishing surface is often referred to hereinas the operative finishing interface. A refining chamber having arefining fluid is preferred. A reactive liquid composition can be apreferred refining fluid. A reactive gas can be a preferred refiningfluid. A reactive gas having a refining aid comprising a halogenatedmaterial is preferred. A halocompound represents a preferred halogenatedmaterial. A reactive gas which has been activated with a plasma ispreferred. A refining chamber free of a supplied liquid (such as water)is preferred for some refining applications. The workpiece surface beingfinished is in operative finishing motion relative to the finishingelement finishing surface. The workpiece surface being finished inoperative finishing motion relative to the finishing element finishingsurface is an example of a preferred operative finishing motion.Reference Numeral 210 represents a preferred operative finishing motionbetween the surface of the workpiece being finished and finishingelement finishing surface. Refining the semiconductor wafer surfacewherein the semiconductor wafer surface and the magnetically responsiverefining element in an enclosed chamber is preferred. Refining thesemiconductor wafer surface the semiconductor wafer surface and themagnetically responsive refining element is in a sealed enclosed chamberis more preferred. By refining in an enclosed chamber, the use ofgaseous oxidizing agents can be controlled safely in an environmentallyfriendly manner. Generally a gaseous chamber pressure of between 0.5 and1.5 atmospheres is preferred and about ambient pressure is morepreferred because pressures can be maintained with lower costs. Somereactive gas will generally need a vacuum pressure to retain theiractivity. Refining the semiconductor wafer surface wherein thesemiconductor wafer surface and the magnetically responsive refiningelements is in a sealed enclosed chamber having a vacuum can also bepreferred for some gaseous reactive agents. If a reactive gas whichgenerally needs a vacuum pressure is used for refining, then the chamberis designed using vacuum technology generally known in the experts inthe semiconductor wafer art. A first staging chamber can be used forstaging introduction of the semiconductor wafer into the refiningchamber and a second staging chamber can be used after refining of thesemiconductor wafers for removal. Automated wafer mechanical pickup andmovement arms are generally known in the skilled semiconductor waferartisans. Staging chambers, wafer pickup arms, wafer movement arms aregenerally commercially used in the semiconductor wafer arts andgenerally broadly used by commercial equipment suppliers. To simplifythe FIG. 1 b and improve ease of understanding, generally known aspectssuch as multiple staging chambers (introduction staging chamber(s) andremoval staging chamber(s)), wafer pickup arms, openable and sealablehatches for refining chambers, and wafer movement arms have been omittedbecause they are generally understood and used commercially by theskilled artisans in the semiconductor wafer arts. In other words, therecan be a prerefining chamber(s) and post refining chamber(s). In otherwords, there can be a workpiece handling and/or placement mechanism.Refining chambers can enhance the versatility of refining with amagnetically responsive refining element. The magnetically responsiverefining element is free of any mechanical driving mechanism whichpenetrates the refining chamber. This can reduce unwanted adventitiousparticulate contamination, improve yields, simplify and improve the useof gaseous oxidizing agents, and generally reduce the cost of therefining. The new refining chamber and the magnetically responsivefinishing element illustrated in FIG. 1 b have a new and usefulstructure which functions in a new and useful manner to generate a newand useful result.

FIG. 1 c is an artist's drawing of a particularly preferred embodimentof this invention when looking at a cross-section including theinterrelationships of some preferred objects when finishing according tothe method of this invention. Reference Numeral 30 represents a refiningchamber, preferably a sealed refining chamber, for refining orelectro-refining. Reference Numeral 660 represents the magneticelectro-refining element. Reference Numeral 662 represents an electrodein the electro-refining element. Reference Numeral 664 represents anoperative electrical connection to the electrode in the electro-refiningelement. A wire connection connected to the electrode with an effectivelength for movement of the electro-refining element is preferred.Reference Numeral 666 represents an operative electro-refining surfaceof the electro-refining element. A porous electro-refining surface is apreferred example of an operative electro-refining surface. A porouspolymeric surface is preferred and a porous organic polymeric surface ismore preferred. A porous polyurethane is an example of a porouselectro-refining surface. Reference Numeral 668 represents an operativeinlet for electro-refining composition. Reference Numeral 670 representsan electrical contact to workpiece surface for electro-refining.Reference Numeral 672 represents an operative electrical connection theelectrical contact to workpiece surface. A third electrode can be usedto further enhance control. In this case, the third electrode (e.g. areference electrode) is preferably used to control the voltage of thesemiconductor wafer electrode and the electro-refining element electrodeelectropotential is changed (controlled). This can be used to aidcontrol of the electro-refining and is generally known to those skilledin the electro-refining arts. Numeral 672 represents a down force fromthe magnetic coupling between the magnetic driving magnet and themagnetically responsive electro-refining element. For simplicity andease of understanding some generally known mechanism to form theelectrical contacts with the workpiece and preferably seal the backsidefrom electrolyte are not shown but are nonlimiting examples aredescribed in the United States patents contained herein by reference forguidance. Reference Numeral 160 represents the magnetically responsivematerial in the magnetic electro-refining element. A magneticallyresponsive electro-refining element free of a mechanical drivingmechanism is preferred. Reference Numeral 160 represents a materialcapable of magnetic attraction. A ferromagnetic material is a preferredmaterial capable of magnetic attraction. A paramagnetic material is apreferred material capable of magnetic attraction. In other words,Reference Numeral 160 represents a magnetically responsive member or amember capable of magnetic coupling. A permanent magnet is a preferredmagnetic material. A magnetically responsive member having a preferredcovering layer on the material capable of magnetic attraction ispreferred. The preferred covering layer can reduce or eliminate chemicaldegradation to the material capable of magnetic attraction such as iron.A preferred nonlimiting example of a covering layer is a polymericlayer. Reference Numeral 300 represents a holder for the workpiecesurface being finished. A holder for the workpiece can be orientedsubstantially horizontal, more preferably oriented horizontal (parallelwith the ground) is preferred. A holder for the workpiece can beoriented substantially vertical, more preferably oriented vertical(perpendicular with the ground) is also preferred. For some apparatusdesigns, a vertical orientation can have a smaller footprint and thus agenerally lower some of overhead cost to semiconductor wafermanufacturer. Further, for some finishing, removal of unwanted spentfinishing compositions for the workpiece surface can be effected withgravity and/or gravity assistance. Reference Numeral 305 represents anoptionally preferred adjustable retainer ring, more preferably a heightadjustable retainer ring. Adjustable retainer rings and mechanisms aregenerally known in background art commercial polishing equipment and canbe generally modified by those skilled in the art given the teachingsand guidance herein. Pneumatic adjustable retainer rings are onepreferred kind. Magnetically adjustable retainer rings are anotherpreferred kind. Mechanically adjustable retainer rings are still anotherpreferred kind. The retainer ring facilitates holding the workpieceduring finishing. An adjustable retainer ring can be used to finishinguniformity at the edge of the workpiece and a height adjustable retainerring can be used to finishing uniformity at the edge of the workpiece ismore preferred. Reference Numeral 315 represents a driving magnetassembly. Reference Numeral 310 represents the driving magnet body.Reference Numeral 320 represents the driving magnets. Reference Numeral330 represents the operative drive assembly between the driver for thedriving magnet assembly and the driving magnet assembly. ReferenceNumeral 340 represents the driver for the driving magnet assembly.Permanent magnets are a preferred driving magnet. Electromagnets are apreferred driving magnet. Reference Numeral 215 represents a drivingmovement of the driving magnet member. Reference Numeral 210 representsa resultant movement of the magnetic electro-refining element due to thedriving movement of the driving magnet (Reference Numeral 215).Reference Numeral 210 represents an operative refining motion. Anoperative electro-refining motion in the interface between the workpiecesurface being electro-refined and magnetic electro-refining elementfinishing surface. A magnetic operative refining motion in the interfacebetween the workpiece surface being electro-refined and magneticelectro-refining element electro-refining surface, as used herein, isthe operative electro-refining motion generated through the coupling thedriver magnet(s) and the magnetic finishing element. An operativeelectro-refining interface, as used herein, is the interface between theworkpiece surface being electro-refined and magnetic electro-refiningelement electro-refining surface. A coefficient of friction in theoperative electro-refining or refining or finishing interface of at most0.5 is preferred and of at most 0.4 is more preferred and of at most 0.3is even more preferred and of at most 0.2 is even more preferred and ofat most 0.15 is even more particularly preferred. A coefficient offriction in the operative electro-refining or refining or finishinginterface of at most 0.03 is preferred and of at least 0.05 is morepreferred. A coefficient of friction in the operative electro-refiningor refining or finishing interface of from 0.5 to 0.03 is preferred andof from 0.4 to 0.03 is more preferred and of from 0.3 to 0.05 is evenmore preferred. A low coefficient of friction can reduce unwantedsurface defects on the workpiece. Reference Numeral 225 representsoptionally preferred movement which changes the perpendicular distancebetween the magnetic electro-refining element and the magnetic drivingelement. Changing the perpendicular distance between the magneticelectro-refining element and the magnetic driving element is a preferredway to change the electro-refining pressure in the interface between themagnetic finishing element and the semiconductor wafer surface beingfinished (Reference Numeral 114). Reference Numeral 681 represents thein the operative finishing interface. The magnetic operativeelectro-refining pressure is the pressure generated in the interfacebetween the magnetic electro-refining element electro-refining surfaceand the workpiece surface being finished by the magnetic couplingbetween driver magnet(s) and magnetic electro-refining element. Anotherpreferred method to change the magnetic coupling force between theelectro-refining element and the driving magnet assembly is to usecontrollable electromagnets. The workpiece surface facing the finishingelement finishing surface is the workpiece surface beingelectro-refined. Reference Numeral 110 represents the workpiece. Theinterface between the workpiece surface being electro-refined and theelectro-refining element electro-refining surface is often referred toherein as the operative electro-refining interface. By adjusting thepressure and gap between the electro-refining surface and thesemiconductor wafer surface being refined, electrodeposition or theratio of the electrodeposition and frictional refining can becontrolled.

Refining and electro-refining in a chamber is preferred. Refining thesemiconductor wafer surface wherein the semiconductor wafer surface andthe magnetically responsive refining element is in an enclosed chamberis preferred. Refining the semiconductor wafer surface the semiconductorwafer surface and the magnetically responsive refining element in asealed enclosed chamber is more preferred. A first staging chamber canbe used for staging introduction of the semiconductor wafer into therefining chamber and a second staging chamber can be used after refiningof the semiconductor wafers for removal. Automated wafer mechanicalpickup and movement arms are generally known in the skilledsemiconductor wafer artisans. Staging chambers, wafer pickup arms, wafermovement arms are generally commercially used in the semiconductor waferarts and generally broadly used by commercial equipment suppliers. Tosimplify the FIGS. 1 b and 1 c and improve ease of understanding,generally known aspects such as multiple staging chambers (introductionstaging chamber(s) and removal staging chamber(s)), wafer pickup &placement arms, openable and sealable hatches for refining chambers,multiple processing chambers, general robotics, and wafer movement armshave been omitted because they are generally known and used commerciallyby the skilled artisans in the semiconductor wafer arts. In other words,there can be a prerefining chamber(s) and post refining chamber(s). Inother words, there can be a workpiece handling and/or placementmechanism. Refining chambers can enhance the versatility of refiningwith a magnetically responsive refining element. A refining chamber forsimultaneously refining a plurality of workpieces is preferred and forrefining a multiplicity of workpieces is more preferred. A magneticallyresponsive refining element free of any mechanical driving mechanismwhich penetrates the refining chamber is preferred. This can reduceunwanted adventitious particulate contamination, improve yields,simplify and improve the use of gaseous oxidizing agents, and generallyreduce the cost of the refining. The new refining chamber and themagnetically responsive finishing element illustrated in FIGS. 1 b and 1c have a new and useful structure which functions in a new and usefulmanner to generate a new and useful result.

Current densities between at least a portion of the interface betweenthe semiconductor wafer surface and the magnetically responsiveelectro-refining element of from 0.1 to 100 milliampere per squarecentimeter is preferred and from 10 to 100 milliampere per squarecentimeter is more preferred and from 15 to 80 milliampere per squarecentimeter is even more preferred and from 15 to 65 milliampere persquare centimeter is even more particularly preferred. The currentdensity can be continuous or discontinuous. For discontinuous currentdensities can be used to control electro-refining. A pulsed DC voltagecan be used to control electro-refining. Alternating magnitudes,polarities, and waveforms can be used to control electro-refining.Exemplary waveforms include square wave, sinusoidal, and sawtooth. Dutycycles can be varied to be control electro-refining. Generally a DCelectrical power supply is used (preferably a controllable DC electricalpower supply and more preferably an electronically controllable DCelectrical power supply). DC power supplies are generally known to thoseskilled in the arts and not illustrated for simplicity. The DCelectrical power supply and its output is preferably operativelyconnected to a control system, more preferably a control system having aprocessor for control during refining. The control system can be remotefrom the DC electrical power supply or integral to the DC electricalpower supply. Control systems and their use are discussed furtherelsewhere herein. A pressure in at least a portion of the interfacebetween the semiconductor wafer surface and the magnetically responsiveelectro-refining element of from 0.1 to 10 psi can be preferred.Controlling the current and pressure can help improve yields whenmanufacturing high precision workpieces. The electric field can have apolarity which removes material for the workpiece or add material to theworkpiece.

Electro-refining compositions such as solutions for adding material asillustrated by electro-deposition and electroplating solutions havegenerally been used. As an illustration, copper electroplating solutionsuse a copper salt such as copper sulfate in a water solution havingvarious additives such as levelers, grain refiners, wetting agents,stress reducing agents, and brighteners some of which are generallyillustrated by chemical derivatives of sulfonic acid, mercaptobenzene,2,4-imidazolidine-diol, thiobenhydantoin, polyethers, and polysulfdes.Known sulfuric acid solutions are illustrative examples for a solutionsuseful for electroplating of copper and alloys thereof. Electroplatingsolutions are generally known to those skilled in the electroplatingarts and further guidance and non-limiting illustrations may be found inU.S. Pat. Nos. 4,430,173 to Boudot et al., 4,948,474 to Miljkovic, and4,975,159 Dahms which are incorporated by reference in their entiretyfor further guidance and modification by those skilled in the relevantart. Combination electroplating (electrodeposition), mechanicalpolishing, and electropolishing solutions are also generally known.Electrodeposition is a preferred method of electro-refining for addingmaterial. Electropolishing is a preferred method of electro-refining forremoving material. Examples of compositions amendable toelectro-polishing include Cu, Al, Ti, Ta, W, Fe, Ag, Au, and alloysthereof. Known phosphoric acid solutions are illustrative examples for asolutions useful for electropolishing of copper and alloys thereof.Frictional refining is a preferred form of refining which can be usedwith electrodeposition. Frictional refining is a preferred form ofrefining which can be used with electropolishing. Refining andelectro-refining compositions are generally known. Combinationelectroplating (e.g. electrodeposition), mechanical polishing solutions,electropolishing solutions, and related technology and apparatustherefore are generally known to those skilled in the semiconductorwafer processing arts as illustrated by non-limiting examples found inU.S. Pat. Nos. 5,256,565 to Bernhardt et al., 5,567,300 to Datta et al.,5,807,165 to Uzoh et al., 5,897,165 to Uzoh et al., 6,004,880 to Liu etal., 6,354,916 to Uzoh et al., and 6,368,190 to Easter et al. and USApplication 2002/0011417 to Talieh et al. which are incorporated byreference in their entirety for further guidance and modification bythose skilled in the relevant art. Copper plating solutions andadditives also generally available commercially by such companies asShipley, LeaRonal, and Enthone-OMI under related company tradenames.Preferred embodiments of magnetically responsive refining elements andrefining methods using them have a different structure and function in anew and different way and deliver a new and more versatile result.

As illustrated in FIGS. 1 a, 1 b, and 1 c the apparatus, refiningelements, and methods can be very versatile. In one preferredembodiment, operative electro-refining element and be used with arefining element free of electro-refining capacity (or capability) torefine the workpiece. In one preferred embodiment, operativeelectro-refining element for adding material can be used with a refiningelement free of electro-refining capacity (or capability) to refine theworkpiece. In one preferred embodiment, operative electro-refiningelement for adding material can be used with a non-abrasive refiningelement free of electro-refining capacity (or capability) to refine theworkpiece. In one preferred embodiment, operative electro-refiningelement for adding material can be used with an abrasive refiningelement free of electro-refining capacity (or capability) to refine theworkpiece. In one preferred embodiment, operative electro-refiningelement for removing material can be used with a refining element freeof electro-refining capacity (or capability) to refine the workpiece. Inone preferred embodiment, operative electro-refining element forremoving material can be used with a non-abrasive refining element freeof electro-refining capacity (or capability) to refine the workpiece. Inone preferred embodiment, operative electro-refining element forremoving material can be used with an abrasive refining element free ofelectro-refining capacity (or capability) to refine the workpiece.

As illustrated in FIGS. 1 a, 1 b, and 1 c the apparatus, refiningelements, and methods can be very versatile. In one preferredembodiment, operative electro-refining element having a region forapplying an operative electric field for electro-refining and alsohaving a different refining region (such as a discrete finishing membersurface) free of electro-refining capacity (or capability) to refine theworkpiece. In one preferred embodiment, operative electro-refiningelement having a region for applying an operative electric field forelectro-refining and also having a different abrasive refining region(such as a discrete finishing member surface) free of electro-refiningcapacity (or capability) to refine the workpiece. In one preferredembodiment, operative electro-refining element having a region forapplying an operative electric field for electro-refining and alsohaving a different non-abrasive refining region (such as a discretefinishing member surface) free of electro-refining capacity (orcapability) to refine the workpiece. An electro-refining region havingan operative electric field applied for adding material is preferred. Anelectro-refining region having an operative electric field applied forremoving material is preferred.

Further illustrating in FIGS. 1 a, 1 b, and 1 c the apparatus, refiningelements, and methods can be very versatile. In one preferredembodiment, a refining element can have a region abrasive refining and adifferent region for non-abrasive refining. In one preferred embodiment,a refining element can having an abrasive refining surface can be usedalong with a second refining element having a non-abrasive surface.Where a plurality of refining element are used, they can the same ordifferent operative finishing motions. A different refining elements canapply a different pressure (or pressure profile) and can, preferably becontrolled independently. The different refining elements can haverelative velocities (and preferably can be controlled independently).The different refining elements can have different paths (circular vs.linear, circular vs. orbital, orbital vs. linear). The differentrefining elements can have different refining cycle times. The differentrefining elements can have different control parameters. The differentrefining elements can have different control algorithms. A processor canbe used for control of these different embodiments. Because of theversatility and the need for very high precision finishing for someworkpieces, a tracking code for a refining is preferred. Historicalperformance and control information can be stored with the refiningelement tracking code and then this information used for control.

FIG. 2 is an artist's drawing of a preferred embodiment when lookingfrom at a cross-section including the interrelationships of somepreferred objects when finishing according to the method of thisinvention. Reference Numeral 120 represents the magnetic finishingelement. A magnetically responsive finishing element free of anyphysically connected movement mechanism is preferred. Reference Numeral140 represents a discrete finishing member. Reference Numeral 142represents the finishing element finishing surface. Reference Numeral160 represents a magnetic member capable of magnetic attraction.Reference Numeral 170 represents a preferred coating on the materialcapable of magnetic attraction. The preferred coating layer can reduceor eliminate chemical degradation to the magnetic member capable ofmagnetic attraction. A preferred nonlimiting example of a coating is apolymeric coating. Reference Numeral 300 represents a holder for theworkpiece surface being finished. Reference Numeral 305 represents anoptionally preferred height adjustable retainer ring. The retainer ringfacilitates holding the workpiece during finishing. An adjustableretainer ring can be used to finishing uniformity at the edge of theworkpiece and a height adjustable retainer ring can be used to finishinguniformity at the edge of the workpiece is more preferred. ReferenceNumeral 315 represents a driving magnet assembly. Reference Numeral 310represents the driving magnet body. Reference Numeral 320 represents thedriving magnets(s). Reference Numeral 330 represents the operative driveassembly between the driver for the driving magnet assembly and thedriving magnet assembly. Reference Numeral 340 represents the driver forthe driving magnet assembly. Permanent magnets are a preferred drivingmagnet. Electromagnets are a preferred driving magnet. Reference Numeral215 represents a driving movement of the driving magnet member.Reference Numeral 210 represents a resultant movement of the magneticfinishing element due to the driving movement of the driving magnet(Reference Numeral 215). Reference Numeral 225 represents optionallypreferred movement which changes the perpendicular distance between themagnetic finishing element and the magnetic driving element. Changingmagnetic coupling by changing the perpendicular distance between themagnetically responsive finishing element and the magnetic drivingelement can be used to change the finishing pressure in the interfacebetween the magnetic finishing element and the semiconductor wafersurface being finished. (Reference Numeral 220). Another preferredmethod to change the magnetic coupling force between the magneticallyresponsive finishing element and the driving magnet assembly is to usecontrollable electromagnets. Another preferred method of changing and/orcontrolling the coupling force between the magnetically responsivefinishing element and the driving magnet assembly is use a permanentmagnet modified to provide a dynamically controllable coupling force. Anelectronically controllable coupling force is an example of adynamically controllable coupling force. The workpiece surface facingthe finishing element finishing surface is the workpiece surface beingfinished. Operative finishing motion consisting essentially of operativemotion driven by the magnetic coupling the driver magnet and themagnetic finishing element is very preferred. Operative finishing motionconsisting of operative motion driven by the magnetic coupling betweenthe driver magnet and the magnetic finishing element is especiallypreferred. Reference Numeral 110 represents the workpiece. ReferenceNumeral 200 represents a finishing composition and optionally, thealternate finishing composition disposed between the workpiece surfacebeing finished and finishing element finishing surface. The interfacebetween the workpiece surface being finished and the finishing elementfinishing surface is often referred to herein as the operative finishinginterface. A finishing composition comprising a water based compositionis preferred. A finishing composition comprising a water basedcomposition which is substantially free of abrasive particles ispreferred. The workpiece surface being finished is in operativefinishing motion relative to the finishing element finishing surface.The workpiece surface being finished in operative finishing motionrelative to the finishing element finishing surface is an example of apreferred operative finishing motion. A preferred operative finishingmotion is a parallel motion between the surface of the workpiece beingfinished and finishing element finishing surface with an effectivebetween pressure applied therebetween.

Operative sensors, controllers, and processors are preferred for somefinishing applications. FIG. 2 shows a preferred embodiment of operativesensors, controllers, and processors. Reference Numeral 3000 representsan operative workpiece sensor. A preferred workpiece sensor is anon-contact sensor. Illustrated is a radiation sensor (such as a lasersensor) showing the emitted radiation and the returned radiation(Reference Numeral 3005). The operative workpiece sensor is connected toa workpiece sensor controller (Reference Numeral 3015) with an operativeconnection (Reference Numeral 3010). The workpiece sensor controller isoperatively connected to a processor (Reference Numeral 3060). As usedherein, a workpiece sensor subassembly comprises an operative workpiecesensor, a workpiece controller, a processor, and operative connectionsor communication therebetween. Reference Numeral 3030 represents amagnetic finishing element sensor. A non-contact magnetic finishingelement sensor is preferred. An electronically responsive coil elementto a moving magnetic field is a magnetic sensor. Illustrated is aradiation magnetic finishing element sensor (such as a laser sensor)showing the emitted radiation and the returned radiation (ReferenceNumeral 3040). The operative magnetic finishing element sensor isconnected to a magnetic finishing element sensor controller (ReferenceNumeral 3045) with an operative connection (Reference Numeral 3050). Themagnetic finishing element sensor controller is operatively connected toa processor (Reference Numeral 3060). As used herein, a magneticfinishing element sensor subassembly comprises an operative magneticfinishing element sensor, a magnetic finishing element controller, aprocessor, and operative connections or communication therebetween.Reference Numeral 3100 represents a controller for the driving magnetassembly and the driver for the driving magnet assembly. ReferenceNumeral 3105 represents an operative connection between the controller(Reference Numeral 3100) for the driving magnet assembly (ReferenceNumeral 315) and the magnetic driver (Reference Numeral 340). ReferenceNumeral 3110 represents an operative connection between the controllerand the driver for the driving magnet assembly. A driver magnetic sensorsubassembly comprising an operative driving magnetic assembly sensor, anoperative driver sensor (for the driving magnetic assembly sensor), acontroller for the operative driving magnetic assembly, a controller forthe driver sensor (for the driving magnetic assembly sensor), aprocessor, and operative connections or communication therebetween.Given the teachings and guidance herein, those generally skilled in therelevant art can readily assemble a driver magnetic sensor subassembly.

This illustrated method of real time control of magnetic refining orfinishing is preferred. An operative real time control subsystemcomprising a magnetic refining element sensor subassembly is preferredand an operative real time control subsystem comprising a magneticrefining element sensor subassembly having a plurality of magneticrefining element sensors is more preferred. An operative real timecontrol subsystem comprising a magnetic finishing element sensorsubassembly is preferred and an operative real time control subsystemcomprising a magnetic finishing element sensor subassembly having aplurality of magnetic finishing element sensors is more preferred. Anoperative real time control subsystem comprising workpiece sensorsubassembly is preferred and operative real time control subsystemcomprising workpiece sensor subassembly having a plurality of workpiecesensors is more preferred. An operative real time control subsystemcomprising a driver magnet sensor subassembly is also preferred and anoperative real time control subsystem comprising a driver magnet sensorsubassembly having a plurality of driver magnet sensors is morepreferred. An operative real time control subsystem which is free ofphysical contact with the workpiece surface being finished is apreferred magnetic finishing controller. A magnetic refining controllerwhich changes the magnetic coupling between the magnetic driver and themagnetic refining element is preferred and a magnetic refiningcontroller which changes the magnetic coupling field(s) between themagnetic driver and the magnetic refining element is a more preferredmagnetic refining controller. A magnetic refining controller whichchanges the magnetic coupling between an electromagnetic driver and themagnetic refining element is preferred and a magnetic refiningcontroller which changes the magnetic coupling field(s) between theelectromagnetic driver and the magnetic refining element is a morepreferred magnetic refining controller. A magnetic refining controllerwhich changes the magnetic coupling between an magnetic driver having apermanent magnet with an electronically controllable field strength, andthe magnetic refining element is preferred and a magnetic refiningcontroller which changes the magnetic coupling field(s) between theelectromagnetic driver and the magnetic refining element is a morepreferred magnetic refining controller. A magnetic finishing controllerwhich changes the magnetic coupling between the magnetic driver and themagnetic finishing element is preferred and a magnetic finishingcontroller which changes the magnetic coupling field(s) between themagnetic driver and the magnetic finishing element is a more preferredmagnetic finishing controller. A magnetic finishing controller whichchanges the magnetic coupling between an electromagnetic driver and themagnetic finishing element is preferred and a magnetic finishingcontroller which changes the magnetic coupling field(s) between theelectromagnetic driver and the magnetic finishing element is a morepreferred magnetic finishing controller. A magnetic finishing controllerwhich changes the magnetic coupling between an magnetic driver having apermanent magnet with an electronically controllable field strength, andthe magnetic finishing element is preferred and a magnetic finishingcontroller which changes the magnetic coupling field(s) between theelectromagnetic driver and the magnetic finishing element is a morepreferred magnetic finishing controller.

FIG. 3 is an artist's drawing of the interrelationships magneticfinishing element disposed on top of semiconductor wafer surface beingfinished according to a preferred embodiment of this invention.Reference Numeral 110 represents the workpiece. Reference Numeral 114represents the workpiece surface being finished. A plurality of unwantedhigh regions can often be present on the workpiece surface beingfinished. During finishing, the high region(s) is preferablysubstantially removed and more preferably, the high region is removedand surface polished. Reference Numeral 120 represents the magneticfinishing element. A magnetic refining element having a surface area insquare centimeters which is at least as large workpiece repeatingpatterns (such as semiconductor wafer die) is preferred and at least aslarge as three repeating patterns is more preferred. A magnetic refiningelement having a surface area in square centimeters from the surfacearea of a die in square centimeters to at most the surface area of asemiconductor wafer surface being refined in square centimeters is morepreferred. A magnetic finishing element having a surface area in squarecentimeters which is at least as large workpiece repeating patterns(such as semiconductor wafer die) is preferred and at least as large asthree repeating patterns is more preferred. Reference Numeral 140represents an optional upper layer of material capable of magneticattraction which is in turn coated with an anticorrosive layer.Reference Numeral 135 represents the optional discrete finishing members(side opposite of the finishing surface) which is underneath ReferenceNumeral 140 in this view. Reference Numeral 20 represents a finishingcomposition feed line for adding other chemicals to the surface of theworkpiece such as acids, bases, buffers, other chemical reagents, andthe like. The finishing composition feed line can have a plurality ofexit orifices. Reference Numeral 22 represents a reservoir of finishingcomposition to be fed to finishing element finishing surface. Not shownis the feed mechanism for the finishing composition such as a variablepressure or a pump mechanism. Reference Numeral 24 represents analternate finishing composition feed line for adding the finishingchemicals composition to the finishing element finishing surface toimprove the quality of finishing. Reference Numeral 26 represents analternate finishing composition reservoir of chemicals to be,optionally, fed to finishing element finishing surface. ReferenceNumeral 210 represents a preferred finishing motion. Not shown is thefeed mechanism for the alternate finishing composition such as avariable pressure or a pump mechanism. A preferred embodiment of thisinvention is to feed liquids from the finishing composition line and thealternate finishing composition feed line which are free of abrasiveparticles. Reference Numeral 2000 represents a small surface area ofworkpiece surface being finished having a repeating pattern (such assemiconductor wafer die) each having a repeating subpattern of unwantedregions (such as unwanted raised regions). In FIG. 3 a, ReferenceNumeral 2005 represents a magnified view of Reference Numeral 2000 ofFIG. 3. Reference Numeral 2010 represents the repeating pattern (such assemiconductor wafer die) each having a repeating subpattern of unwantedregions represented by Reference Numeral 2020 (such as unwanted raisedregions).

FIG. 4 is an artist's drawing of the interrelationships magneticfinishing element disposed on top of semiconductor wafer surface beingfinished according to a preferred embodiment of this invention.Reference Numeral 110 represents the workpiece. Reference Numeral 114represents the workpiece surface being finished. A plurality of unwantedhigh regions can often be present on the workpiece surface beingfinished. During finishing, the high region(s) is preferablysubstantially removed and more preferably, the high region is removedand surface polished. Reference Numerals 120 and 1020 represent a firstand an optional second magnetic finishing elements, respectively.Reference Numeral 138 and 1038 represent upper layers of materialcapable of magnetic attraction (and/or magnetic coupling) which can becoated with optional anticorrosive layer(s). Reference Numeral 136 and1036 represents the optional discrete finishing members (side oppositeof the finishing surface) for the first and an optional second magneticfinishing elements, respectively. Reference Numeral 210 and 216represent a first and a second operative finishing motions moving on thesurface of the workpiece being finished. As shown in this embodiment,the first and second finishing motions can be related or independent ofeach other. Reference Numerals 212 and 218 represent a third and afourth operative finishing motions of the first and second finishingelements which are different from each other. Finishing a workpiece witha plurality of finishing motions is preferred. Finishing a workpiecewith a plurality of finishing elements is preferred and finishing aworkpiece with a plurality of finishing elements wherein each finishingelement has a plurality of operative finishing motions is morepreferred. Numeral 20 represents a finishing composition feed line foradding other chemicals to the surface of the workpiece such as acids,bases, buffers, other chemical reagents, and the like. The finishingcomposition feed line can have a plurality of exit orifices. ReferenceNumeral 22 represents a reservoir of finishing composition to be fed tofinishing element finishing surface. Not shown is the feed mechanism forthe finishing composition such as a variable pressure or a pumpmechanism. Reference Numeral 24 represents an alternate finishingcomposition feed line for adding the finishing chemicals composition tothe finishing element finishing surface to improve the quality offinishing. Reference Numeral 26 represents an alternate finishingcomposition reservoir of chemicals to be, optionally, fed to finishingelement finishing surface. Not shown is the feed mechanism for thealternate finishing composition such as a variable pressure or a pumpmechanism. Reference Numeral 3200 represents an operative sensor, morepreferably a plurality of operative sensors. Reference Numeral 3210represents a processor. Reference Numeral 3220 represents a controller.Reference Numeral 3230 represents operative connections. ReferenceNumeral 7000 represents a refining element placement robot (ormechanism) for the magnetically responsive refining element(s). Aplacement arm having a magnetic member to lift, place, and release themagnetically responsive refining element. An operative refining elementrobot operatively connected to a control subsystem having a process ispreferred. A means to read a tracking code on a refining element is alsopreferred. A processor to evaluate information such as tracking codesand historical performance of the refining element is preferred.Preferably, the magnetic member of the placement arm is anelectromagnetic. A controller to control lifting, placement, release,and other related process parameters is also preferred. A preferredembodiment of this invention is to feed liquids from the finishingcomposition line and the alternate finishing composition feed line whichare free of abrasive particles. By using multiple finishing elements,finishing rates can generally be reduced and/or finishing versatilityenhanced.

FIG. 5 is an artist's closeup drawing of a preferred embodiment of thisinvention showing some further interrelationships of the differentobjects when finishing according to the method of this invention.Reference Numeral 110 represents the workpiece. The workpiece is inoperative contact with the magnetic finishing element finishing surfaceduring finishing (represented by a discrete finishing element finishingsurface Reference Numeral 142). Reference Numeral 114 represents thesurface of the workpiece being finished. Reference Numeral 120represents the magnetic finishing element. Reference Numeral 140represents a discrete finishing member. Reference Numeral 142 representsthe discrete finishing member finishing surface. Optional abrasivematerials are preferably dispersed on the surface of the discretefinishing member finishing surface. Reference Numeral 200 represents thefinishing composition and optionally, the alternate finishingcomposition supplied between the workpiece surface being finished andsurface of the finishing element facing the workpiece. For someapplications the finishing composition and the alternate finishingcomposition can be combined into one feed stream, preferably free ofabrasive particles. Reference Numeral 160 represents a material capableof magnetic attraction (or magnetic coupling material). ReferenceNumeral 162 represents the magnetic attraction and/or coupling betweenthe magnetic driver and the magnetic finishing element. ReferenceNumeral 165 represents an optional coating on the material capable ofmagnetic attraction. Reference Numeral 172 represents magnetic materialsuch as magnetic particles. Reference numeral 165 represents aprotective layer covering for Reference Numeral 160. Reference Numeral300 represents the workpiece holder. Reference Numeral 4010 representsoptional flux pins in the workpiece holder to improve magnetic couplingbetween the finishing element and the magnetic driver subsystem.Reference Numeral 4000 represents optional passageways in the workpieceholder. In this embodiment the passageways are used for temperaturecontrol (for example temperature control fluids. Reference Numeral 315represents the magnetic driver assembly. Reference Numeral 310represents an optional body for the magnetic driver subsystem. ReferenceNumerals 810 and 811 represent optionally different magnetic driversand/or different magnetic poles on a magnetic driver. The magneticdrivers can be electromagnetic. Optionally and preferably theelectromagnetic driver, and more preferably a plurality ofelectromagnetic magnetic drivers can be controlled by the controller.

FIG. 6 is an artist's closeup drawing of a preferred embodiment of thisinvention showing some further interrelationships of the differentobjects when finishing according to the method of this invention.Reference Numeral 110 represents the workpiece. The workpiece is inoperative contact with the magnetic finishing element finishing surfaceduring finishing (represented by a discrete finishing element finishingsurface Reference Numeral 142). Reference Numeral 114 represents thesurface of the workpiece being finished. Reference Numeral 120represents the magnetic finishing element. Reference Numeral 802represents the unwanted raised regions illustrated with at least onerepeating pattern on the surface of the workpiece surface beingfinished. Reference Numeral 140 represents a discrete finishing member.Reference Numeral 142 represents the discrete finishing member finishingsurface. Optional abrasive materials are preferably dispersed on thesurface of the discrete finishing member finishing surface. ReferenceNumeral 200 represents the finishing composition and optionally, thealternate finishing composition supplied between the workpiece surfacebeing finished and surface of the finishing element facing theworkpiece. For some applications the finishing composition and thealternate finishing composition can be combined into one feed stream,preferably free of abrasive particles. Reference Numeral 160 representsa material capable of magnetic attraction. Reference Numeral 165represents an optional coating on the material capable of magneticattraction. In FIG. 6, Reference Numeral 171 represents a region in thematerial capable of magnetic attraction which is magnified in FIG. 6 b.In FIG. 6 b, Reference Numeral 173 represents a magnified view of apreferred material capable of magnetic attraction having comprising amagnetic composition such as a polymeric resin with iron particlesdispersed therein. The material capable of magnetic attractioncomprising a paramagnetic particles is preferred. The material capableof magnetic attraction comprising a ferromagnetic magnetic particles isalso preferred. Reference Numeral 172 represents magnetic material suchas magnetic particles. Reference numeral 165 represents a protectivelayer covering for Reference Numeral 160.

FIGS. 7 a, 7 b, and 7 c are an artist's representation of the crosssection of some preferred embodiments of the magnetic finishing elementsof this invention. In FIG. 7 b Reference Numeral 120 represents themagnetic finishing element. In FIGS. 7 a, 7 b, and 7 c Reference Numeral130 represents the unitary resilient body in the finishing element. InFIGS. 7 a, 7 b, and 7 c Reference Numeral 140 represents one of thediscrete finishing members and Reference Numeral 142 represents thediscrete finishing member finishing surface. Reference Numeral 402represents a high flexural modulus finishing region. Reference Numeral175 represents magnetic composite member(s) which preferably have acorrosion resistant coating. A magnetic composite is a nonlimitingexample of a magnetically responsive material. The high flexural modulusfinishing region corresponds to the region of the discrete finishingmember (which is a higher flexural modulus). Reference Numeral 404represents a low flexural modulus region between the high flexuralmodulus finishing regions. A preferred aspect shown in FIG. 7 a is thediscrete finishing members connected to the surface of a unitaryresilient body comprising a sheet of resilient organic polymer. In FIG.7 a, there are shown open spaces (Reference Numeral 400) between thediscrete finishing members. A magnetic finishing element of this formcan be manufactured by for instance laminating a continuous sheet of thefinishing member material to a magnetic composite material such as aresin composite having magnetic particles therein and then laser cuttingor mechanically milling out the spaces there between using technologyknown to those skilled in the arts. Reference Numeral 450 represents apreferred motion which the magnetic composite can impart to the discretefinishing member to improve local planarity while retaining some globalflexibility at Reference Numeral 400 if a flexible magnetic compositestructure is used such as a thermoplastic material having magneticparticles dispersed therein. This cooperative motion between the unitaryresilient body and the magnetic composite is unique to the finishingelement of this invention.

In FIG. 7 b, there is a shown discrete finishing members fixedlyattached to the surface of a unitary resilient body comprising a sheetof resilient organic polymer (Reference Numeral 130) and furthercomprising a magnetic composite member (or layer) (Reference Numeral175) connected to the surface of the unitary resilient body facing awayfrom the finishing element members. A reinforcing film is an optionallypreferred fourth layer which is not shown. A reinforcing layer havingfibers is another optionally preferred third layer. The fourth layerpreferably can be used to reinforce the finishing element. The fourthlayer preferably can be used to stabilize the finishing element and/orthe movement of the discrete finishing members. Reference Numeral 460represents a preferred motion which the unitary resilient body canimpart to the discrete finishing member to improve local planarity whileretaining some moderated global flexibility at Reference Numeral 400. Amagnetic finishing element having discrete finishing member(s) and theunitary resilient body influence the motion 460. Again the cooperativemotion between the unitary resilient body, the discrete finishingmember, and the magnetic composite layer is unique to the finishingelement of this invention. In this embodiment the unitary resilient bodyand magnetic composite layer applies a substantially uniform pressureacross the backside surface of the discrete finishing members and morepreferably the unitary resilient body applies a uniform pressure acrossthe backside surface of the discrete finishing members.

In FIG. 7 c, there is shown electro-refining members connected to aconnecting material and which are disposed in recesses (ReferenceNumeral 692) of the connecting material (Reference Numeral 680).Reference Numeral 682 represents a discrete refining member, preferablya discrete electro-refining member, and more preferably a porousdiscrete electro-refining member. It is recognized that the connectingmaterial can be proximal to the refining member refining surface (seeReference Numeral 684) and thus can aid in refining. Alternately theconnecting material can be spaced apart from the discrete refiningmember refining surface and thus not rub against the workpiece duringoperative refining motion. The recesses can further aid in connectingthe refining member to the connecting material. The recesses can form apreferred friction mechanism to facilitate attaching the discreterefining member(s) to the unitary resilient body. Also in FIG. 7 c,there is shown a plurality of discrete regions of separated magneticallyresponsive material (Reference Numeral 689 & 690) preferably disposed inrecesses (Reference Numeral 694) of the connecting material. In onepreferred embodiment the magnetically responsive material (ReferenceNumeral 689 and Reference Numeral 690) have a recess to permit anoperative electrical connection (Reference Numeral 688) to an operativeelectrode (Reference Numeral 686). The magnetically responsive materialcan be the same or different in Reference Numeral 689 and 690. Forinstance the concentration or type of magnetically responsive can bedifferent. For instance, in a first region a first magneticallyresponsive material can be a temporarily attracted to a permanent magnetno matter the magnetic pole while in a different region a secondmagnetically responsive material can be a permanent magnet which isrepulsed like poles and attracted with opposite magnetic poles. Thus onecan readily see that not only can localized positive pressure be appliedto refining interface between a workpiece surface and refining elementbut also a negative pressure (or reduced pressure) can be appliedenhancing control of refining. A plurality of different magneticallyresponsive materials in a refining element can be preferred and aplurality of different magnetically responsive materials, each in spacedapart locations can be more preferred. The separate magneticallyresponsive material can further reinforce the unitary resilient bodyand/or change the motion the discrete refining member(s). Having aplurality of separate magnetically responsive material members canimprove the flexibility of the refining element to follow some of theglobal non uniformities in the wafer while the discrete refining membersimprove local planarity during electrodeposition and/or electropolishing(preferably within die uniformity). The recesses can further aid inconnecting the magnetically responsive material to the connectingmaterial (preferably a polymer) and to the magnetically responsivematerial members. Reference Numeral 470 represents a preferred motionwhich the connecting material and magnetically responsive materialmembers can impart to the discrete refining member(s) to improve localplanarity while retaining some global flexibility at Reference Numeral684. The magnetically responsive material members and the connectingmaterial cooperate to influence the motion 470. Again the cooperativemotion between the magnetically responsive material member, theconnecting material, the discrete electro-refining member(s), andelectrode is unique, preferred embodiment of this invention. Optionallythe electro-refining members can have the same or different compositionsand/or structures. For example, an electro-refining member can have ahigher porosity and another electro-refining member can have a lowerporosity in comparison. As a further example, an electro-refining membercan have a higher flexural modulus and another electro-refining membercan have a lower flexural modulus. These preferred options can improvethe versatility of magnetic electro-refining.

Reference Numerals 450, 460, and 470 represent preferred up and downmotions of the discrete finishing member finishing surfaces duringfinishing. Movement of the discrete finishing member finishing surfaceswhich remain substantially parallel with the workpiece surface beingfinished during finishing is preferred and applying movements to thediscrete finishing member finishing surfaces which are within 3 degreesof parallel with the workpiece surface being finished are more preferredand applying movements to the discrete finishing member finishingsurfaces which are within 2 degrees of parallel with the workpiecesurface being finished are even more preferred and applying movements tothe discrete finishing member finishing surfaces which are within 1degree of parallel with the workpiece surface being finished are evenmore preferred. Reference Numeral 114 (workpiece surface being finished)and Reference Numeral 142 (finishing element finishing surface) aredepicted in FIG. 5 in a substantially parallel relationship. By keepingthe discrete finishing members substantially parallel with the workpiecesurface during finishing, unwanted surface damage can generally bereduced or eliminated. Applying a variable pressure to the backside ofthe discrete finishing members as shown in FIGS. 8 a & 8 b canfacilitate maintaining this parallel relationship.

A finishing element having discrete finishing members having at least ofa portion of its surface facing away from the workpiece being finishedspaced apart from the unitary resilient body is preferred for someapplications. FIGS. 8 a and 8 b are artist's expanded cross-sectionalview representing some preferred spaced apart embodiments. FIG. 8 arepresents an artist's cross-section view showing a portion of backsideof the discrete finishing member attached, more preferably fixedlyattached, to the unitary resilient body. Reference Numeral 175represents the magnetic composite member (or layer). Reference Numeral140 represents the discrete finishing member and Reference Numeral 142represents the finishing surface of the discrete finishing member.Reference Numeral 143 represents the surface of the discrete finishingmember facing away from the workpiece being finished and is oftenreferred to herein as the backside of the discrete finishing member.Reference Numeral 400 represents an optional open space between thediscrete finishing members. Reference Numeral 400 can be a passage wayfor supplying the finishing composition to the discrete finishing memberfinishing surface. Reference Numeral 435 represents a portion of thebackside of the discrete finishing member spaced apart from the unitaryresilient body. In other words, at least a portion of the backsidesurface of the discrete finishing member is free of contact with theunitary resilient body. Reference Numeral 435 represents a spaced apartregion between the unitary resilient body and the discrete finishingmember. Numeral 436 represents a portion of the backside of the discretefinishing member which is preferably fixedly attached to unitaryresilient body in FIG. 8 a (and the unitary resilient body is thenattached, more preferably fixedly attached, to magnetic compositemember). By applying only local pressure to the discrete finishingmember backsides with the magnetic composite members, a nonuniformpressure can be applied to the backside of the discrete finishing memberin order to aid control the pressure applied to workpiece surface beingfinished (see FIG. 8 a). By having a portion of the backside of thediscrete finishing member spaced apart from the unitary resilient bodyand a different portion of the backside of the discrete finishing memberfixedly attached to the unitary resilient body, a nonuniform pressurecan be applied to the backside of the discrete finishing member in orderto control the pressure applied to workpiece surface being finished (seeFIG. 8 b). A backside of the discrete finishing member proximate atleast a portion of the perimeter of the discrete finishing memberattached, more preferably fixedly attached, to the unitary resilientbody and/or the magnetic composite member is preferred and a backside ofthe discrete finishing member proximate to the perimeter of the discretefinishing member attached, more preferably fixedly attached, to theunitary resilient body and/or the magnetic composite member is morepreferred. A nonuniform pressure applied to the backside of the discretefinishing member proximate at least a portion of the perimeter of thediscrete finishing member is preferred and a nonuniform pressure appliedto the backside of the discrete finishing member proximate at least theperimeter of the discrete finishing member is more preferred. Thisnonuniform pressure can help compensate for shear stresses duringfinishing to improve maintaining the discrete finishing member finishingsurface parallel to the workpiece surface being finished. Someillustrative motions of the discrete finishing member is represented inReference Numeral 480 for illustration. Nonuniform pressure applied tothe backside of the discrete finishing member can help reduce unwantedsurface damage. Applying a nonuniform pressure to the backside of thediscrete finishing member for maintaining the discrete finishing memberfinishing surface substantially parallel to the workpiece surface beingfinished is preferred.

FIG. 8 b represents an artist's cross-section view showing a portion ofbackside of the discrete finishing member fixedly attached to theunitary resilient body. Reference Numeral 130 represents the unitaryresilient body. Reference Numeral 140 represents the discrete finishingmember and Reference Numeral 142 represents the finishing surface of thediscrete finishing member. Reference Numeral 143 represents the surfaceof the discrete finishing member facing away from the workpiece beingfinished and is often referred to herein as the backside of the discretefinishing member. Reference Numeral 440 represents an optional openspace between the discrete finishing members. Reference Numeral 440 canbe a passage way for supplying the finishing composition to the discretefinishing member finishing surface. Reference Numeral 175 represents themagnetic composite member (or layer). Optionally, the magnetic compositelayer can reinforce the finishing element and/or change the resilience.The magnetic composite layer is attached to the directly or indirectlyto the finishing surface. The magnetic composite layer (or magneticcomposite member) can be attached to the finishing surface, or instance,through the unitary resilient body. The magnetic composite layer ispreferably fixedly attached to the unitary resilient body. ReferenceNumeral 434 represents a portion of the backside of the discretefinishing member spaced apart from the unitary resilient body. ReferenceNumeral 440 represents a spaced apart region between the unitaryresilient body and the discrete finishing member. Reference Numeral 436represents a portion of the backside of the discrete finishing memberwhich is attached to unitary resilient body. By having a portion of thebackside of the discrete finishing member spaced apart from the unitaryresilient body and a different portion of the backside of the discretefinishing member fixedly attached (and/or in contact with) to theunitary resilient body, a nonuniform pressure can be applied to thebackside of the discrete finishing member in order to control thepressure applied to workpiece surface being finished. This nonuniformpressure can help compensate for shear stresses during finishing toimprove maintaining the discrete finishing member finishing surfaceparallel to the workpiece surface being finished. This can help reduceunwanted surface damage. By having a portion of the backside of thediscrete finishing member spaced apart from the unitary resilient bodyand a different portion of the backside of the discrete finishing memberfixedly attached (and/or in contact with) to the unitary resilient body,a nonuniform pressure can be applied to the backside of the discretefinishing member in order to control the pressure applied to workpiecesurface being finished. This nonuniform pressure can help compensate forshear stresses during finishing to improve maintaining the discretefinishing member finishing surface parallel to the workpiece surfacebeing finished. Some illustrative motions of the discrete finishingmember is represented in Reference Numeral 485 for illustration.Nonuniform pressure applied to the backside of the discrete finishingmember can help reduce unwanted surface damage. Applying a nonuniformpressure to the backside of the discrete finishing member formaintaining the discrete finishing member finishing surfacesubstantially parallel to the workpiece surface being finished ispreferred. An organic lubricating boundary layer is also preferred toreduce unwanted surface damage and unwanted shear forces.

Each of these constructions shown in FIGS. 7 a, 7 b, and 7 c and 8 a and8 b can be preferable for different workpiece topographies neededparticular finishing. Various combinations can also be preferred. Theshapes of the cooperating pieces, their thickness, and their physicalparameters such as flexural modulus and magnetic strength can be used toimprove local and global planarity. The local and global magnetic forcesapplied to the magnetic finishing element can be customized for theindividual semiconductor wafer design and finishing needs by adjustingthe parameters herein discussed. The local and global forces can also beadjusted by proper design of the magnetic finishing element for theindividual semiconductor wafer design and finishing needs by adjustingthe parameters herein discussed. A magnetic member contained in at leasta portion of the magnetic finishing element is preferred for applyingthe preferred operative finishing motion. A finishing element having theabove cooperating elements works in a new and different manner fordelivering a new and useful finishing result. Further, since in apreferred mode the discrete finishing member, the magnetic member(s),and the unitary resilient body are fixedly attached (and/or in contactwith) to each other and they function in a new and interdependentmanner. A finishing element having a plurality of discrete finishingsurfaces attached to a magnetic member for applying an interdependentlocalized pressure to the operative finishing interface is verypreferred. Applying localized pressure to the operative finishinginterface with a plurality of finishing element finishing surfacesattached to a magnetic member(s) is preferred and applying localizedpressure to the operative finishing interface with a plurality offinishing element finishing surfaces attached to a plurality of magneticmembers is more preferred.

A finishing element having discrete finishing members having at least ofa portion of its surface facing away from the workpiece being finishedspaced apart from the unitary resilient body is preferred for someapplications. FIGS. 9 a and 9 b are artist's expanded cross-sectionalview representing some preferred spaced apart embodiments and thediscrete finishing members having an interlocking mechanism with theunitary resilient body. FIG. 9 a represents an artist's cross-sectionview showing a portion cross-sectional view of the discrete finishingmember attached, more preferably fixedly attached, to the unitaryresilient body. Reference Numeral 130 represents the unitary resilientbody. Reference Numeral 140 represents the discrete finishing member andReference Numeral 142 represents the finishing surface of the discretefinishing member. Reference Numeral 143 represents the surface of thediscrete finishing member facing away from the workpiece being finishedand is often referred to herein as the backside of the discretefinishing member. Reference Numeral 700 represents an interlockingmechanism to help fixedly attach the discrete finishing member to themagnetic composite member (Reference Numeral 175). In this particularpreferred embodiment, an interlocking protrusion which extends into themagnetic composite member is shown. Also, the protrusion, in thisillustrated embodiment, extends from an integral footer on the discretefinishing member. The integral footer, as shown here, applies a variablepressure to the backside of the discrete finishing member to help reduceunwanted motion of the discrete finishing member due to shearing forcesduring finishing. The motion of the discrete finishing member duringfinishing is represented by Reference Numeral 490. The chamfersillustrated in this FIG. 9 a can aid in fixedly attaching the discretefinishing member to magnetic composite member and also ease the discretefinishing member over the “up areas” on the workpiece being finished andthus help reduce unwanted surface damage to the workpiece surface beingfinished. A physical attaching mechanism at least in part can bepreferred fixedly attachment in some finishing elements. Nonlimitingpreferred examples of a physical attaching mechanism is a frictionmechanism, an interlocking mechanism, and an interpenetrating mechanism.

A finishing element having discrete finishing members having at least ofa portion of its surface facing away from the workpiece being finishedspaced apart from the unitary resilient body is preferred for someapplications. FIG. 9 b represents an artist's cross-section view showinga portion cross-sectional view of the discrete finishing member fixedlyattached to the unitary resilient body. Reference Numeral 130 representsthe unitary resilient body. Reference Numeral 140 represents thediscrete finishing member and Reference Numeral 142 represents thefinishing surface of the discrete finishing member. Reference Numeral143 represents the surface of the discrete finishing member facing awayfrom the workpiece being finished and is often referred to herein as thebackside of the discrete finishing member. Reference Numeral 175represents a magnetic composite member which is attached to theresilient body. Reference Numeral 702 represents an interlockingmechanism to help fixedly attach the discrete finishing member to theunitary resilient body. In this particular preferred embodiment, aninterlocking protrusion which extends into the unitary resilient body isshown. Also, the protrusion, in this illustrated embodiment, extendsfrom an integral footer on the discrete finishing member. The integralfooter, as shown here, applies a variable pressure to the backside ofthe discrete finishing member to help reduce unwanted motion of thediscrete finishing member due to shearing forces during finishing. Themotion of the discrete finishing member during finishing is representedby Reference Numeral 495. The chamfers illustrated by Reference Numerals710 and 712 in this FIG. 9 b can aid in fixedly attaching the discretefinishing member to unitary resilient body. Reference Numeral 712optional chamfer on the discrete finishing member surface. The chamferillustrated by Reference Numeral 712 can ease the discrete finishingmember over the “up areas” on the workpiece being finished and thus helpreduce unwanted surface damage to the workpiece surface being finished(and stress on the discrete finishing member during finishing). Arounded edge can be used to ease the workpiece over the “up areas” toreduce unwanted surface damage. A mechanical locking mechanism can bepreferred for some finishing elements to aid fixedly attaching thediscrete finishing member to the unitary resilient body. An interlockingmechanism can be preferred for some finishing elements to aid fixedlyattaching the discrete finishing member to the unitary resilient body.An interpenetrating the unitary resilient body material with thediscrete finishing members can be preferred to improve the ruggedness ofsome magnetic finishing elements.

FIG. 9 c is an artist's cross-sectional view of one preferred embodimentof an integral magnetic finishing element. Reference Numeral 750represents the covering layer of the magnetic composite member(Reference Numeral 175). As shown, the covering layer composition canalso be the composition used for the finishing surface as represented byReference Numeral 755 (In this embodiment, a plurality of discretefinishing surfaces is illustrated). Preferred compositions and polymershave been discussed elsewhere herein. Thermoplastic elastomers arepreferred covering compositions. Two phase polymeric compositions arepreferred integral covering compositions. Thermoplastic vulcanizates(TPV) are a preferred integral covering composition. An integralcovering composition which forms a plurality of discrete finishingsurfaces is preferred. An integral covering composition which bothcovers and connects all the magnetic composite members in the magneticfinishing element is preferred. An integral covering composition whichboth forms a corrosion reducing or protecting layer for the magneticcomposite members and connects all the magnetic composite members in themagnetic finishing element is more preferred. An integral coveringcomposition which forms a corrosion protecting layer for the magneticcomposite members, connects all the magnetic composite members in themagnetic finishing element, and forms a flexible connection betweenmagnetic composite members is even more preferred. An integral coveringcomposition which both forms a corrosion protecting layer for themagnetic composite members, connects all the magnetic composite membersin the magnetic finishing element, forms a flexible connection betweencomposite members, and forms at least a portion of the magnetic elementfinishing surface is even more particularly preferred. Reference Numeral498 represents the movement for finishing surfaces. Further guidance fora preferred plurality of discrete finishing surfaces is found hereinunder discrete finishing members.

FIG. 10 a and 10 b are artist's representation cross-sections of severalpreferred embodiments of the discrete finishing members and/or magneticfinishing element finishing surfaces of this invention. The magneticmembers are not shown in these figures to simplify them. In FIGS. 10 aand 10 b, Reference Numeral 140 represents the discrete finishingmember, Reference Numeral 142 represents the discrete finishing memberfinishing surface and Reference Numeral 148 represents the discretefinishing member body. A discrete member body having a continuous phasesynthetic resin matrix in discrete finishing member is preferred. InFIG. 10 a, Reference Numeral 500 represents discrete regions ofmaterial, preferably soft organic synthetic resin, optionally havingdispersed therein abrasives, preferably abrasive particles. In FIG. 10aa, Reference Numeral 502 represents a magnified view of ReferenceNumeral 501 showing the abrasive particles (Reference Numeral 510) inthe discrete regions of soft material (Reference Numeral 500). ReferenceNumeral 510 represents the abrasive particles in the discrete regions ofmaterial in FIG. 10 a. Optional abrasive particles can be dispersed inboth the discrete regions of synthetic material and in the continuousphase of synthetic resin to advantage. Different abrasive particlesdispersed in the continuous phase of synthetic resin and in the discreteregions of synthetic material are more preferred when abrasive particlesare dispersed in both phases. A preferred discrete region of syntheticmaterial is a discrete synthetic resin particle and more preferably adiscrete soft synthetic resin particle. By adjusting the type andlocation of the abrasive particles, the finishing element finishingcharacteristics can be adjusted to advantage for the workpiece beingfinished. Reference Numeral 550 represents optional discrete finishingaids. The embodiment shown in FIG. 10 a is particularly preferredbecause the discrete abrasive regions can be finely tuned to particularfinishing needs of the semiconductor wafer while maintaining control ofthe flexibility of the discrete finishing member body. Also shown is thethickness of the discrete finishing member body (Reference Numeral 184)and the shortest distance across the discrete finishing member body(Reference Numeral 180). Control of the ratio of the shortest distanceacross in centimeters of the discrete finishing member body to thethickness in centimeters of the discrete finishing member body canimprove finishing. A ratio of the shortest distance across incentimeters of the discrete finishing member body to the thickness incentimeters of the discrete finishing member body of at least 10/1 ispreferred and a ratio of at least 20/1 is more preferred and a ratio ofat least 30/1 is even more preferred. A ratio of the shortest distanceacross in centimeters of the discrete finishing member body to thethickness in centimeters of the discrete finishing member body of from10/1 to 1000/1 is preferred and a ratio of from 20/1 to 1000/1 is morepreferred and a ratio of from 30/1 to 500/1 is even more preferred. Afinishing element having all of the discrete finishing members separatedfrom their nearest discrete finishing member neighbor by at least 1/2the thickness of the finishing member in centimeters is preferred and afinishing element having all of the discrete finishing members separatedfrom their nearest discrete finishing member neighbor by at least 1times the thickness of the finishing member in centimeters is morepreferred and a finishing element having all of the discrete finishingmembers separated from their nearest discrete finishing member neighborby at least times the thickness of the finishing member in centimetersis even more preferred. The separating distance reduces unwantedinteractions between neighboring discrete finishing members duringfinishing helping to reduce unwanted surface damage to the workpiecesurface being finished and/or the finishing element during manufacturingand shipping. A specific maximum distance of separation of the finishingelements from their nearest neighbor has yet to be determined but as thedistance becomes larger, fewer discrete finishing members are containedin the finishing element which can cause unwanted reductions infinishing rate and/or higher than necessary localized pressures. Forthis reason, a finishing element having all of the discrete finishingmembers separated from their nearest discrete finishing member neighborby from ½ to 10 the thickness of the discrete finishing member incentimeters is currently preferred and a finishing element having all ofthe discrete finishing members separated from their nearest discretefinishing member neighbor by from 1 to 6 times the thickness of thediscrete finishing member in centimeters is currently more preferred

In FIG. 10 b, Reference Numeral 601 represents a small region in adifferent discrete finishing member body which is magnified in FIG. 10bb Reference Numeral 600 to show the abrasive particles ReferenceNumeral 602. Reference Numeral 555 represents optional regions of softorganic synthetic resin and/or modifier materials. Preferably, in theembodiment shown FIG. 10 b the abrasives are dispersed in the discretefinishing member body. This prolongs the useful life of the discretefinishing member body even after conditioning of the finishing element.

Current commercial semiconductor polishing apparatus can tend to lead toa higher cost for manufacture semiconductor wafers. Current commercialpolishing equipment have multiple mechanical drives which are complex,space consuming, and expensive. No finishing apparatus is currentlyavailable which can drive, with a magnetic coupling force, multipledifferent finishing elements with multiple finishing surfaces. Thisversatility can improve finishing and lower the manufacturing cost forfinishing workpieces such as semiconductor wafers. The new finishingapparatus has a different structure and functions in a different way toaccomplish these new and useful results. Parts of the magnetic finishingelement of this invention can be generally be made on high volumeplastic processing equipment and at low cost. The new discrete finishingmembers can be generally be made with current commercial thermoplasticmaterials having low processing costs and in addition have excellenttoughness and reinforcement characteristics which help to increasefinishing element life expectancy and thus further reduce costs tofinish a semiconductor wafer. The magnetic finishing elements of thisinvention can be made with current commercial synthetic resin materialshaving broad range Shore A hardness, Shore D hardness, flexural modulus,coefficient of friction, and compressibility to customize the“responsiveness” of the finishing element finishing surface to appliedpressure and the way it urges the discrete finishing members against theworkpiece surface to effect finishing in both local and global regions.Discrete finishing surfaces and their interactions with the magneticcomposite members and optional unitary resilient body can be customizedfor improve both local planarizing and global planarizing. Discretefinishing member finishing surfaces and their interactions with themagnetic composite members along with the optional resilient memberssuch as a unitary resilient body can be designed to enhance selectivityand improve control particularly near the end-point. Still further, themagnetic finishing element can be used as a reservoir to efficiently andeffectively deliver finishing aids to the operative finishing interface.Finishing aids and/or preferred continuous phase synthetic resinmatrices can help lubricate the operative finishing interface. Higherthan needed tangential frictional forces can cause mechanical failure insome semiconductor wafers such as those having a plurality of metallayers, even more particularly when low-k dielectric layers are alsoincorporated in the semiconductor wafer structure. Differential filmlubrication and/or boundary lubrication can enhance localized finishingrates to improve the semiconductor wafer surface while helping tocontrol overall friction forces. Supply of an organic lubricating filmis preferred. A marginal amount of organic lubricating film layer orboundary lubricating layer often can help meeting a plurality of theseobjectives simultaneously. Still further, the finishing equipment can bemade with lower costs. Lubrication reduces breaking away of theoptionally preferred abrasive particles from the surface of the fixedabrasive finishing element by reducing friction forces. Localized and ormicro localized distortions to the surface of a fixed abrasive finishingelement and chatter can also occur with other finishing motionsand/elements and lubrication can reduce or eliminate these. By havingoptional discrete synthetic resin particles having abrasives dispersedin the discrete finishing members, the synthetic resin in the discretesynthetic resin particles can be further customized by adjusting suchpreferred properties as Shore A hardness (Shore D hardness), flexuralmodulus, coefficient of friction, and resilience to interact with boththe workpiece surface being finished and also the discrete finishingmember to make a very versatile, low cost manufacturing platform toproduce customized low cost fixed abrasive finishing elements. With theabove advantages, the new magnetic finishing elements can be customizedand made on low cost, highly efficient manufacturing equipment toproduce high performance, unique versatile fixed abrasive finishingelements. The magnetic finishing elements of this invention can improvethe yield and lower the cost of finishing semiconductor wafer surfaces.Still further preferred embodiments are described elsewhere herein. Themagnetic composite member(s), resilient body members, and the magneticfinishing element finishing surface interact and cooperate in a new anduseful way to improve finishing.

By providing a magnetically responsive finishing element free of anyphysically connected movement mechanism, finishing apparatus cangenerally be made at lower cost. By providing a magnetic driving meansfor magnetically responsive finishing elements free of any nonmagneticdriving mechanism, parallel operative finishing motions with the newmagnetic finishing apparatus can generally be more efficient, effective,and versatile than prior known finishing apparatus and methods. In apreferred mode, operative finishing motion of the workpiece can be freeof circular motion. By providing a preferred lubricant to reduce thefriction in the operative finishing interface, the coefficient offriction can be reduced and better controlled with preferred controlsubsystems as taught herein.

The new problem recognition and unique solution are new and consideredpart of this current invention.

Magnetic Refining Element

Preferred magnetically responsive refining and finishing elements havebeen described in the Figures herein. A cohesive finishing element is apreferred illustrative example. A preferred finishing element of thisinvention have at least two different layers, one layer having afinishing surface and one layer comprising a layer or material capableof magnetic coupling. A preferred finishing element of this inventionhave regions having at least two different layers, one layer having aplurality of discrete finishing surfaces and one layer comprising alayer capable of magnetic coupling. Optional discrete finishing memberscan comprise at least a portion of the finishing surface. An optionalresilient body member, preferably a unitary resilient body member, cancomprise a continuous layer throughout the finishing element or discretelayers in the magnetic finishing element. The discrete finishing memberspreferably are uniformly shaped. A rectangle is a preferred uniformshape. A circle is a preferred uniform shape. An oval is a preferreduniform shape. An hexagon shape is a preferred uniform shape. A shapecombining elements of an oval and a rectanglar shape is a preferreduniform shape. The discrete finishing member can be arranged randomly orin a pattern on the unitary resilient body. Each discrete finishingmember is preferably spaced apart from its nearest discrete finishingmember neighbor. In other words, a finishing element having eachdiscrete finishing member separated from its nearest discrete finishingmember neighbor is generally preferred. Still in other words, afinishing element having each discrete finishing member spaced apartfrom and free of contact with its nearest discrete finishing memberneighbor is generally preferred. In other words, the discrete finishingmembers are generally separated in space from their nearest discretefinishing member neighbors. This spacing apart facilitates preferreddiscrete finishing member motion during finishing.

The finishing surface is attached to the magnetic composite member. Thefinishing surface can optionally be replaced. As an illustrativeexample, the finishing surface can be bonded to the magnetic compositemember with adhesive. The adhesive can be soluble in a solvent orchemical solution which is not used for finishing. In anotherembodiment, the bonding is temperature sensitive such that changing thetemperature weaken the adhesive outside of the finishing temperaturesuch as at higher temperatures can be used. The finishing surface can bemechanically attached (directly or indirectly) to the magnetic compositemember and/or layer (or magnetic responsive member or layer). Atemporary attachment can be preferred for some finishing operations. Atemporary mechanical attachment is a preferred temporary attachment. Atemporary mechanical attachment can be preferred for some types offinishing apparatus. Examples of a temporary mechanical attachment are asnap fit, friction fit, threaded mechanism, and cam locking mechanism. Apermanent mechanical attachment can be preferred for some types offinishing apparatus. The finishing surface can be mechanically attachedto the magnetic composite member and/or layer. A temporary mechanicalconnection can be preferred for some types of finishing apparatus. Apermanent mechanical connection can be preferred for some types offinishing apparatus.

Optionally, the discrete finishing member is preferably fixedly attacheddirectly or indirectly to magnetic composite member(s). By this is meantthat the discrete finishing member is fixedly attached directly orindirectly to the magnetic composite member at the finishing conditionsused (such as chemistry and temperature used). Bonding can be apreferred means of fixed attachment. Thermal bonding is a preferred formof bonding. Adhesive bonding is a preferred means of bonding. A discretefinishing member which is fixedly attached to the magnetic compositemember and which is physically separated resulting in cohesive failurein the unitary resilient body is very preferred. A discrete finishingmember which is fixedly attached to the magnetic composite member andwhich is physically separated resulting in a separation which is free ofadhesive failure is particularly preferred. Preferred means for fixedlyattaching the discrete finishing member to the magnetic composite memberinclude the formation of chemical bonds and more preferably covalentchemical bonds. Another preferred means for fixedly attaching thediscrete finishing member to the magnetic composite member include thepolymer chain interdiffusion. A combination of polymer chaininterdiffusion bonding and covalent chemical bonds are particularlypreferred. A PSA (pressure sensitive adhesive) is a preferred adhesive.A waterproof PSA is a more preferred adhesive. An acrylic PSA is apreferred PSA. Thermoset adhesive can be preferred. Solvent basedadhesives can be effective. Phenolic and polyurethane adhesives can beuseful. A preferred group of adhesives having at least a portion oftheir formulation consisting of organic materials selected from thegroup consisting of unsaturated polyesters polymers, epoxy polymers,acrylic polymers, and polychloroprene polymers. Reactive polymers arepreferred adhesives. Polyurethane and phenolic adhesives are generallyknown to those skilled in the art. Reactive polymers having a reactiveoxygen function group is preferred. Polymers having a reactivefunctional group having a sulfur atom is a preferred functional group.Reactive silicones, titanates, and zirconates can be preferredfunctional groups. Epoxy functional groups, anhydride functional groups,carboxylic acid functional groups, alcoholic functional groups, andphenolic functional groups are preferred examples of reactive oxygenfunctional groups. Adhesives are generally available commercially andknown to those skilled in art. Using an activating surface treatment canaid bonding and attachment. A nonlimiting example of an activatingsurface treatment is a plasma treatment. Commercial plasma treatment andplasma treatment equipment is available. Another nonlimiting example ofan activating surface treatment is reactive chemical treatment such as awet chemical etch or a flame treatment. Currently a plasma treatment isparticularly preferred. A reactive surface treatment can facilitatefixedly attaching the discrete finishing members to the unitaryresilient body. A reactive surface treatment can facilitate fixedlyattaching the members into one magnetic finishing element. MetroLine/IPCin Marlton, N.J. is a nonlimiting example company. Use of recesses canalso improve the strength of the attachment of the discrete finishingmembers to the connecting material (see for instance, FIG. 7 c,Reference Numeral 680). Discrete finishing members and/or finishingsurfaces which are attached, more preferably fixedly attached, to themagnetic composite member in a manner that resists separation duringoperative finishing motion is preferred. Discrete finishing membersand/or finishing surfaces which are connected, more preferably fixedlyattached, directly and/or indirectly to the magnetic composite member ina manner that prevents separation during operative finishing motion isparticularly preferred. Discrete finishing members and/or a finishingsurface which come lose during operative finishing motion can damage theworkpiece surface being finished.

Failure of the connection, more preferably fixed attachment, of thediscrete finishing member (and or finishing surface) to the magneticcomposite member during finishing can cause catastrophic damage to theexpensive semiconductor wafer(s) being polishing and therefore fixedattachment is very preferred. Generally one semiconductor wafer has adollar value much higher than a finishing element. Thus fixedlyattaching the magnetic finishing element finishing surface to themagnetic composite member is one of the most preferred embodiments.Attachment of the magnetic member, preferably magnetic composite member,during finishing is preferred. A mechanical attachment can be apreferred attachment. An adhesive attachment can be a preferredattachment.

Discrete finishing surfaces can be effected with the coating or coveringlayer on the magnetic composite members. Discrete finishing surfaces canalso be added with separate discrete finishing members having adifferent chemical composition than the coating or covering layer on themagnetic composite members. These structures can be formed by differenttechniques such as injection molding, injection over molding,co-injection molding, and co-molding.

Magnetic Composite Member

The magnetic composite member contains a composition which is capable ofmagnetic attraction. A ferromagnetic material is a preferred ingredient.A paramagnetic material is a preferred ingredient. A magnetic metal is apreferred ingredient. The magnetic materials can be in many shapes andforms. A magnetic metal salt is a preferred ingredient. Rare earthelements having an atomic number from 58 (Ce) to 71 (Lu) are preferredingredients. A magnetic composite member comprising a plurality of metalatoms is preferred. A magnetic composite member comprising a multiphasemagnetic composite or system is especially preferred. A magneticcomposite member comprising a magnetically responsive alloy or compoundis especially preferred. The magnetic materials can be rods, plates,and/or particles. The magnetic particles may be bound to each otherthrough such process as sintering or adhesives. The magnetic particlescan be mixed with a polymeric material(s) and binders. A thermoplasticmaterial is a preferred polymeric material. A thermoset material is apreferred polymeric material. A magnetic finishing member having aplurality magnetic poles is preferred.

Optionally and preferably, any material which can corrode or otherwisecontaminate the finishing process is coated with a protective coating.Optionally and preferably, any material which can corrode or otherwisecontaminate the finishing process is covered with a protective layer.Polymers are a preferred protective layer and/or protective coating.Protective coatings and layers are generally known to those skilled inthe art. Illustrative nonlimiting examples include epoxies,polyurethanes, polyolefins, and halocarbons such chlorocarbons andfluorocarbons. Protective layers and protective coating are free of anycontaminants which will degrade the performance of the semiconductorwafers are preferred. Corrosion products and free contaminants canseriously adversely affect the semiconductor production yields.

U.S. Pat. Nos. 5,464,670 to Ikuma et al., 5,470,400 to Bogatin et al.,5,567,746 to Gay, and 5,932,134 to Christ et al. comprise illustrativenonlimiting examples of types of magnetic composite members and otheruseful information and each is contained by reference in their entiretyfor teaching and guidance herein and can be adapted for new magneticallyapplied finishing motions and are thus given for general guidance forthose skilled in the arts.

Additional generally useful polymers are included herein in othersections.

Optional Unitary Resilient Body

The unitary resilient body forms a continuous layer in the finishingelement. A plurality of discrete resilient members can also be used. Theresilient member forms a flexible member allowing limited motion of thediscrete finishing members during the finishing operation. Preferredlimited motion is represented by Reference Numerals 450, 460, and 470 inFIGS. 7 a, 7 b, and 7 c respectively. The limited motion is influencedby the magnetic force applied between the unitary resilient body and thediscrete finishing members along with any third layer members.Properties of the unitary resilient body which are preferably controlledinclude the hardness of the unitary resilient body, the flexural modulusof the unitary resilient body, and the compression set of the unitaryresilient body. The limited motion urges the discrete finishing membersagainst the workpiece surface in local areas (in operative finishingcontact with the discrete finishing members) while facilitating globalflexibility in the finishing element (such as at the areas in betweenthe discrete finishing members shown in FIG. 7 b in Reference Numeral400. In finishing elements having three layers such as shown in FIGS. 7b and 7 c, the unitary flexible body also forms a cooperative laminateconstruction which can stiffen the localized regions having the discretefinishing members.

A unitary resilient body comprising an elastomer is preferred. Apreferred elastomer is a thermoset elastomer. Another preferredelastomer is a thermoplastic elastomer. A preferred synthetic resin is apolyolefin elastomer. Some particularly preferred elastomers includesynthetic resins selected from the group consisting of polyurethanes,acrylics, acrylates, polyamides, polyesters, chloroprene rubbers,ethylene propylene polymers, butyl polymers, polybutadienes,polyisoprenes, EPDM elastomers, and styrene butadiene elastomers.Thermoplastic elastomers can have preferred processing characteristics.Polyolefin elastomers can be preferred for their generally low cost. Across-linked elastomer can have improved thermoset properties and alsochemical resistant and thus can be preferred. A thermoplasticvulcanizate comprises a preferred composition. A multiphasethermoplastic elastomer comprises a preferred composition and amultiphase thermoplastic elastomer having a compatibilizing agent iseven more preferred. A thermoplastic elastomer composition which hasbeen crosslinked after shaping can also be preferred. A foamed elastomercan improve resilience and reduce material costs and thus can be apreferred for certain applications. Elastomers are generally availablecommercially from a number of major chemical companies. Polyurethanesare preferred for the inherent flexibility in formulations. A continuousphase synthetic resin matrix comprising a foamed synthetic resin matrixis particularly preferred because of its flexibility and ability totransport the finishing composition. A finishing element comprising afoamed polyurethane polymer is particularly preferred. Foamedpolyurethane has desirable abrasion resistance combined with good costs.Foaming agents and processes to foam organic synthetic polymers aregenerally known in the art. A cross-linked continuous phase syntheticresin matrix is preferred for its generally enhanced thermal resistance.A finishing element comprising a compressible porous material ispreferred and comprising organic synthetic polymer of a compressibleporous material is more preferred.

Foamed sheets of elastomers suitable for some preferred embodiments ofthe invention are available from commercially Rodel in Newark, Del. andFreundenberg in Lowell, Mass. Refining surface, discrete refiningsurfaces, and discrete refining member A refining element having arefining surface is preferred. A refining element having a plurality ofdiscrete refining surfaces is more preferred. A finishing element havinga finishing surface is preferred. A finishing element having a pluralityof discrete finishing surfaces is more preferred. An abrasive finishingis preferred for some finishing. A non-abrasive finishing surface can bepreferred for particularly delicate finishing. A discrete refining orfinishing member surface can be a preferred discrete refining orfinishing surface.

An abrasive finishing surface is preferred for some finishing. Anabrasive finishing surface having a continuous phase synthetic resinmatrix is preferred. An abrasive discrete finishing member having asingle continuous phase of synthetic resin matrix extending across thelength of the discrete finishing member is more preferred. An abrasivediscrete finishing member having a single continuous phase of syntheticresin matrix extending across the length and width of the discretefinishing member is even more preferred. This continuous phase syntheticresin matrix can form a binding resin which optionally (and preferably)fixes the discrete synthetic resin particles which in turn optionally(and preferably) have the abrasive particles therein. A continuous phasesynthetic resin matrix comprising at least one material selected fromthe group consisting of an organic synthetic polymer, an inorganicpolymer, and combinations thereof is preferred. A preferred example oforganic synthetic polymer is a thermoplastic polymer. Another preferredexample of an organic synthetic polymer is a thermoset polymer. A solidcontinuous phase of synthetic resin matrix is a preferred construction.A foamed continuous phase of synthetic resin can also be a preferredconstruction. A discrete finishing member can have a plurality oflayers. For instance, a discrete finishing member can have an abrasivefinishing surface fixedly attached to a discrete stiffening layer togive the discrete finishing member a high flexural modulus. The discretestiffening layer preferably is substantially the same shape and size asthe discrete finishing member finishing surface. When discretestiffening layer has a stiffening additive such as inorganic fibers (forinstance, glass fibers) capable of causing unwanted surface damage tothe workpiece, then the discrete stiffening layer is preferably remotefrom the workpiece surface being finished during finishing.

The ratio of the area in square centimeters of the surface of thediscrete finishing surface to the area in square centimeters of thesurface of the semiconductor die being finished can give useful guidancefor finishing improvements. Each discrete finishing surface having asurface area of less than the surface area of the semiconductor waferbeing finished is preferred. Each discrete finishing surface having asurface area of less than the surface area of the semiconductor waferbeing finished and at least the surface area of the die being finishedis more preferred. A ratio of the area of the surface of the discreterefining surface(s) (such as the finishing surface of a discretefinishing member) to area of the die of at least 1/1 is preferred and ofat least 2/1 is more preferred and of at least 3/1 is even morepreferred and of at least 4/1 is even more particularly preferred. Aratio of the area of the surface of the discrete refining surfaces toarea of the die of from 1/1 to 20/1 is preferred and of from 2/1 to 15/1is more preferred and of from 3/1 to 10/1 is even more preferred and offrom 4/1 to 10/1 is even more preferred. A ratio of the area of thesurface of the discrete finishing surfaces to area of the die of atleast 1/1 is preferred and of at least 2/1 is more preferred and of atleast 3/1 is even more preferred and of at least 4/1 is even moreparticularly preferred. A ratio of the area of the surface of thediscrete finishing surfaces to area of the die of from 1/1 to 20/1 ispreferred and of from 2/1 to 15/1 is more preferred and of from 3/1 to10/1 is even more preferred and of from 4/1 to 10/1 is even morepreferred. These ratios tend to optimize the cooperative motionsdiscussed in relation to FIGS. 7 a, 7 b, and 7 c. A discrete finishingsurface having a surface area sufficient to simultaneously cover atleast two regions of high device integration during finishing of thesemiconductor wafer is preferred and a surface area sufficient tosimultaneously cover at least five regions of high device integrationduring finishing of the semiconductor wafer is more preferred and asurface area sufficient to simultaneously cover at least ten regions ofhigh device integration during finishing of the semiconductor wafer iseven more preferred. A refining surface, preferably discrete refiningsurface, having a surface area sufficient to simultaneously cover from 2to 100 regions of high device integration during refining of thesemiconductor wafer is preferred and a surface area sufficient tosimultaneously cover 2 to 50 regions of high device integration duringrefining of the semiconductor wafer is more preferred and a surface areasufficient to simultaneously cover from 5 to 50 regions of high deviceintegration during refining of the semiconductor wafer is even morepreferred. A refining surface, preferably a discrete refining surface,having a surface area sufficient to simultaneously cover from 2 to 100regions of high pattern density during refining of the semiconductorwafer is preferred and a surface area sufficient to simultaneously cover2 to 50 regions of high pattern density during refining of thesemiconductor wafer is more preferred and a surface area sufficient tosimultaneously cover from 5 to 50 regions of high pattern density duringrefining of the semiconductor wafer is even more preferred. A discretefinishing surface, preferably discrete finishing surface, having asurface area sufficient to simultaneously cover from 2 to 100 regions ofhigh device integration during finishing of the semiconductor wafer ispreferred and a surface area sufficient to simultaneously cover 2 to 50regions of high device integration during finishing of the semiconductorwafer is more preferred and a surface area sufficient to simultaneouslycover from 5 to 50 regions of high device integration during finishingof the semiconductor wafer is even more preferred. A discrete finishingsurface having a surface area sufficient to simultaneously cover from 2to 100 regions of high pattern density during finishing of thesemiconductor wafer is preferred and a surface area sufficient tosimultaneously cover 2 to 50 regions of high pattern density duringfinishing of the semiconductor wafer is more preferred and a surfacearea sufficient to simultaneously cover from 5 to 50 regions of highpattern density during finishing of the semiconductor wafer is even morepreferred. A line pattern density and a oxide pattern density arepreferred types of pattern density. The size of the preferred discretefinishing surface is also dependent on the specific design and layout ofthe die and the wafer but applicant believes that the above ratios willserve as helpful general guidance.

A fixed abrasive finishing member surface layer having discretesynthetic resin particles dispersed throughout at least a portion of itsthickness, such that if some of the surface is removed additionaldiscrete synthetic resin particles are exposed on the newly exposedsurface is preferred. A finishing member surface having a threedimensional dispersion of discrete synthetic resin particles isparticularly preferred. A fixed abrasive discrete finishing surfacehaving a plurality of discrete synthetic resin particles substantiallyuniformly dispersed throughout at least a portion of its thickness ismore preferred. A fixed abrasive discrete finishing surface having aplurality of discrete synthetic resin particles uniformly dispersedthroughout at least a portion of the member's thickness and wherein thediscrete synthetic resin particles have abrasive particles dispersedtherein is even more preferred. Having a discrete finishing surfacehaving a three dimensional dispersion of discrete synthetic resinparticles can facilitate renewal of the finishing surface duringfinishing element conditioning. During finishing of a workpiece, it ispreferred that a discrete finishing surface having a three dimensionaldiscrete synthetic resin particles is substantially uniform over thedepth the finishing surface used. Any nonuniform surface formed duringmanufacture due to the processing and/or forming conditions whenmanufacturing the discrete finishing surfaces is preferably removedprior to finishing of the workpiece surface. A thin nonuniform layer canbe removed by cutting the unwanted nonuniform layer off. A thinnonuniform layer can be removed by abrasive means. A nonuniform skin canbe formed by settling due to density differences of the componentsand/or due to specific shear conditions or surface interactions with amolding or forming surface.

Organic synthetic resins having a high flexural modulus are known. Athermoplastic resins is a preferred organic synthetic resin. Athermoplastic polymer is a preferred organic synthetic resin.Thermoplastic synthetic resins and polymers can be formed by manypreferred methods such as injection molding and extrusion. Thermoplasticsynthetic resins can be formed by many preferred methods such asinjection molding and extrusion. Thermoset synthetic resins are also aorganic synthetic resin. Thermoset synthetic resins can be molded atlower viscosity which can have advantages and are can be formed intoshapes by reaction injection molding and casting. Nylons are a preferredorganic synthetic resin. Nylons are tough, relatively stiff, abrasionresistant and cost effective. Polyesters are a preferred organicsynthetic resin. Polyesters are tough, relatively stiff and costeffective. Liquid crystal polymers are a preferred organic syntheticresin. Liquid crystal polymers can be particularly stiff and can beabrasion resistant. Polyolefins are a preferred organic synthetic resin.An organic synthetic resin selected from the group consisting ofpolyamides, polyesters, polystyrenes, polycarbonates, polyimides areexamples of preferred organic synthetic resins. Polymer blends oforganic synthetic resins are also preferred because they can beparticularly tough and abrasion resistant. Polyolefin polymers areparticularly preferred for their generally low cost. A preferredpolyolefin polymer is polyethylene. Another preferred polyolefin polymeris a propylene polymer. High density polyethylene and ultra highmolecular weight polyethylene are preferred ingredients in thecontinuous phase synthetic resin matrix because they are low cost,thermoplastically processable and have a low coefficient of friction. Across-linked polyolefin, even more preferably cross-linked polyethylene,can be especially preferred continuous phase synthetic resin matrix.Another preferred polyolefin polymer is an ethylene propylene copolymer.Preferred synthetic resins include epoxy organic synthetic resins,polyurethane synthetic resins, and phenolic synthetic resins. Organicsynthetic resins selected from the group consisting of polysulfone,polyphenylene sulfide, and polyphenylene oxide are also a preferred. Asyndiotactic polystyrene is a preferred continuous phase syntheticresin. They have a good balance of stiffness and resistance to acids,bases, and/or both acids and bases. Organic synthetic resins which canbe reaction injection molded are preferred resins. An example of areaction injection moldable organic synthetic resin is polyurethane.Copolymer organic synthetic polymers are also preferred. Organicsynthetic resins having reactive function group(s) can be preferred forsome composite structures because it these can improve bonding betweendifferent materials and or members. Some preferred reactive functionalgroups include reactive functional groups containing oxygen and reactivefunctional groups containing nitrogen. Organic synthetic resins havingpolar functional groups can also be preferred.

Mixing technology to disperse the various preferred materials in apreferred continuous phase synthetic resin matrix is generally wellknown to those skilled in the mixing arts. Thermoset discrete syntheticresin particles is one example of preferred material additive.Cross-linked discrete synthetic resin particles is an example of apreferred material. Synthetic resin fibers can be a preferred materialfor incorporation. Preferred abrasive particles discussed herein belowis an example a preferred material. Mixing an organic synthetic polymermodifier, preferably a soft organic synthetic resin, into the highflexural modulus organic synthetic resin is preferred and melt mixingthe organic synthetic polymer modifier, preferably a soft organicsynthetic resin, into the high flexural modulus organic synthetic resinis more preferred and melt mixing with shear mixing conditions the anorganic synthetic polymer modifier, preferably a soft organic syntheticresin, into the high flexural modulus organic synthetic resin is evenmore preferred. Mixing an organic synthetic polymer modifier, preferablya soft organic synthetic resin, into the high flexural modulus organicsynthetic resin along with a compatibilizing agent is preferred andalong with reactive compatibilizing agent is more preferred and alongwith a chemically reactive compatibilizing agent is even more preferred.Example compatibilizing agents and commercial sources are discussedherein. Single and twin screw extruders are commonly used for manythermoplastic mixing operations. High shear mixing such as often foundin twin screw is generally desirable. Hoppers and ports to feed multipleingredients are generally well known in the art. The ingredients can beadded in a feed hopper or optionally mixed in the melt using generallywell known feed ports. Commercial suppliers of mixing equipment forplastic materials are well known to those skilled in the art.Illustrative nonlimiting examples of mixing equipment suppliers includeBuss (America), Inc., Berstorff Corporation, Krupp Werner & Pfleiderer,and Farrel Corporation.

Mixing technology to disperse the various preferred materials in thecontinuous phase synthetic resin matrix is generally well known to thoseskilled in the mixing arts. Thermoset discrete synthetic resin particlesis one example of preferred material additive. Cross-linked discretesynthetic resin particles is an example of a preferred material.Synthetic resin fibers can be a preferred material for incorporation.Preferred abrasive particles discussed herein below is an example apreferred material. Abrasive particles can be included in a firstsynthetic resin and then the first synthetic resin having abrasiveparticles can then be dispersed in a continuous matrix of syntheticresin with secondary mixing. A high flexural modulus organic syntheticresin, preferably a stiff organic synthetic resin, substantially free ofabrasive particles is preferred and a high flexural modulus organicsynthetic resin, preferably a stiff organic synthetic resin, free ofabrasive particles is more preferred. A high flexural modulus organicsynthetic resin, preferably a stiff organic synthetic resin, one type ofabrasive particles and the soft synthetic resin particles having anothertype of abrasive particles can be preferred for some workpiecefinishing. Reactive polymer systems mixing can be mixed, particularlypreferable are high shear mixing equipment. Functionalized elastomersand functionalized rubbers can be dispersed in organic synthetic resinmatrices. Single and twin screw extruders are commonly used for manythermoplastic mixing operations. High shear mixing such as often foundin twin screw is generally desirable. Hoppers and ports to feed multipleingredients are generally well known in the art. The ingredients can beadded in a feed hopper or optionally mixed in the melt using generallywell known feed ports. Commercial suppliers of mixing equipment forplastic materials are well known to those skilled in the art.Illustrative nonlimiting examples of mixing equipment suppliers includeBuss (America), Inc., Berstorff Corporation, Krupp Werner & Pfleiderer,and Farrel Corporation. Illustrative nonlimiting examples of mixingtechnology, blended organic synthetic resin matrices, and functionalizedmodifiers are found in EP 0 759 949 B1 to Luise, U.S. Pat. No. 5,332,782to Liu et al., U.S. Pat. No. 4,404,317 to Epstein, U.S. Pat. No.5,112,908 to Epstein, U.S. Pat. No. 5,376,712 to Nakajima, U.S. Pat. No.5,403,887 to Kihira et al., U.S. Pat. No. 5,508,338 to Cottis et al.,U.S. Pat. No. 5,610,223 to Mason, and U.S. Pat. No. 5,814,384 toAkkapeddi et. al. and are included herein in their entirety for generalguidance and modification by those skilled in the art.

Synthetic resin polymers of the above descriptions are generallyavailable commercially. Illustrative nonlimiting examples of commercialsuppliers of useful organic synthetic polymers include Exxon Co., DowChemical, Sumitomo Chemical Company, Inc., DuPont Dow Elastomers, Bayer,and BASF.

Preferred Abrasive Surfaces—Further Comments

An abrasive three dimensional refining surface is preferred. An abrasivethree dimensional abrasive discrete finishing member is a preferredabrasive three dimensional refining surface. The abrasive particles arepreferably attached to a synthetic resin. Abrasive particles which arebonded to adjacent synthetic organic synthetic resin is more preferred.One or more bonding agents can be used. Illustrative nonlimitingexamples of abrasive particles in the discrete synthetic resin particlescomprise silica, silicon nitride, alumina, and ceria. Fumed silica isparticularly preferred. A metal oxide is a type of preferred abrasiveparticle. A particularly preferred particulate abrasive is an abrasiveselected from the group consisting of iron (III) oxide, iron (II) oxide,magnesium oxide, barium carbonate, calcium carbonate, manganese dioxide,silicon dioxide, cerium dioxide, cerium oxide, chromium (III) trioxide,and aluminum trioxide. Abrasive particles having an average diameter ofless than 0.5 micrometers are preferred and less than 0.3 micrometer aremore preferred and less than 0.1 micrometer are even more preferred andless than 0.05 micrometers are even more particularly preferred.Abrasive particles having an average diameter of from 0.5 to 0.01micrometer are preferred and between 0.3 to 0.01 micrometer are morepreferred and between 0.1 to 0.01 micrometer are even more preferred.These abrasive particles are currently believed particularly effectivein finishing semiconductor wafer surfaces. Smaller abrasive particlescan be preferred in the future as feature sizes decrease.

Abrasive particles having a different composition from the finishingelement body are preferred. An abrasive particle having a Knoop hardnessof less than diamond is particularly preferred to reduce microscratcheson workpiece surface being finished and a Knoop hardness of less than 50GPa is more particularly preferred and a Knoop hardness of less than 40GPa is even more particularly preferred and a Knoop hardness of lessthan 35 GPa is especially particularly preferred. An abrasive particlehaving a Knoop hardness of at least 1.5 GPa is preferred and having aKnoop hardness of at least 2 is preferred. An abrasive particle having aKnoop hardness of from 1.5 to 50 GPa is preferred and having a Knoophardness of from 2 to 40 GPa is preferred and having a Knoop hardness offrom 2 to 30 GPa is even more preferred. A fixed abrasive finishingelement having a plurality of abrasive particles having at least twodifferent Knoop hardnesses can be preferred. An abrasive finishingelement having abrasive asperities on the finishing element finishingsurface is preferred. An abrasive refining element having abrasiveasperities having a height from 0.5 to 0.005 micrometers is preferredand an abrasive refining element having abrasive asperities having aheight from 0.3 to 0.005 micrometers is more preferred and an abrasiverefining element having abrasive asperities having a height from 0.1 to0.01 micrometers is even more preferred and an abrasive refining elementhaving abrasive asperities having a height from 0.05 to 0.005micrometers is more particularly preferred. An abrasive finishingelement having abrasive asperities having a height from 0.5 to 0.005micrometers is preferred and an abrasive finishing element havingabrasive asperities having a height from 0.3 to 0.005 micrometers ismore preferred and an abrasive finishing element having abrasiveasperities having a height from 0.1 to 0.01 micrometers is even morepreferred and an abrasive finishing element having abrasive asperitieshaving a height from 0.05 to 0.005 micrometers is more particularlypreferred. The asperities are preferably firmly attached to thefinishing element finishing surface and asperities which are an integralpart of the finishing element finishing surface are more preferred. Anabrasive finishing element having small asperities can finish aworkpiece surface to fine tolerances.

For refining or finishing of semiconductor wafers having low-kdielectric layers, finishing aids, more preferably lubricating aids, arepreferred. Illustrative nonlimiting examples of low-k dielectrics arelow-k polymeric materials, low-k porous materials, and low-k foammaterials. Some further examples of preferred low-k dielectric materialsare aerogels, xerogels, parylene, fluorocarbons, polyaromatic polymers,and polyaromatic ether polymers. As used herein, a low-k dielectric hasat most a k range of less than 3.5 and more preferably less than 3.0.Illustrative examples include doped oxides, organic polymers, highlyfluorinated organic polymers, and porous materials. A high flexuralmodulus organic synthetic resin comprising an engineering polymer isalso preferred. A high flexural modulus organic synthetic resincontaining even higher modulus organic synthetic resin particles canalso be preferred for finishing some sensitive low-k materials. Anillustrative example of the manufacture of a tough high flexural modulussynthetic resin containing an even higher modulus organic syntheticresin particles is found in U.S. Pat. No. 5,508,338 to Cottis et al. Asused herein, even higher flexural modulus organic synthetic resinparticles than the continuous region of high flexural modulus organicsynthetic resin are referred in this specification as abrasive organicsynthetic resin particles. A discrete finishing member having discreteabrasive organic synthetic resin particles is preferred for some low-kdielectric layer finishing. Abrasive organic synthetic resin particleshaving a flexural modulus of at most 100 times higher than the low-kdielectric layer flexural modulus is preferred and having a flexuralmodulus of at most 50 times higher than the low-k dielectric layerflexural modulus is more preferred and having a flexural modulus of atmost 25 times higher than the low-k dielectric layer flexural modulus iseven more preferred. Abrasive organic synthetic resin particles having aflexural modulus of at least equal to the low-k dielectric layerflexural modulus is preferred and having a flexural modulus of at least2 times higher than the low-k dielectric layer flexural modulus is morepreferred. Flexural modulus is believed to be useful for guidance to aidinitial screenings. Abrasive synthetic resin particles can help toreduce unwanted surface damage of the low-dielectric layer.

A discrete synthetic resin particle having a three dimensionaldispersion of abrasive particles as used herein is a discrete syntheticresin particle having abrasive particles dispersed in the discretesynthetic resin particle, such that if some of the surface is removedadditional abrasive particles are exposed on the newly exposed surface.A three dimensional abrasive discrete synthetic resin particle is apreferred means for incorporating abrasive particles in the discretefinishing member. A three dimensional abrasive discrete synthetic resinparticle having a plurality of abrasive particles substantiallydispersed throughout at least a portion of its volume is more preferred.A three dimensional abrasive discrete synthetic resin particle having aplurality of abrasive particles substantially uniformly dispersedthroughout at least a portion of its volume is more preferred. A threedimensional abrasive discrete synthetic resin particle having aplurality of abrasive particles uniformly dispersed throughout at leasta portion of its volume is even more preferred. Having a threedimensional abrasive discrete synthetic resin particle can facilitaterenewal of the finishing surface during finishing element conditioning.

Discrete synthetic resin particles having abrasive particles dispersedtherein can be made by generally known procedures to those skilled inthe abrasive arts. For example, an abrasive slurry can be formed bymixing thoroughly 10 parts of trimethanolpropane triacrylate, 30 partsof hexanediol diacrylate, 60 of parts alkl benzyl phthalate plasticizer,6.6 parts of isopropyl triisostearoly titanate, 93.2 parts of2,4,6-trimethylbenzoyl-diphenyl-phosphine oxide photoiniatator and thenmixing in 170 parts of cerium oxide followed by mixing in a further 90parts of calcium carbonate and then curing in a thin sheets. The curedsheets are then ground into discrete synthetic resin particles havingabrasive particles therein. As a second and currently preferred example,to a monomer phase of a synthetic resin having a reactive functionalgroup(s) is added a second linking monomer which in turn has a both alinking functional group and a particulate bonding group. The linkingfunctional group is selected to covalently bond to the synthetic resinreactive functional group. The abrasive particle bonding group isselected to covalently bond with the abrasive particles such as silica.An example of a linking monomer is alkyl group with from 8-20 carbonatoms and having a carboxylic linking functional group and atrichlorosilane abrasive particle bonding group. Additional preferred,non limiting examples of useful bonding groups include carboxylic acidgroups, epoxy groups, and anhydride groups. Additional nonlimitinginformation on the formation of synthetic resin matrices having abrasiveparticles dispersed and/or bound therein include U.S. Pat. Nos.5,624,303 to Robinson, 5,692,950 to Rutherford et. al., and 5,823,855 toRobinson et. al. and are included herein by reference in their entiretyfor guidance and modification as appropriate by those skilled in theart. Synthetic matrices having dispersed abrasive particles can beformed into discrete synthetic resin particles having dispersed abrasiveparticles by using grinding technology generally known to those skilledin the art. Cold grinding is sometimes helpful. Cryogenic grinding canalso be useful. Methods to sort by size are generally known andpreferable. Further, the discrete synthetic resin particles arepreferably cleaned before use. Washing using generally known solventsand/or reagents can also be useful.

Optional Stabilizing Fillers in Refining Elements

A fibrous filler is a preferred stabilizing filler for the syntheticresins of this invention. A fibrous filler is a particularly preferredadditive to the synthetic resin of the continuous phase synthetic resinmatrix in the finishing element surface and also in the synthetic resinof the subsurface layer. A plurality of synthetic fibers areparticularly preferred fibrous fillers. Fibrous fillers tend to helpgenerate a lower abrasion coefficient and/or stabilize the finishingmember finishing surface from excessive wear. By reducing wear thefinishing element has improved stability during finishing.

A preferred stabilizing filler is a dispersion of fibrous fillermaterial dispersed in the finishing element body. An organic syntheticresin fibers are a preferred fibrous filler. Preferred fibrous fillersinclude fibers selected from the group consisting of aramid fibers,polyester fibers, and polyamide fibers. Preferably the fibers have afiber diameter of from 1 to 15 microns and more preferably, from 1 to 8microns. Preferably the fibers have a length of less than 1 cm and morepreferably a length from 0.1 to 0.6 cm and even more preferably a lengthfrom 0.1 to 0.3 cm. Particularly preferred are short organic syntheticresin fibers that can be dispersed in the discrete finishing member andmore preferably mechanically dispersed in at least a portion of thediscrete finishing member and more preferably, substantially uniformlydispersed in at least a portion of the discrete finishing memberproximate the finishing member finishing surface and even morepreferably uniformly dispersed in at least a portion of the discretefinishing member proximate the discrete finishing member finishingsurface. The short organic synthetic fibers are added in the form ofshort fibers substantially free of entanglement and dispersed in thediscrete finishing member matrix. Preferably, the short organicsynthetic fibers comprise fibers of at most 0.6 cm long and morepreferably 0.3 cm long. An aromatic polyamide fiber is particularlypreferred. Aromatic polyamide fibers are available under the tradenamesof “Kevlar” from DuPont in Wilmington, Del. and “Teijin Cornex” fromTeijin Co. Ltd. The organic synthetic resin fibers can be dispersed inan organic polymer by methods generally known to those skilled in theart. As a nonlimiting example, the cut fibers can be dispersed in athermoplastic discrete synthetic resin particles of under 20 mesh,dried, and then compounded in a twin screw, counter rotating extruder toform extruded pellets having a size of from 0.2-0.3 cm. After extrusion,optionally, the pellets can be water cooled, as appropriate. These newlyformed thermoplastic pellets having substantially uniform discrete,dispersed, and unconnected fibers can be used to extruded or injectionmold a fixed abrasive discrete finishing member of this invention.Aramid powder can also be used to stabilize the finishing member towear. Organic synthetic resin fibers are preferred because they tend toreduce unwanted scratching to the workpiece surface.

U.S. Pat. Nos. 4,877,813 to Jimmo, 5,079,289 to Takeshi et al., and5,523,352 to Janssen are included herein by reference in its entiretyfor general guidance and appropriate modification by those skilled inthe art.

Further Comments on Preferred Finishing Element

Manufacture of refining surfaces are known. Manufacture of porousrefining surfaces are known. Manufacture of nonporous refining surfacesare known. Manufacture of resilient foamed composite articles are known.Foamed laminates and their production are generally known to those inthe foam arts. Multicomponent shaped foamed articles are generally knownin the foam arts. Generally blowing agents are used to produce foams.Melting the foamed material which is later removed after solidificationcan also produce foamed products. Foams often have at least somecross-linking. Foams can be open celled or closed celled foams. Chemicalbonding with composite shapes such as laminates is generally known inthe foamed arts. Molding composite foamed shapes are also known in thefoamed arts. Illustrative nonlimiting examples of some general foamtechnology in the art include U.S. Pat. Nos. 3,924,362 to McAleer,3,989,869 to Neumaier et al., 4,674,204 to Sullivan et. al., 4,810,570to Rutten et. al., 4,997,707 to Otawa et al., 5,053,438 to Kozma,5,254,641 to Alex et al., 5,397,611 to Wong, 5,581,187 to Sullivan etal., 5,786,406 to Uejyukkoku et al., and 5,847,012 to Shalaby et. al.and are included herein in their entirety for general foam and foamcomposite guidance and for modification by those skilled in the art. Asonly one nonlimiting example, the discrete finishing members can bepositioned on a release film on the inside and then a foam laminate canbe formed using known foam laminate technology. When the laminate isformed and the release sheet is removed, the discrete finishing memberswill be foamed in place in recess. Bonding agents can enhance the fixedattachment of the discrete finishing members to the foam.

Another preferred arrangement is shown in FIG. 11 wherein the discretefinishing members (Reference Numeral 140 are fixedly attached to aunitary resilient body (Reference Numeral 130) in the magnetic finishingelement (Reference Numeral 120). In this embodiment, the magneticcomposition member is not shown because it lies below the optionalunitary resilient body. Preferably the discrete finishing members arearranged in a manner to finish the workpiece surface being finished at auniform rate across the macro workpiece surface. In other words, adiscrete finishing members arranged in pattern and size in the finishingelement in a manner to cause a substantially a uniform finishing rateacross the macro operative finishing interface is preferred and adiscrete finishing members arranged in pattern and size in the finishingelement in a manner to cause a uniform finishing rate across the macrooperative finishing interface is more preferred. Macro uniform finishingrates can help improve quality and reduce costs. The versatility of theunitary finishing elements of this invention are unique and are part ofthe problem recognition and solution of this invention.

A preferred method of forming the unitary resilient body is molding. Apreferred method of forming the discrete finishing member is molding.Molding can be done cost effectively and to tight tolerances. Injectionmolding is a preferred form of molding. Reaction injection molding (RIM)is a preferred form of molding. Thermoset resins can be rapidly made totight tolerances parts with RIM. Co-molding is a preferred form ofmolding. Co-injection molding is a preferred form of molding andco-molding. With co-injection molding, multiple organic synthetic resinscan be molded into composite structures and thus the discrete finishingmember and the unitary resilient body can be formed in one cycle. Closetolerances, rapid composite part formation, and low costs can berealized with co-injection molding. RIM is generally well known to thoseskilled in plastics processing. Co-injection molding is also generallyknown. Co-injection molding can be effected from a plurality of resinsby blocking of injection channels with pairs of abutting plates andseparating the plates to unblock a channel or channels to permitsequentially injecting different resins. General guidance forco-injection molding can be found in U.S. Pat. Nos. 4,275,030 to Mares,5,651,998 to Bertschi et al., and 5,814,252 to Gouldson et al. and thesepatents are included in their entirety for general guidance andmodification by those skilled in the molding arts. Both RIM andco-injection molding can facilitate fixedly connecting the unitaryresilient body to discrete finishing member by using either chemicaland/or thermal energy during the forming process. Fixedly connecting theunitary resilient body to discrete finishing member with energy selectedfrom the group consisting of thermal and chemical energy is preferred.Supplying a first organic synthetic resin composition to a mold and thensupplying a second organic synthetic resin composition to the mold inthe same molding cycle is preferred in a co-injection molding process.Supplying a first organic synthetic resin composition to a mold and thensupplying a second organic synthetic resin composition to the mold inthe same molding cycle forming an attachment between the first andsecond organic resin composition is more preferred in a co-injectionmolding process. Supplying a first organic synthetic resin compositionto a mold and then supplying a second organic synthetic resincomposition to the mold in the same molding cycle forming a bond betweenthe first and second organic resin composition is even more preferred ina co-injection molding process. Supplying a first organic syntheticresin composition to a mold and then supplying a second organicsynthetic resin composition to the mold in the same molding cycleforming a physical bond between the first and second organic resincomposition is even more preferred in a co-injection molding process.Supplying a first organic synthetic resin composition to a mold and thensupplying a second organic synthetic resin composition to the mold inthe same molding cycle forming a chemical bond between the first andsecond organic resin composition is even more preferred in aco-injection molding process. Co-injection molding can make highprecision finishing elements of this invention rapidly and at reducedcost.

Optionally Preferred Refining and Finishing Aid

A refining aid for changing the refining rate is preferred. A finishingaid for changing the finishing rate is preferred. Supplying an effectiveamount of refining aid which changes refining rate is preferred.Supplying an effective amount of refining aid which reduces the numberof unwanted surface defects during refining is more preferred. Supplyingan effective amount of refining aid which changes the differentialrefining rate on a heterogeneous workpiece surface is also morepreferred. A reactive refining aid is also preferred.

Supplying an effective amount of finishing aid, more preferably alubricating aid, which reduces the coefficient of friction between thefinishing element finishing surface and the workpiece surface beingfinished is preferred. Supplying an effective amount of finishing aid,more preferably a lubricating aid, which reduces the unwanted surfacedamage to the surface of the workpiece being finished during finishingis preferred. Supplying an effective amount of finishing aid, morepreferably a lubricating aid, which differentially lubricates differentregions of the workpiece and reduces the unwanted surface damage to atleast a portion of the surface of the workpiece being finished duringfinishing is preferred. An organic lubricating boundary layer is apreferred finishing aid.

Certain particularly preferred workpieces in the semiconductor industryhave regions of high conductivity and regions of low conductivity. Thehigher conductivity regions are often comprised of metallic materialssuch as tungsten, copper, aluminum, and the like. An illustrativeexample of a common lower conductivity region is silicon or siliconoxide. A lubricant which differentially lubricates the two regions ispreferred and a lubricant which substantially lubricates two regions ismore preferred. An example of a differential lubricant is if thecoefficient of friction is changed by different amounts in one regionversus the other region during finishing. For instance one region canhave the coefficient of friction reduced by 20% and the other regionreduced by 40%. This differential change in lubrication can be used tohelp in differential finishing of the two regions. An example ofdifferential finishing is a differential finishing rate between the tworegions. For example, a first region can have a finishing rate of “X”angstroms/minute and a second region can have a finishing rate of “Y”angstroms per minute before lubrication and after differentiallubrication, the first region can have a finishing rate of 80% of “X”and the second region can have a finishing rate of 60% of “Y”. Anexample of where this will occur is when the lubricant tends to adhereto one region because of physical or chemical surface interactions (suchas a metallic conductive region) and adhere or not adhere as tightly tothe an other region (such as a non metallic, non conductive region).Changing the finishing control parameters to change the differentiallubrication during finishing of the workpiece is a preferred method offinishing. Changing the finishing control parameters to change thedifferential lubrication during finishing of the workpiece which in turnchanges the regional finishing rates in the workpiece is a morepreferred method of finishing. Changing the finishing control parameterswith in situ process control to change the differential lubricationduring finishing of the workpiece which in turn changes the regionfinishing rates in the workpiece is an even more preferred method offinishing. The friction sensor probes can play a preferred role indetecting and controlling differential lubrication in the workpieceshaving heterogeneous surface compositions needing finishing.

A lubricant comprising a reactive lubricant is preferred. A lubricantcomprising a boundary lubricant is also preferred. A reactive lubricantis a lubricant which chemically reacts with the workpiece surface beingfinished. A lubricant free of sodium is a preferred lubricant. As usedherein a lubricant free of sodium means that the sodium content is belowthe threshold value of sodium which will adversely impact theperformance of a semiconductor wafer or semiconductor parts madetherefrom. A boundary layer lubricant is a preferred example of alubricant which can form a lubricating film on the surface of theworkpiece surface. As used herein a boundary lubricant is a thin layeron one or more surfaces which prevents or at least limits, the formationof strong adhesive forces between the workpiece being finished and thefinishing element finishing surface and therefore limiting potentiallydamaging friction junctions between the workpiece surface being finishedand the finishing element finishing surface. A boundary layer film has acomparatively low shear strength in tangential loading which reduces thetangential force of friction between the workpiece being finished andthe finishing element finishing surface which can reduce surface damageto the workpiece being finished. In other words, boundary lubrication isa lubrication in which friction between two surfaces in relative motion,such as the workpiece surface being finished and the finishing elementfinishing surface, is determined by the properties of the surfaces, andby the properties of the lubricant other than the viscosity. A boundaryfilm generally forms a thin film, perhaps even several molecules thick,and the boundary film formation depends on the physical and chemicalinteractions with the surface. A boundary lubricant which forms a thinfilm is preferred. A boundary lubricant forming a film having athickness from 1 to 10 molecules thick is preferred and a boundarylubricant forming a film having a thickness from 1 to 6 molecules thickis more preferred and a boundary lubricant forming a film having athickness from 1 to 4 molecules thick is even more preferred. A boundarylubricant forming a film having a thickness from 1 to 10 molecules thickon at least a portion of the workpiece surface being finished isparticularly preferred and a boundary lubricant forming a film having athickness from 1 to 6 molecules thick on at least a portion of theworkpiece surface being finished is more particularly preferred and aboundary lubricant forming a film having a thickness from 1 to 4molecules thick on at least a portion of the workpiece surface beingfinished is even more particularly preferred. A boundary lubricantforming a film having a thickness of at most 10 molecules thick on atleast a portion of the workpiece surface being finished is preferred anda boundary lubricant forming a film having a thickness of at most 6molecules thick on at least a portion of the workpiece surface beingfinished is more preferred and a boundary lubricant forming a filmhaving a thickness of at most 4 molecules thick on at least a portion ofthe workpiece surface being finished is even more preferred and aboundary lubricant forming a film having a thickness of at most 2molecules thick on at least a portion of the workpiece surface beingfinished is even more preferred. An operative motion which continues ina substantially uniform direction can improve boundary layer formationand lubrication. Friction sensor subsystems and finishing sensorsubsystems having the ability to control the friction probe motions andworkpiece motions are preferred and uniquely able to improve finishingin many real time lubrication changes to the operative finishinginterface. Boundary layer lubricants, because of the small amount ofrequired lubricant, can be effective lubricants for use in the operativefinishing interface.

Limited zone lubrication between the workpiece being finished and thefinishing element finishing surface is preferred. As used herein,limited zone lubricating is lubricating to reduce friction between twosurfaces while simultaneously having wear occur. Limited zonelubricating which simultaneously reduces friction between the operativefinishing interface while maintaining a cut rate on the workpiecesurface being finished is preferred. Limited zone lubricating whichsimultaneously reduces friction between the operative finishinginterface while maintaining an acceptable cut rate on the workpiecesurface being finished is more preferred. Limited zone lubricating whichsimultaneously reduces friction between the operative finishinginterface while maintaining a finishing rate on the workpiece surfacebeing finished is preferred. Limited zone lubricating whichsimultaneously reduces friction between the operative finishinginterface while maintaining an acceptable finishing rate on theworkpiece surface being finished is more preferred. Limited zonelubricating which simultaneously reduces friction between the operativefinishing interface while maintaining a planarizing rate on theworkpiece surface being finished is preferred. Limited zone lubricatingwhich simultaneously reduces friction between the operative finishinginterface while maintaining an acceptable planarizing rate on theworkpiece surface being finished is more preferred. Limited zonelubricating which simultaneously reduces friction between the operativefinishing interface while maintaining a polishing rate on the workpiecesurface being finished is preferred. Limited zone lubricating whichsimultaneously reduces friction between the operative finishinginterface while maintaining an acceptable polishing rate on theworkpiece surface being finished is preferred. Lubricant types andconcentrations are preferably controlled during limited zonelubricating. Limited zone lubricating offers the advantages ofcontrolled wear along with reduced unwanted surface damage. In addition,since limited zone lubrication often involves thin layers of lubricant,often less lubricant can be used to finish a workpiece.

Lubricants which are polymeric can be very effective lubricants. Alubricant having functional groups containing elements selected from thegroup consisting of chlorine, sulfur, and phosphorous is preferred and aboundary lubricant having functional groups containing elements selectedfrom the group consisting of chlorine, sulfur, and phosphorous is morepreferred. A lubricant comprising a fatty acid substance is a preferredlubricant. A preferred example of a fatty substance is a fatty acidester or salt. Fatty acid salts of plant origin can be particularlypreferred. A lubricant comprising a synthetic polymer is preferred and alubricant comprising a boundary lubricant synthetic polymer is morepreferred and a lubricant comprising a boundary lubricant syntheticpolymer and wherein the synthetic polymer is water soluble is even morepreferred. A lubricating polymer having a number average molecularweight from 400 to 150,000 is preferred and one having a number averagemolecular weight from 1,000 to 100,000 is more preferred and one havinga number average molecular weight from 1,000 to 50,000 is even morepreferred.

A lubricant comprising a polyalkylene glycol polymer is a preferredcomposition. A polymer of polyoxyalkylene glycol monoacrylate orpolyoxyalkylene glycol monomethacrylate is very useful as a base oflubricant. A polyethylene glycol having a molecular weight of 400 to1000 is preferred. Polyglycols selected from the group polymersconsisting of ethylene oxide, propylene oxide, and butylene oxide andmixtures thereof are particularly preferred. A fatty acid ester can bean effective lubricant.

A polyglycol is an example of a preferred finishing aid. Preferredpolyglycols include glycols selected from the group consisting ofpolyethylene glycol, an ethylene oxide-propylene butyl ethers, adiethylene glycol butyl ethers, ethylene oxide-propylene oxidepolyglycol, a propylene glycol butyl ether, and polyol esters. A mixtureof polyglycols is a preferred finishing aid. Alkoxy ethers of polyalkylglycols are preferred finishing aids. An ultra high molecular weightpolyethylene, particularly in particulate form, is an example ofpreferred finishing aid. A fluorocarbon resin is an example of apreferred lubricating agent. Fluorocarbons selected from the groupconsisting of polytetrafluoroethylene (PTFE), ethylenetetrafluoride/propylene hexafluoride copolymer resin (FEP), an ethylenetetrafluoride/perfluoroalkoxyethylene copolymer resin (PFA), an ethylenetetra fluoride/ethylene copolymer resin, a trifluorochloroethylenecopolymer resin (PCTFE), and a vinylidene fluoride resin are examples ofpreferred fluorocarbon resin finishing aids. A polyphenylene sulfidepolymer is a preferred polymeric lubricating aid.Polytetrafluoroethylene is a preferred finishing aid.Polytetrafluoroethylene in particulate form is a more preferredfinishing aid and polytetrafluoroethylene in particulate form whichresists reaggolmeration is a even more preferred finishing aid. Asilicone oil is a preferred finishing aid. A polypropylene is apreferred finishing aid, particularly when blended with polyamide andmore preferably a nylon 66. A lubricating oil is a preferred finishingaid. A polyolefin polymer can be a preferred effective lubricating aid,particularly when incorporated into polyamide resins and elastomers. Ahigh density polyethylene polymer is a preferred polyolefin resin. Apolyolefin/polytetrafluoroethylene blend is also a preferred lubricatingaid. Low density polyethylene can be a preferred lubricating aid. Afatty acid substance can be a preferred lubricating aid. An examples ofa preferred fatty acid substance is a fatty ester derived from a fattyacid and a polyhydric alcohol. Examples fatty acids used to make thefatty ester are lauric acid, tridecylic acid, myristic acid,pentadecylic acid, palmitic acid, margaric acid, stearic acid,nonadecylic acid, arachidic acid, oleic acid, elaidic acid and otherrelated naturally occurring fatty acids and mixtures thereof. Examplesof preferred polyhydric alcohols include ethylene glycol, propyleneglycol, glycerol, homopolymers of ethylene glycol and propylene glycolor polymers and copolymers thereof and mixtures thereof.

Illustrative, nonlimiting examples of useful lubricants and systems foruse in lubricated finishing element finishing surface systems andgeneral useful related technology are given in the U.S. Pat. Nos.3,287,288 to Reilling, 3,458,596 to Eaigle, 4,332,689 to Tanizaki,4,522,733 to Jonnes, 4,544,377 to Schwen, 4,636,321 to Kipp et. al.,4,767,554 to Malito et. al., 4,877,813 to Jimo et. al., 4,950,415 toMalito 5,079,287 to Takeshi et. al., 5,110,685 to Cross et. al.,5,216,079 to Crosby et. al., 5,225,249 to Biresaw, 5,368,757 to King,5,401,428 to Kalota, 5,433,873 to Camenzind, 5,496,479 to Videau et.al., 5,523,352 to Janssen, 5,591,808 to Jamison, 5,614,482 to Baker et.al., and 5,990,225 to Sagisaka et al. and are included by reference intheir entirety for guidance and modification by those skilled in the artand are included by reference in their entirety herein. Furthernonlimiting and preferred examples of useful lubricated finishingtechnology are found in U.S. Pat. Nos. 6,267,644 to Molnar, 6,283,829 toMolnar, 6,291,349 to Molnar, and 6,293,851 to Molnar and are included byreference in their entirety for guidance and modification by thoseskilled in the art and are included by reference in their entiretyherein. It is also understood that the lubricants and lubricant systemscan be combined in many different ways to produce useful finishingresults given the new guidance herein.

Some preferred suppliers of lubricants include Dow Chemical, HuntsmanCorporation, and Chevron Corporation. An organic boundary layerlubricant consisting essentially of carbon, hydrogen, and oxygen is aparticularly preferred lubricant. Organic boundary layer lubricantswhich are water soluble are also preferred and organic boundary layerlubricants free of mineral oils and vegetable oils can be preferred forapplications where long term stability is especially preferred such asin slurry recycle applications.

Manufacture of Polymeric Components for Magnetic Finishing Elements

Synthetic resin polymer refining elements are generally known in therefining arts. The refining elements can optionally have one or morepolymers therein. Multiphase synthetic resin polymer mixtures can bemanufactured by preferred polymeric processing methods. Preformedsynthetic resin particles can be mixed with the continuous phasesynthetic resin in melt processing equipment such as extruders and meltblending apparatus. Preformed synthetic resin particles can be addedunder mixing conditions to a thermoset resin and mixed therein prior tocuring. The preformed particles can contain preferred additives such asabrasive particles. Under high shear and temperature mixing conditions,a two phase synthetic resin mixture having discrete synthetic resinparticles comprised of polymer “B” dispersed in a continuous phase of aseparate synthetic resin polymer “A”. Further, polymer “B” can containpreferred additives such as abrasives or fibers prior to the high shearmelt mixing process. Alternately one or both of the synthetic resinpolymers can be functionalized to graft with one of the polymers. Thefunctional group can be capable of reacting during mixing with otherfunctional groups. A block copolymer can be used to compatibilize themultiphase polymeric mixture. The mixing can be with self-curedelastomers. The melt mixing for dynamically vulcanizing at least onepolymer in the multiphase synthetic resin mixture is preferred.Optionally, crosslinking agents can be used to enhance crosslinking.Crosslinking agents are generally specific to the polymer or polymericsystem to be crosslinked and are generally well known by those skilledin the crosslinking arts. Illustrative examples of chemical crosslinkingagents include peroxides, phenols, azides, and active compositionsincluding sulfur, silicon, and/or nitrogen. Optionally, initiators canalso be used to enhance crosslinking. Optionally, radiation can be usedto enhance crosslinking. Generally, the radiation type and dosage isspecific to the polymer system undergoing crosslinking. Crosslinkingsystems are effective crosslinking for the polymer or polymeric systembeing crosslinked and generally well known for different polymeric andelastomeric systems. Crosslinking systems can also employ moisture,heat, radiation, and crosslinking agents or combinations thereof theeffect crosslinking. An agent for crosslinking can be preferred forspecific finishing element components. The multiphase synthetic resinmixtures can have preferred morphologies and compositions to changewear, friction, flexural modulus, hardness, temperature sensitivity,toughness, and resistance to fatigue failure during finishing to improvefinishing.

Illustrative examples of multiphase polymeric constructions, theirmanufacture, compatibilization, and dynamic crosslinking can be found invarious United States patents. Included are various crosslinkingsystems, compatibibilizers, and specific guidance on mixing conditionsfor multiphase polymeric systems. U.S. Pat. Nos. 3,882,194 to Krebaum,4,419,408 to Schmukler et al., 4,440,911 to Inoue et al., 4,632,959 toNagano, 4,472,555 to Schmukler et al., 4,762,890 to Strait et al.,4,477,532 to Schmukler et al 5,100,947 to Puydak et al., 5,128,410 toIllendra et al., 5,244,971 to Jean-Marc, 5,266,673 to Tsukahara et al.,5,286,793 to Cottis et al., 5,321,081 to Chundry et al., 5,376,712 toNakajima, 5,416,171 to Chung et al., 5,460,818 to Park et al., 5,504,139to Davies et al., 5,523,351 to Colvin et al., 5,548,023 to Powers etal., 5,585,152 to Tamura et al., 5,605,961 to Lee et al., 5,610,223 toMason, 5,623,019 to Wiggins et al., 5,625,002 to Kadoi et. al.,5,683,818 to Bolvari, 5,723,539 to Gallucci et al 5,783,631 toVenkataswamy, 5,852,118 to Horrion et al., 5,777,029 to Horrion et al.,5,777,039 to Venkataswamy et al., 5,837,179 to Pihl et al., 5,856,406 toSilvis et al., 5,869,591 to McKay et al., 5,929,168 to Ikkala et al.,5,936,038 to Coran et al., 5,936,039 to Wang et al., 5,936,058 toSchauder, and 5,977,271 to McKay et al. comprise illustrativenonlimiting examples of compatible two phase polymer systems, someillustrative examples of manufacture for two phase polymer systems, someillustrative examples of manufacture of polymeric compatibilizers, andmanufacture of a two phase polymer system having discrete syntheticparticles having silica particles dispersed therein, and thesereferences are contained herein by reference in their entirety forfurther general guidance and modification by those skilled in the arts.

Melt forming the finishing element components is preferred. Molding is apreferred type of melt forming. Injection molding is a preferred type ofmolding. Compression molding is a preferred type of molding. Coinjectionmolding is a preferred type of melt forming. Melt injection molding is apreferred method of molding. Melt coinjection molding is a preferredform of coinjection molding. U.S. Pat. No. 4,385,025 to Salerno et al.provides nonlimiting illustrative guidance for injection molding andcoinjection molding and is included herein by reference in its entirety.Melt molding can form components with very tight tolerances. Injectionmolding and coinjection molding offer low cost, good resistance tocontamination, and very tight tolerances. Extrusion is a preferred formof melt forming. Extrusion can be low cost and have good tolerances.Preferred finishing element components include finishing elementfinishing layers, finishing element sublayers, and discrete stiffeningmembers. Melt forming finishing elements and/or components thereof witha thermoplastic multiphase polymeric composition which can be recycledis especially preferred to help reduce costs and improve performance.

Post crosslinking after mixing and finishing element formation (orcomponent thereof) can improve the physical properties of finishingelement components used to finish semiconductor wafer surfaces. Postcrosslinking a synthetic resin forming a multiphase polymeric mixturewith higher Tensile Strength as measured by ASTM D 638 than that of thesame multiphase polymeric mixture formed in the absence of the postcrosslinking is preferred. Post crosslinking a synthetic resin forming amultiphase polymeric mixture with higher Ultimate Tensile Strength asmeasured by ASTM D 638 than that of the same multiphase polymericmixture formed in the absence of the post crosslinking is preferred.Post crosslinking a synthetic resin forming a multiphase polymericmixture with higher Ultimate Elongation as measured by ASTM D 638 thanthat of the sane multiphase polymeric mixture formed in the absence ofthe post crosslinking is preferred. Post crosslinking a synthetic resinforming a multiphase polymeric mixture with lower compression set asmeasured by ASTM D 395 than that of the same multiphase polymericmixture formed in the absence of the post crosslinking is preferred.Post crosslinking a synthetic resin forming a multiphase polymericmixture with higher toughness to that of the same multiphase polymericmixture formed in the absence of the post crosslinking is preferred.Post crosslinking a synthetic resin forming a multiphase polymericmixture with higher Fatigue Endurance as measured by ASTM D 671 to thatof the same multiphase polymeric mixture formed in the absence of thepost crosslinking is preferred. Post crosslinking a synthetic resinforming a multiphase polymeric mixture with higher chemical resistanceto that of the same multiphase polymeric mixture formed in the absenceof the post crosslinking is preferred. Post crosslinking a syntheticpolymer to increase the amount of elastic deformation of a polymericcomposition during finishing motion and decrease the plastic deformationpolymeric composition during operative finishing motion is preferred.Post crosslinking a synthetic polymer to increase the amount of elasticdeformation and decrease the plastic deformation of at least one polymerin a multiphase polymeric composition during operative finishing motionis more preferred. Post crosslinking improving a plurality of theseproperties is especially preferred. Post crosslinking for improving atleast one of these properties by at least 10% is preferred and forimproving at least one of these properties by at least 30% is morepreferred and for improving at least one of these properties by at least70% is even more preferred. Post crosslinking for improving a pluralityof these properties by at least 10% is preferred and for improving aplurality of these properties by at least 30% is more preferred and forimproving a plurality of these properties by at least 70% is even morepreferred. Finishing elements having these improved physical and/orchemical properties can improve finishing and finishing elements havingat least two of these improved physical and/or chemical properties areespecially preferred.

Each of these forming processes can be low cost and produce finishingelements with tight tolerances.

Optionally Preferred Polymeric Components

When finishing workpieces, even a low number of small scratches can leadto lower yields and higher manufacturing costs. For this reason it ispreferred that the polymers on the finishing element finishing surfacebe as free as possible from unwanted particles capable of scratching theworkpiece surface being finished. It is particularly preferred thatunwanted particles capable of scratching the workpiece surface be alsoas small as possible. Methods to purify the polymers prior to formingthe finishing element finishing surface are preferred. Purifyingpolymers in the magnetically responsive refining elements is generallypreferred. Purifying polymer “A” by filtering, extracting, orneutralizing an unwanted reactive group before adding it to a secondpolymer is preferred because this can reduce the cost and can evenimprove the purification process, such as a cleaning or filteringprocess. For abrasive finishing element finishing surfaces havingabrasive particles, purifying a polymer “A” before adding the abrasiveis preferred because this can also reduce the cost of purification andeven improve the purification process. Cleaning or filtering a pluralityof polymers before mixing them or adding abrasive is also preferred forthe similar reasons. By example, a multiphase synthetic polymercomposition having at least one cleaned polymer “A” wherein bothparticles and particle forming materials are removed before being addedto the polymeric multiphase system or the abrasive composition toprovide a polymer “A” free of unwanted particles having a maximumdimension of at least 20 microns capable of scratching a workpiecesurface is preferred. In other words, polymer “A” is precleaned of bothparticles (and particle forming materials) to render it free of unwantedparticles having a maximum dimension of at least 20 microns capable ofscratching a workpiece surface and is preferred. As a further example, afinishing surface having at least one polymer filtered before addingabrasive to the filtered polymer to remove particles having a maximumdimension of at least 10 microns capable of scratching a workpiecesurface is preferred. In a similar fashion, precleaned polymer to removeparticles having a maximum dimension of 1 micron is even more preferred.By pretreating polymers to clean them before making the finishingelement, generally a higher performance finishing element finishingsurface can be made.

Finishing elements for finishing semiconductor wafers generally have avery high degree of cleanliness and/or purity to finish semiconductorwafers at high yields. Corrosive contaminates and/or contaminateparticles unintentionally in the finishing element can cause yieldlosses costing thousands of dollars. Purifying the ingredients in thefinishing element prior to manufacture of the finishing element ispreferred. A preferred example of purifying ingredients and/or polymersis cleaning the ingredients and/or polymers to remove unwanted reactivefunctional groups that can lead to formation of unwanted particles whichcan cause unwanted damage to the workpiece surface during finishing.Cleaning at least one polymer wherein both particles and particleforming materials are removed (or rendered inactive, thus removing them)in order to provide a cleaned polymer free of unwanted particles capableof scratching the workpiece surface is preferred and cleaning aplurality of polymers wherein both particles and particle formingmaterials are removed (or rendered inactive, thus removing them) inorder to provide a plurality of cleaned polymers free of unwantedparticles capable of scratching the workpiece surface is more preferred.Melt purifying the synthetic resin before melt mixing multiple syntheticresins is a preferred example of a purifying step. Vacuum melt purifyingis a preferred example of a melt purifying step. Melt vacuum screwextrusion is a preferred form of melt purifying the synthetic resin.Melt vacuum screw extrusion can remove or reduce unwanted low molecularweight substances such as unreacted oligomers and unreacted monomers.Unwanted low molecular weight side reaction products developed duringpolymeric graft reactions can also be removed with vacuum screwextrusion. Melt filter purifying is a preferred form of melt purifyingthe synthetic resin. Filtering the polymer to remove unwantedcontaminants is a preferred method of cleaning or purifying the polymer.Solvent assisted filtering can be an effective method to remove unwantedcontaminants. Melt filtering can also be an effective method to removeunwanted contaminants. Thermal assisted filtering can be an effectivemethod to remove unwanted contaminants. Melt filtering can removeunwanted hard particulate contaminants which can cause scratching duringsubsequent finishing. A screen pack can be used for filtering the melt.A screen pack designed for melt extrusion is a preferred example of meltfiltering. Melt filter purifying to remove all visible unmelted hardparticle contaminants is preferred. Filter purifying to remove unmeltedhard particle contaminants of less than 20 microns in diameter ispreferred and of at most 10 microns is more preferred and of at most 1micron is even more preferred and of at most 0.5 micron is even moreparticularly preferred. The smallest size particle which can be removedby filtration depends on the filtration system used, viscosities,available pressure drops, and, in some cases, the thermal stability ofthe polymer being filtered. Filtration systems are continuously beingimproved. For example, pressure drops can be minimized by some advancedsystems and new solvent assisted systems have been developed and arereported in the recent United States patent literature. Evaluations forimproved cleaning and filtering are continuing. Particles of at least0.1 micron, perhaps smaller, are currently believed to be removable.Melt purifying the synthetic resins with melt purifying equipment ispreferred before dynamic formation of the two phase because it is moredifficult to filter the two phase system. Polymers can also be purifiedby extraction techniques (such as liquid extraction and selectiveprecipitation) to remove unwanted contaminants. A vacuum extruder andpolymer melt filters are preferred examples of melt purifying equipment.The cleaning and filtering of the polymers is preferably done beforeadding abrasives to the polymeric composition because this makesfiltering and cleaning easier and more cost effective. The cleaning andfiltering of the polymers for a multiphase polymeric composition ispreferably done before making to the multiphase polymeric compositionbecause this makes filtering and cleaning easier and more costeffective. In other words, precleaned and/or prefiltered polymers arepreferred starting components to make an abrasive composition and/or amultiphase polymeric composition. U.S. Pat. Nos. 4,737,577 to Brown,5,198,471 to Nauman et al., 5,266,680 to Al-Jimal et al., 5,756,659 toHughes, 5,928,255 to Hobrecht, 5,869,591 to McKay et al., 5,977,271 toMcKay et al. and 5,977,294 to Hoehn give further non-limiting guidancefor some preferred purifying methods and equipment and are includedherein in the entirety by reference.

An abrasive finishing element finishing surface comprising a multiphasesynthetic polymer composition having a continuous phase of thermoplasticpolymer “A” and a second synthetic polymer “B” in a different phasehaving abrasive particles dispersed therein is preferred. Thismultiphase abrasive composition can be used to operatively finish aworkpiece. A dynamically formed second synthetic polymer “B” phase isespecially preferred. A dynamically formed composition can reduce costsand also help to reduce contamination from additional handling. Acrosslinked polymer “B” is preferred because this can improvetemperature resistance and also increase elastic deformation duringoperative finishing.

Workpiece

A workpiece needing finishing is preferred. A homogeneous surfacecomposition is a workpiece surface having one composition throughout andis preferred for some applications. A workpiece needing refining ispreferred. A workpiece needing polishing is preferred. A workpieceneeding planarizing is especially preferred. A workpiece having amicroelectronic surface is preferred. A workpiece surface having aheterogeneous surface composition is preferred. A heterogeneous surfacecomposition has different regions with different compositions on thesurface, further the heterogeneous composition can change with thedistance from the surface. Thus finishing can be used for a singleworkpiece whose surface composition changes as the finishing processprogresses. A workpiece having a microelectronic surface having bothconductive regions and nonconductive regions is more preferred and is anexample of a preferred heterogeneous workpiece surface. Illustrativeexamples of conductive regions can be regions having copper or tungstenand other known conductors, especially metallic conductors. Metallicconductive regions in the workpiece surface consisting of metalsselected from the group consisting of copper, aluminum, and tungsten orcombinations thereof are particularly preferred. A semiconductor deviceis a preferred workpiece. A substrate wafer is a preferred workpiece. Asemiconductor wafer having a polymeric layer requiring finishing ispreferred because a lubricating aid can be particularly helpful inreducing unwanted surface damage to the softer polymeric surfaces. Anexample of a preferred polymer is a polyimide. Polyimide polymers arecommercially available from E. I. DuPont Co. in Wilmington, Del. Asemiconductor having a interlayer dielectric needing finishing ispreferred. A semiconductor having a low-k dielectric layer is apreferred workpiece.

This invention is particularly preferred for workpieces requiring ahighly flat surface. Finishing a workpiece surface to a surface to meetthe specified semiconductor industry circuit design rule is preferredand finishing a workpiece surface to a surface to meet the 0.35micrometers feature size semiconductor design rule is more preferred andfinishing a workpiece surface to a surface to meet the 0.25 micrometersfeature size semiconductor design rule is even more preferred andfinishing a workpiece surface to a to meet the 0.18 micrometerssemiconductor design rule is even more particularly preferred.Semiconductor meeting at most the 0.25 micrometer feature size designrule is preferred and at most the 0.16 micrometer feature size designrule is preferred and at most the 0.13 micrometer feature size designrule is preferred. An electronic wafer finished to meet a requiredsurface flatness of the wafer device rule in to be used in themanufacture of ULSIs (Ultra Large Scale Integrated Circuits) is aparticularly preferred workpiece made with a method according topreferred embodiments. The design rules for semiconductors are generallyknown to those skilled in the art. Guidance can also be found in the“The National Technology Roadmap for Semiconductors” published bySEMATECH in Austin, Tex.

A semiconductor wafers having low-k dielectric layers(s) are preferredworkpiece. Illustrative nonlimiting examples of low-k dielectrics arelow-k polymeric materials, low-k porous materials, and low-k foammaterials. As used herein, a low-k dielectric has a k value of most 3.5and more preferably of at most 3.0 and more preferably of at most 2.5.Illustrative examples include doped oxides, organic polymers, highlyfluorinated organic polymers, and porous materials. Low-k dielectricmaterials are generally known to those skilled in the semiconductorwafer arts.

A semiconductor wafer having a diameter of at least 200 mm is preferredand a semiconductor wafer having a diameter of at least 300 mm is morepreferred. As the semiconductor wafer become larger, it becomes morevaluable which makes higher yields very desirable.

Supplying an organic lubricant to a semiconductor wafer during finishinghaving a diameter of at least 200 mm is preferred and supplying anorganic lubricant to a semiconductor wafer during finishing having adiameter of at least 300 mm is more preferred. Supplying reactivelubricant to a semiconductor wafer during finishing having a diameter ofat least 200 mm is even more preferred and supplying reactive lubricantto a semiconductor wafer during finishing having a diameter of at least300 mm is more preferred. Large semiconductor wafers can generally befinished more effectively with an aqueous lubricating composition.Friction and heat generation can be more effectively controlled.

For finishing of semiconductor wafers having low-k dielectric layers(low dielectric constant layers), finishing aids, more preferablylubricating aids, are preferred. Illustrative nonlimiting examples oflow-k dielectrics are low-k polymeric materials, low-k porous materials,and low-k foam materials. As used herein, a low-k dielectric has at mosta k range of less than 3.5 and more preferably less than 3.0 and evenmore preferably less than 2.5 and even more especially preferred is lessthan 2.0. Illustrative examples include doped oxides, organic polymers,highly fluorinated organic polymers, and porous materials. A porouslow-k dielectric layer is a preferred low-k dielectric layer. Low-kdielectric materials are generally known to those skilled in thesemiconductor wafer arts. Abrasive organic synthetic resin particles canbe effective to finishing low-dielectric materials. Abrasive organicsynthetic resin asperities can be effective to finishing low-dielectricmaterials. Multilevel semiconductor wafers such as those having low-kdielectric layers and multilevel metal layers are generally known bythose skilled in the semiconductor arts and U.S. Pat. No. 6,153,833 toDawson et al. is included herein by reference for general non-limitingguidance for those skilled in the art. Since low-k dielectric layersgenerally have lower mechanical strength, the lower coefficient offriction that is offered by organic lubricating boundary layers isparticularly preferred. A semiconductor wafer having a plurality oflow-k dielectric layers is a preferred workpiece and a semiconductorwafer having at least 3 of low-k dielectric layers is a more preferredworkpiece and a semiconductor wafer having at least 5 of low-kdielectric layers is an even more preferred workpiece. Supplying alubricant to plurality of different low-k dielectric layers duringfinishing of the same semiconductor wafer is preferred and supplying alubricant to at least 3 of different low-k dielectric layers duringfinishing of the same semiconductor wafer is more preferred andsupplying a lubricant to at least 5 of the low-k dielectric layersduring finishing of the same semiconductor wafer is even more preferred.A semiconductor wafer having at most 10 low-k dielectric layers iscurrently preferred but in the future this can increase. Semiconductorwafers for logic integrated circuits are particularly preferred. Defectscaused during finishing can be reduced by supplying a lubricant.

A semiconductor wafer having multiple logic die with multiple low-kdielectric layers is a preferred workpiece. A semiconductor wafer havingmultiple memory die with multiple low-k dielectric layers is a preferredworkpiece. These workpieces can be improved by reducing unwanted surfacedamage and/or unwanted tangential forces of friction during finishing.

A semiconductor wafer having a plurality of metal layers is a preferredworkpiece and a semiconductor wafer having at least 3 of metal layers isa more preferred workpiece and a semiconductor wafer having at least 5of the metal layers is an even more preferred workpiece. A semiconductorwafer having at most 10 metal layers is currently preferred but in thefuture this will increase. A semiconductor wafer having logic chips orlogic die is particularly preferred because they can have multiple metallayers for supplying lubricants such as preferred lubricants duringfinishing. Supplying a lubricant to a plurality of finishing layers ofthe same semiconductor wafer is preferred and supplying a lubricant toat least 3 of finishing layers of the same semiconductor wafer is morepreferred and supplying a lubricant to at least 5 of finishing layers ofthe same semiconductor wafer is more preferred. Defects caused duringfinishing can be reduced by supplying a lubricant. Semiconductor wafershaving a plurality of metal layers or dielectric layers are generallyknown to those skilled in the semiconductor wafer arts and U.S. Pat.Nos. 5,516,346 to Cadien et al. and 5,836,806 to Cadien et al. areincluded herein in their entirety for general illustrative guidance.Further, defects in the first finished layer can cause defects in thesecond finished layer (and so on). In other words, defects in a priorlayer can cause defects in a latter layer. Preferred in situ control canhelp reduce unwanted defects. Thus by supplying a lubricant duringfinishing (with preferred situ control), one can improve yields byminimizing unwanted defects in both the current and subsequent layers. Amethod which updates the cost of manufacture control parameters, look-uptables, algorithms, or control logic consistent with the currentmanufacturing step is preferred. A method which updates the cost ofmanufacture control parameters, look-up tables, algorithms, or controllogic consistent with the current manufacturing step while evaluatingprior manufacturing steps (such as completed manufacturing steps) ispreferred. A method which updates the cost of manufacture controlparameters, look-up tables, algorithms, or control logic consistent withthe current manufacturing step while evaluating future manufacturingsteps is preferred. A method which updates the cost of manufacturecontrol parameters, look-up tables, algorithms, or control logicconsistent with the current manufacturing step while evaluating bothprior and future manufacturing steps is more preferred. Thesemiconductor wafer can be tracked for each finishing step duringprocessing with a tracking means such as tracking code. As anillustrative example, a semiconductor wafer can be assigned with atrackable UPC code. U.S. Pat. No. 5,537,325 issued to Iwakiri, et al. onJul. 16, 1997 teaches a method to mark and track semiconductor waferssliced from an ingot through the manufacturing process and is includedfor by reference in its entirety for general guidance and appropriatemodification by those skilled in the art. As a nonlimiting example,Cognex Corporation in Natick, Mass. markets commercial tacking means fortracking semiconductor wafers. As further illustration of preferredtracking codes include 2D matrix (such as SEMI 2D matrix), alphanumeric,and bar codes. Processes, performance, and preferred lubricationconditions and information can be tracked and stored by wafer (and/orwafer batches) with this technology when used with the new disclosuresherein.

Finishing in preferred value ranges of the coefficient of frictionand/or effective coefficient of friction is generally advantageous.Using the coefficient of friction and/or effective coefficient offriction to manage, control, and improve finishing results by reducingunwanted surface defects and improving semiconductor wafer processingcosts is a particularly preferred embodiment of this invention. Usingthe coefficient of friction and/or effective coefficient of friction tocontrol in situ, real time finishing is particularly preferred.

Preferred semiconductor wafer surfaces can be heterogeneous. Aheterogeneous semiconductor preferably has different uniform regionssuch as conductive regions and non-conductive regions. Another preferredexample is a having more conductive regions and less conductive regions.During finishing it is often the case that one of the uniform regions isparticularly preferred during finishing. Also, because of differencessuch as surface energy, preferred marginal lubrication may be morepreferred for one uniform region or the other uniform region. Apreferred uniform region in some applications is the conductive region.A preferred uniform region in some applications is the non-conductiveregion. Heterogeneous semiconductor wafer surfaces are generally knownto those skilled in the semiconductor wafer processing arts.

A workpiece which is manufactured in a multiplicity of separatemanufacturing steps is preferred. A workpiece which is manufactured in amultiplicity of separate and distinct manufacturing steps is morepreferred. A workpiece which is manufactured in at least 10 separatemanufacturing steps is preferred. A workpiece which is manufactured inat least 10 separate and distinct manufacturing steps is more preferred.A workpiece which is manufactured in at least 25 separate manufacturingsteps is preferred. A workpiece which is manufactured in at least 25separate and distinct manufacturing steps is more preferred. A workpiecemanufactured in steps which comprise preferred non-equilibrium processcontrol is preferred. A workpiece manufactured in steps which include arefining step comprising non-equilibrium process control is preferred. Aworkpiece manufactured in steps which include a plurality of refiningsteps comprising non-equilibrium process control is more preferred. Aworkpiece manufactured in steps which include at least three of refiningsteps comprising non-equilibrium process control is more preferred. Aworkpiece manufactured in steps which include a refining step having aportion of the step in non-steady state is preferred. A workpiecemanufactured in steps which include a plurality of refining steps havinga portion of the step in non-steady state is more preferred. A workpiecemanufactured in steps which include at least three of refining stepshaving a portion of the step in non-steady state is more preferred.Determining a change for a process control parameter with progress ofrefining information and changing a process control parameter while aprocess is in a non-steady state is preferred for some process controloperations. Determining a change for a process control parameter withprogress of refining information and changing a process controlparameter while a process is in a non-equilibrium time period of changeis preferred for some process control operations. An illustrativeexample of non-steady state processing time period is the partialclearing of a conductive layer from a nonconductive layer. During thisperiod of clearing the surface composition (refining) of the workpiecegenerally has a surface composition changing during a non-steady timeperiod. During this period of clearing the surface composition(refining) of the workpiece can have frictional and/or differentialfrictional changes during a non-steady time period.

A generally robust control subsystem for manufacturing a workpiecehaving multiple manufacturing steps wherein some having non-steady timeperiods is preferred. A control system with a plurality of operativesensors, a plurality of processors, and at least one controller is anonlimiting example of a preferred control subsystem for controllingduring non-steady state. A process model and/or a cost of manufacturemodel can be preferred. A workpiece having an identification code ispreferred and a workpiece having a unique identification code ispreferred. An identification code can further aid process control of amanufacturing process having multiple steps. A semiconductor wafer is apreferred example of a workpiece. A workpiece having a microelectroniccomponent is another example.

Workpiece Holder

A workpiece holder which facilitates coupling of the magnetic field ofthe driver magnetic system with the magnetically responsive finishingelement. Plastics are a preferred composition for the workpiece holder.A nonmagnetic stainless steel workpiece holder can be used. A vacuumsystem in the workpiece holder can facilitate holding of the workpiece.

Adjustable retainer rings can also help facilitating holding theworkpiece. An adjustable retainer ring can also help reduce the edgeexclusion or loss during finishing. A retainer ring having a width ofleast one third the width of the discrete finishing member is preferredand having a width of at least one half the width of the discretefinishing is more preferred.

Magnetic Refining and Finishing System Further Guidance

Coupling magnetic driver systems to drive magnetically responsiverefining elements to generate different motions such as linear motion,circular motion, and eccentric motion are known. Magnetic driver systemswhich transmit torque through nonmagnetic structures to drive mixing andpumping elements and the like are known in the mixing arts and can beadapted for use with the confidential magnetic finishing systemsdisclosed herein using the confidential teaching disclosed herein.Mechanical motion mechanisms to generate linear motions, planar motions(such as x-y motion) circular motion, and orbital motions. Control ofthe magnetic coupling between the magnetically responsive finishingelement and driving magnet by varying the distance and/or usingelectronically adjustable magnetic fields is preferred. Nonlimitingillustrative examples are included in U.S. Pat. Nos. 4,088,379 toPerper, 4,836,826 to Carter et al., 4,927,337 to Lustwerk, 5,216,308 toMeeks, 5,253,986 to Bond et al., 5,254,925 to Flynn, 5,315,197 to Meekset al., 5,331,861 to Joffe, 5,463,263 to Flynn, 5,708,313 to Bowes etal., 5,723,917 to Chitayat et al., 5,779,456 to Bowes et al., 5,834,739to Lockwood et al., 5,906,105 to Ugolini, 5,911,503 to Braden, 5,961,213to Tsuyuki et al., 6,005,317 to Lamb, 6,065,865 to Eyraud et al.,6,076,957 to Gomes, 6,095,677 to Karkos Jr. et al., and 6,121,704 toFukuyama et al., and each is included by reference in their entirety forgeneral useful guidance and modification by those skilled in the artusing the confidential teaching and guidance contained herein.

Refining Composition

A refining composition is preferred during refining. A refining fluid isa preferred refining composition. A refining composition including areactive refining aid is preferred. A reactive liquid composition can bea preferred refining fluid.

Functional refining and finishing compositions are generally known tothose skilled in the art for chemical mechanical finishing. A chemicalmechanical polishing slurry can generally be used as finishingcomposition. Alternately, a finishing composition can be modified bythose skilled in the art by removing the abrasive particles to form afinishing composition free of abrasive particles. A finishingcomposition substantially free of abrasive particles is preferred and afinishing composition free of abrasive particles is more preferred.Finishing compositions have their pH adjusted carefully, and generallycomprise other chemical additives are used to effect chemical reactionsand/other surface changes to the workpiece. A finishing compositionhaving dissolved chemical additives is particularly preferred.Illustrative examples preferred dissolved chemical additives includedissolved acids, bases, buffers, oxidizing agents, reducing agents,stabilizers, and chemical reagents. A finishing composition having achemical which substantially reacts with material from the workpiecesurface being finished is particularly preferred. A finishingcomposition having a chemical which selectively chemically reacts withonly a portion of the workpiece surface is particularly preferred. Afinishing composition having a chemical which preferentially chemicallyreacts with only a portion of the workpiece surface is particularlypreferred.

Some illustrative nonlimiting examples of polishing slurries which canbe modified and/or modified by those skilled in the art are nowdiscussed. An example slurry comprises water, a solid abrasive materialand a third component selected from the group consisting of HNO₃, H₂SO₄,and AgNO₃ or mixtures thereof. Another polishing slurry comprises water,aluminum oxide, and hydrogen peroxide mixed into a slurry. Otherchemicals such as KOH (potassium hydroxide) can also be added to theabove polishing slurry. Still another illustrative polishing slurrycomprises H₃PO₄ at from about 0.1% to about 20% by volume, H₂O₂ at from1% to about 30% by volume, water, and solid abrasive material. Stillanother polishing slurry comprises an oxidizing agent such as potassiumferricyanide, an abrasive such as silica, and has a pH of between 2 and4. Still another polishing slurry comprises high purity fine metaloxides particles uniformly dispersed in a stable aqueous medium. Stillanother polishing slurry comprises a colloidal suspension of SiO₂particles having an average particle size of between 20 and 50nanometers in alkali solution, demineralized water, and a chemicalactivator. U.S. Pat. Nos. 5,209,816 to Yu et al. issued in 1993,5,354,490 to Yu et al. issued in 1994, 5,540,810 to Sandhu et al. issuedin 1996, 5,516,346 to Cadien et al. issued in 1996, 5,527,423 to Nevilleet al. issued in 1996, 5,622,525 to Haisma et al. issued in 1997, and5,645,736 to Allman issued in 1997 comprise illustrative nonlimitingexamples of slurries contained herein by reference in their entirety forfurther general guidance and modification by those skilled in the arts.Commercial CMP polishing slurries are also available from RodelManufacturing Company in Newark, Del. Application WO 98/18159 to Hudsongives general guidance for those skilled in the art for modifyingcurrent slurries to produce an abrasive free finishing composition.

In a preferred mode, the finishing composition is free of abrasiveparticles. However as the fixed abrasive finishing element wears downduring finishing, some naturally worn fixed abrasive particles can beliberated from the fixed abrasive finishing element can thus temporarilybe present in the finishing composition until drainage or removal.

A reactive gas can be a preferred refining fluid. A reactive gas havinga refining aid comprising a halogenated material is preferred. Areactive gas which has been activated with in an activating system ispreferred. A gaseous oxidizing agent comprises a preferred reactive gas.Ozone is a preferred gaseous oxidizing agent. A refining chamber free ofa supplied liquid (such as water) is preferred for some refiningapplications. A reactive gas can improve the refining rate by chemicallyreacting with the workpiece surface facilitate the action of therefining element. A reactive gas can also help remove some types of wearparticles from the surface of the workpiece during refining. Ozone isparticularly preferred because it can be generated safely at the localsite of consumption. Ozone can be generated by subjecting air or oxygento an effective amount of ultraviolet radiation. Ozone can also begenerated electronic irradiation of air or oxygen. Additional guidancecan be found on gaseous oxidizing agents in U.S. Pat. Nos. 4,812,325 toIshihara et al., 5,613,983 to Terry et al., and 5,827,560 to Fu andthese patents are included in their entirety for general guidance andmodification by those skilled in the arts. Use of a reactive lubricantfor planarizing is generally known to those in the semiconductor waferarts. U.S. Pat. Nos. 6,267,723 to Molnar, 6,283,829 to Molnar, 6,291,349to Molnar, 6,293,851 to Molnar, 6,346,202 to Molnar, and 6,428,388 areincluded in their entirety for further general guidance and modificationby those skilled in the art. A refining fluid comprising a reactive gascan be preferred for some refining applications such as when refiningcertain low k dielectric layers. Generating the reactive species aneffective distance from the sealed chamber and/or workpiece surface tofacilitate control of the refining rate is preferred. Refining with areactive gas is generally performed with a relatively low pressure inthe interface between the workpiece surface and the refining elementsurface. In situ control of the refining process is preferred. In situcontrol of the generation of the reactive gas such as a gaseousoxidizing agent is also generally preferred.

Operative Finishing Motion

Magnetic chemical mechanical finishing during operation has thefinishing element in operative finishing motion with the surface of theworkpiece being finished. A relative lateral parallel motion of thefinishing element to the surface of the workpiece being finished is anoperative finishing motion. Lateral parallel motion can be over veryshort distances or macro-distances. A parallel circular motion of thefinishing element finishing surface relative to the workpiece surfacebeing finished can be effective.

Some illustrative nonlimiting examples of preferred operative finishingmotions for use in the invention are also discussed. Some embodimentshave some particularly preferred operative finishing motions of theworkpiece surface being finished and the finishing element finishingsurface. Moving the finishing element finishing surface in an operativefinishing motion to the workpiece surface being finished is a preferredexample of an operative finishing motion. Moving the workpiece surfacebeing finished in an operative finishing motion to the finishing elementfinishing surface is a preferred example of an operative finishingmotion. Moving the finishing element finishing surface in a parallelcircular motion to the workpiece surface being finished is a preferredexample of an operative finishing motion. Moving the workpiece surfacebeing finished in a parallel circular motion to the finishing elementfinishing surface is a preferred example of an operative parallelmotion. Moving the finishing element finishing surface in a parallellinear motion to the workpiece surface being finished is a preferredexample of an operative finishing motion. Moving the workpiece surfacebeing finished in a parallel linear motion to the finishing elementfinishing surface is a preferred example of an operative parallel. Theoperative finishing motion performs a significant amount of thepolishing and planarizing. An operative finishing motion which causestribochemical finishing reactions is preferred. Operative finishing usesoperative finishing motion to effect polishing and planarizing.

The relative operative speed is measured between the finishing elementfinishing surface and the workpiece surface being finished. Supplying alubricating aid between the interface of the finishing element finishingsurface and the workpiece surface being finished when high speedfinishing is preferred to reduce the level of surface defects. Supplyinga lubricating aid between the interface of a fixed abrasive cylindricalfinishing element and a workpiece surface being finished is a preferredexample of high speed finishing. An operative finishing motion whichmaintains substantially constant instantaneous relative velocity betweenthe finishing element and all points on the semiconductor wafer ispreferred for some finishing equipment. An operative finishing motionwhich maintains substantially different instantaneous relative velocitybetween the finishing element and some points on the semiconductor waferis preferred for some finishing equipment.

U.S. Pat. Nos. 5,177,908 to Tuttle, 5,234,867 to Schultz et al 5,522,965to Chisholm et al., U.S. Pat. No. 5,759,918 to Hoshizaki et al., U.S.5,762,536 to Pant, 5,735,731 to Lee, 5,851,136 to Lee et al 5,908,530 toHoshizaki et al., 5,938,884 to Hoshizaki et al., and 5,962,947 toTalieh, and 5,993,298 to Duescher comprise illustrative nonlimitingexamples of types of operative finishing motions, operative finishingdrive subsystems, operative movement mechanisms, adjustable retainerrings, and other useful information and each is contained by referencein their entirety for teaching and guidance herein and can be adaptedfor new magnetically applied finishing motions and are thus given forgeneral guidance for those skilled in the arts.

A magnetic operative motion inducing chemical refining is a preferredrefining motion. A magnetic operative motion inducing tribochemicalrefining is a preferred refining motion. A magnetic operative motioninducing mechanical refining is a preferred refining motion. A magneticoperative motion inducing frictional refining is a preferred refiningmotion. A magnetic operative motion inducing tribochemical finishing isa preferred finishing. Applying a magnetically induced operativefinishing motion to an operative finishing interface is preferred.Applying a magnetically induced operative finishing motion to anoperative finishing interface causing tribochemical reactions andfinishing is preferred. A refining system having a workpiece holder, amagnetic refining element, and capable of applying an induced magneticoperative finishing motion to an operative refining interface is morepreferred. A chemical mechanical finishing system having a workpieceholder, a magnetic finishing element, and capable of applying an inducedmagnetic operative finishing motion to an operative finishing interfaceis more preferred.

Workpiece Finishing Sensor

A workpiece finishing sensor is a sensor which senses the finishingprogress to the workpiece in real time so that an in situ signal can begenerated. A workpiece finishing sensor is preferred. A non-contactworkpiece sensor is a preferred workpiece sensor which is free ofphysical contact with the workpiece. A workpiece finishing sensor whichfacilitates measurement and control of finishing is preferred.

The change in friction during finishing can be measured using technologygenerally familiar to those skilled in the art. A thermistor is anon-limiting example of preferred non-optical thermal sensor. A thermalcouple is another preferred non-optical thermal sensor. An opticalthermal sensor is a preferred thermal sensor. An infrared thermal sensoris a preferred thermal sensor. Sensors to measure friction in workpiecesbeing finished are generally known to those skilled in the art. Nonlimiting examples of methods to measure friction in friction sensorprobes are described in the following U.S. Pat. Nos. 5,069,002 to Sandhuet al., 5,196,353 to Sandhu, 5,308,438 to Cote et. al., 5,595,562 to Yauet al., 5,597,442 to Chen, 5,643,050 to Chen, and 5,738,562 to Doan etal. and are included by reference herein in their entirety for guidanceand can be advantageously modified by those skilled in the art for usein this invention. Thermal sensors are available commercially from TerraUniversal, Inc. in Anaheim, Calif. and Hart Scientific in American Fork,Utah.

A workpiece finishing sensor for the workpiece being finished ispreferred. A sensor for the workpiece being finished selected from thegroup consisting of friction sensors, thermal sensors, optical sensors,acoustical sensors, and electrical sensors are preferred sensors for theworkpiece being finished. Workpiece thermal sensors and workpiecefriction sensors are non-limiting examples of preferred workpiecefriction sensors. As used herein, a workpiece friction sensor can sensethe friction between the interface of the workpiece being finished andthe finishing element finishing surface during operative finishingmotion.

Additional non-limiting preferred examples of workpiece finishingsensors will now be discussed. Preferred optical workpiece finishingsensors are discussed. Preferred non-optical workpiece finishing sensorsare also discussed. The endpoint can detected by impinging a laser lightonto the workpiece being polished and measuring the reflected lightversus the expected reflected light as an measure of the planarizationprocess. A system which includes a device for measuring theelectrochemical potential of the slurry during processing which iselectrically connected to the slurry, and a device for detecting theendpoint of the process, based on upon the electrochemical potential ofthe slurry, which is responsive to the electrochemical potentialmeasuring device. Endpoint detection can be determined by an apparatususing an interferometer measuring device to direct at an unpatterned dieon the exposed surface of the wafer to detect oxide thickness at thatpoint. A semiconductor substrate and a block of optical quartz aresimultaneously polished and an interferometer, in conjunction with adata processing system is then used to monitor the thickness and thepolishing rate of the optical block to develop an endpoint detectionmethod. A layer over a patterned semiconductor is polished and analyzedusing optical methods to determine the end point. An energy supplyingmeans for supplying prescribed energy to the semiconductor wafer is usedto develop a detecting means for detecting a polishing end point to thepolishing of film by detecting a variation of the energy supplied to thesemiconductor wafer. The use of sound waves can be used during chemicalmechanical polishing by measuring sound waves emanating from thechemical mechanical polishing action of the substrate against thefinishing element. A control subsystem can maintain a wafer count,corresponding to how many wafers are finished and the control subsystemcan regulate the backside pressure applied to each wafer in accordancewith a predetermined function such that the backside pressure increasesmonotonically as the wafer count increases. The above methods aregenerally known to those skilled in the art. U.S. Pat. Nos. 5,081,796 toSchultz, 5,222,329 to Yu, 5,658,183 to Sandhu et al., 5,433,651 toLustig et al., 5,439,551 to Meikle et al., 5,499,733 to Litvak,5,461,007 to Kobayashi, 5,413,941 to Koos et al., 5,503,707 to Maung etal., 5,637,185 Murarka et al., 5,643,046 Katakabe et al., 5,643,060 toSandhu et al., 5,653,622 to Drill et al., 5,658,622 to Drill et al.,5,700,180 to Sandhu et al., 5,705,435 to Chen, 5,730,642 to Sandhu etal., 5,851,135 to Sandhu et al., and 6,120,347 to Sandhu et al. areincluded by reference in their entirety and included herein for generalguidance and modification by those skilled in the art.

Magnetic Finishing Sensor

Operative finishing element sensors are preferred for helping to controlmagnetic finishing. Non-contact magnetic finishing element sensors arepreferred. Optical magnetic finishing element sensors are preferred.Radiation magnetic finishing element sensors are preferred. Reflectanceof a light beam on a marked line or spot on the can be used to aid amagnetic finishing element sensor. Fluorescence can also be used. Amodulated radiation source such as a laser with a tuned detector is anillustrative example of a non-contact magnetic finishing element sensor.Those skilled in the art can generally use the guidance and teachingscontained herein to magnetically finish a workpiece with an operativemagnetic finishing sensor.

Magnetic Driver Sensor and Magnetic Driver Sensor Assembly

Sensors and controllers for electric motors, and positioning/movingassemblies are generally known in the art of chemical mechanicalpolishing and are used in many commercial chemical mechanical polishers.Using the teaching and guidance contained herein, those skilled in theart can generally apply sensor and controllers to electomagnet drivers.Measurement and control of such variables as electric current andvoltage are generally well known.

Cost of Manufacture Information

Cost of manufacture parameters for chemical mechanical finishing arevery complex.

Cost of manufacture parameters and Cost of Ownership (COO) metrics aregenerally known by those skilled in the semiconductor arts. Toapplicant's knowledge, because of their complexity they have not beenused for in situ process improvement. Applicant has now foundunexpectedly that cost of manufacture parameters can be used toadvantage to improve both finishing control and cost of manufactureduring real-time finishing. Particular cost of manufacture parametersare preferred because they have a large impact on efficiency andeffectiveness of chemical mechanical finishing as well as the properselection of improved process control parameters and their selectedvalues. A preferred cost of manufacture parameter is the defect density.FIG. 13 illustrates the effect of defect density on the cost ofmanufacture for a particular semiconductor wafer (finished wafer valuedof $500). Note that an increase of defect density from 0.01 to 0.03 canincrease the cost of manufacture for finishing by about $1.50. Anotherpreferred cost of manufacture parameter is equipment yield. FIG. 14illustrates the effect of a decrease of 1% in equipment yield canincrease the cost of manufacture by $2.50 (in process wafer valued of$250). Another preferred cost of manufacture parameter for in situprocess control is the parametric yield. FIG. 15 illustrates the effectof a decrease of 1% in parametric yield which can increase the cost ofmanufacture by $5.00 (finished wafer valued of $500). Another preferredcost of manufacture parameter for in situ process control is thefinishing rate. FIG. 16 illustrates the effect of a finishing rateimprovement on the cost of manufacture. FIGS. 13-16 representillustrative graphs and equations which can be used to improve finishingwith tracked information such as cost of manufacture parameters. Trackedinformation for specific workpieces and/workpiece batches can generallyimprove in situ finishing control by, for example, improving costinformation. Depending on the particular finishing conditions, anincrease in finishing rate can have a lowering effect on cost ofmanufacture due to an increase in throughput and can simultaneouslyincrease the cost of manufacture by increasing the yield loss due toincreased defect density. By using a processor, appropriate calculationscan be made in situ to improve cost of manufacture in real-time. Withoutthe processor and the ready access to preferred cost of manufactureparameters, it is difficult to properly improve the process controlparameters during real-time finishing. Cost of manufacture parametersand Cost of Ownership metrics are generally known by those skilled inthe semiconductor arts. Some preferred examples of cost of manufactureparameters comprise at least one parameter(s) selected from the groupconsisting of equipment cost ($), spares cost ($), consumables costs(such as abrasives, slurry, and/or finishing elements in $), MTBF (meantime between failure in hours), MTTR (mean time to repair in hours),scheduled preventive maintenance, raw product throughput (workpieces perhour), production tests (hours), mean time to test (hours),systems/operator, equipment yield, incoming wafer value ($), densitydefect, faulty probability, device area, and completed workpiece value($). Another set of preferred examples of cost of manufacture parameterscomprise at least one parameter(s) selected from the group consisting offixed costs, recurring costs, yield costs, tool life, throughput,composite yield, and utilization. SEMATECH has published generallywidely accepted cost of manufacture parameters and Cost of Ownershipmetrics which are included herein by reference in their entirety forguidance and use of those skilled in the semiconductor art. Further,Wright Williams and Kelly of Dublin, Calif. have published a manualentitled “Understanding and Using Cost of Ownership” (rev. 0595-1)containing cost of manufacture parameters and equations for cost ofmanufacture calculation which is also included herein by reference inits entirety for guidance and use of those skilled in the semiconductorarts. Where specific reference is made herein to a specific definitionof a particular cost of manufacture metric, applicant will use forinstance the Wright Williams and Kelly parametric yield or the SEMATECHequipment yield naming for additional specificity. Where furtherspecificity is desirable, the Wright Williams and Kelly definition shallbe used for that term for claim interpretation for that term (unless theterm is expressly defined in the claim).

A nonlimiting example of methods to make available preferred cost ofmanufacture information include use of various mathematical equations,calculating specific parameters, memory look-up tables, look-up tables,heuristics, algorithms, or databases for generating certain parameterssuch as historical performance or preferred parameters or constants,neural networks, fuzzy logic techniques for systematically computing orobtaining preferred parameter values. A memory device is preferred formemory look-tables and/or databases and the like. Memory devices aregenerally known to those skilled in the art such as volatile andnonvolatile memory devices. It is also to be understood that often asingle semiconductor wafer can undergo multiple wafer finishing steps.Each time the semiconductor wafer is finished in a wafer pass, the valueof the semiconductor wafer increases due to multiple processing stepsand thus the value of the equipment yield changes. A method whichupdates the cost of manufacture parameters consistent with the currentmanufacturing step is preferred. Current cost of manufacture parameterscan be stored in memory look-up tables or databases. Those skilled inthe arts of activity based accounting can generally setup appropriatelook-up tables containing appropriate cost of manufacture parameters touse for in situ process control given the teachings and guidance herein.The semiconductor wafer can be tracked during processing with a trackingcode. Tracked process and/or tracked cost of manufacture informationstored by semiconductor wafer (or workpiece) with this technology in amemory device such as a memory look-up table when used with the newdisclosures herein.

A method of finishing of a semiconductor wafer surface being finishedwherein a mathematical formula is used to calculate in situ at least oneimproved process control parameter value based at least in part upon atleast one cost of manufacture parameter selected from the groupconsisting of parametric yield, equipment yield, defect density, andfinishing rate and then adjusting in situ at least one improved processcontrol parameter is preferred. A method of finishing wherein at leastone cost of manufacture parameter is evaluated in situ for improvementand used at least in part to improve control is preferred and a methodof finishing wherein at least two cost of manufacture parameters areevaluated in situ for improvement and used at least in part to improvecontrol is more preferred and a method of finishing wherein at leastthree cost of manufacture parameters are evaluated in situ forimprovement and used at least in part to improve control is even morepreferred. A method of finishing of a semiconductor wafer surface beingfinished wherein a mathematical formula is used to calculate in situ atleast one improved process control parameter value based at least inpart upon at least two cost of manufacture parameters selected from thegroup consisting of parametric yield, equipment yield, defect density,and finishing rate and then adjusting in situ at least one improvedprocess control parameter is more preferred. A method of finishing of asemiconductor wafer surface being finished wherein a mathematicalformula is used to calculate in situ at least one improved processcontrol parameter value based at least in part upon at least three costof manufacture parameters selected from the group consisting ofparametric yield, equipment yield, defect density, and finishing rateand then adjusting in situ at least one improved process controlparameter is even more preferred. A method of finishing of asemiconductor wafer surface being finished wherein a mathematicalformula is used to calculate in situ at least two improved processcontrol parameter values based at least in part upon at least two costof manufacture parameters selected from the group consisting ofparametric yield, equipment yield, defect density, and finishing rateand then adjusting in situ at least those two improved process controlparameters is even more particularly preferred. These preferred cost ofmanufacture parameters are relatively difficult to improve during insitu processing because of their complexity and because they can haveopposite effects on the cost of manufacture and thus a processor isgenerally quite effective for these calculations.

Preferably, the calculation to improve cost of manufacture using thecost of manufacture parameters can be completed at least 4 times duringthe finishing cycle time and more preferably the calculations can becompleted at least 6 times during the finishing cycle time and even morepreferably the calculations can be completed at least 10 times duringthe finishing cycle time and even more particularly preferably thecalculations can be completed at least 20 times during the finishingcycle time. Preferably, the calculation to improve finishing using thein situ process information and the tracked information can be completedat least 4 times during the finishing cycle time and more preferably thecalculations can be completed at least 6 times during the finishingcycle time and even more preferably the calculations can be completed atleast 10 times during the finishing cycle time and even moreparticularly preferably the calculations can be completed at least 20times during the finishing cycle time. Preferably, the in situ processcontrol parameter value can be adjusted at least 4 times during thefinishing cycle time and more preferably at least 6 times during thefinishing cycle time and even more preferably at least 10 times duringthe finishing cycle time and even more particularly preferably at least20 times during the finishing cycle time. Preferably, the in situprocess control parameter value is controlled at least 4 times duringthe finishing cycle time and more preferably at least 6 times during thefinishing cycle time and even more preferably at least 10 times duringthe finishing cycle time and even more particularly preferably at least20 times during the finishing cycle time. Currently, a finishing cycletime of at most 6 minutes is preferred and of at most 4 minutes is morepreferred and of at most 3 minutes is even more preferred and of at most2 minutes is even more particularly preferred. Generally shorter cycletimes are preferred because this generally increases throughput andreduces costs. Currently, a finishing cycle time of at least one halfminute is preferred. Finishing cycle time is a preferred cost ofmanufacture parameter for optimization. By repeatedly calculating andadjusting the process control parameter(s) value(s), better processcontrol and improved cost of manufacture can be effected. By repeatedlycalculating and adjusting the process control parameter(s) value(s)using in situ process information and tracked information, betterprocess control, improved finishing, and improved cost of manufacturecan generally be effected. Generally, a maximum of one hundredcalculations and process control parameter adjustments during afinishing cycle time are preferred although more can be used forparticularly critical semiconductor wafer finishing. A process controlparameter which changes the friction during finishing is a preferredprocess control parameter and a process control parameter which changesthe coefficient of friction is a more preferred process controlparameter.

Preferably, the calculation to improve cost of manufacture using thecost of manufacture parameters can be completed at least 4 times duringthe refining cycle time and more preferably the calculations can becompleted at least 6 times during the refining cycle time and even morepreferably the calculations can be completed at least 10 times duringthe refining cycle time and even more particularly preferably thecalculations can be completed at least 20 times during the refiningcycle time. Preferably, the calculation to improve refining using the insitu process information and the tracked information can be completed atleast 4 times during the refining cycle time and more preferably thecalculations can be completed at least 6 times during the refining cycletime and even more preferably the calculations can be completed at least10 times during the refining cycle time and even more particularlypreferably the calculations can be completed at least 20 times duringthe refining cycle time. Preferably, the in situ process controlparameter value can be adjusted at least 4 times during the refiningcycle time and more preferably at least 6 times during the refiningcycle time and even more preferably at least 10 times during therefining cycle time and even more particularly preferably at least 20times during the refining cycle time. Preferably, the in situ processcontrol parameter value is controlled at least 4 times during therefining cycle time and more preferably at least 6 times during therefining cycle time and even more preferably at least 10 times duringthe refining cycle time and even more particularly preferably at least20 times during the refining cycle time. Currently, a refining cycletime of at most 6 minutes is preferred and of at most 4 minutes is morepreferred and of at most 3 minutes is even more preferred and of at most2 minutes is even more particularly preferred. Generally shorter cycletimes are preferred because this generally increases throughput andreduces costs. Currently, a refining cycle time of at least one halfminute is preferred. Refining cycle time is a preferred cost ofmanufacture parameter for optimization. By repeatedly calculating andadjusting the process control parameter(s) value(s), better processcontrol and improved cost of manufacture can be effected. By repeatedlycalculating and adjusting the process control parameter(s) value(s)using in situ process information and tracked information, betterprocess control, improved refining, and improved cost of manufacture cangenerally be effected. Generally, a maximum of one hundred calculationsand process control parameter adjustments during a refining cycle timeare preferred although more can be used for particularly criticalsemiconductor wafer refining. A process control parameter which changesthe friction during refining is a preferred process control parameterand a process control parameter which changes the coefficient offriction is a more preferred process control parameter.

A processor can evaluate input signals rapidly with the cost ofmanufacture parameters with algorithms, look-up tables, fuzzy logic,iterative calculation methods, and/or solving multiple simultaneousequations to develop an improved output control signal from thecontroller and/or subsystem controller.

The semiconductor industry is in a relentless journey to increasecomputing power and decrease costs. Finishing of a semiconductor waferusing in situ calculations of cost of manufacture parameters to improvefinishing control parameters can help simultaneously to decrease costand reduce unwanted defects. Using current cost of manufactureparameters along with a friction sensing method to evaluate and adjustthe boundary layer lubrication in a manner that adjustably controls thecoefficient of friction in the operative finishing interface can beparticularly effective at reducing unwanted surface defects such asmicroscratches and microchatter. This system is particularly preferredfor finishing with fixed abrasive finishing elements. In additiongenerally helping to improve such parameters as equipment yield,parametric yield, and defect density, the “cuttability” or cut rate ofthe fixed abrasive finishing element can generally be extended whichimproves uptime or equipment utilization. The coefficient of friction inthe operative finishing interface can change any number of times duringa relatively short finishing cycle time making manual calculationsineffective. Further, the semiconductor wafer cost of manufactureparameters are relatively complex to calculate and the finishing processis relatively short thus manual calculations for equipment adjustmentand control are even more difficult and ineffective. Rapid, multipleadjustments of process control parameters using process sensorsoperatively connected to a processor with access to cost of manufactureparameters are particularly preferred for the rapid in situ processcontrol which helps to increase computing power in the finishedsemiconductor wafer and decrease manufacturing costs. Thus one can moreeffectively control, preferably in situ, finishing during changes inlubricating aid changes (like composition, concentration, or operatingcondition changes) and as applied pressure or operative finishing motionchanges by using the systems taught herein. Optimizing the cost ofmanufacture during real time with preferred operative friction sensor(s)information and useful cost of manufacture information such as currentcost of manufacture information, preferably derived from individualand/or semiconductor wafer cost tracking information during manufacture,can aid in reducing costs on this relentless journey. Control of thecoefficient of friction in the operative finishing interface isparticularly useful and effective to help reduce unwanted surfacedefects, preferably when combined with real time cost of manufactureinformation, information processing capability, and real time finishingcontrol capability. Tracked information such as cost of manufactureinformation can aid in improved effectiveness of in situ control oflubrication in the operative finishing interface.

Cost of manufacture parameters can be helpful in improving yields andreducing costs during planarizing of a semiconductor wafer(s). Arecurring cost is a preferred cost of manufacture parameter. A materialcost is a preferred recurring cost. A consumable cost is a preferredrecurring cost. A maintenance cost is a preferred recurring cost. Alabor cost is a preferred recurring cost. A utility or utilities are apreferred recurring cost. Supplies are a preferred recurring cost. Asupport cost is a preferred recurring cost. A personnel cost is apreferred recurring cost. A support services cost is a preferredrecurring cost. Test wafers are a preferred cost of manufactureparameter. Fill wafers are a preferred cost of manufacture parameter. Afixed cost is a preferred cost of manufacture parameter. Depreciation isa preferred fixed cost parameter. Qualification cost is a preferredfixed cost parameter. Depreciation is a preferred fixed cost parameter.Installation is a preferred fixed cost parameter. Training is apreferred fixed cost parameter. Floor space is a preferred fixed costparameter. Utilization is a preferred cost of manufacture parameter.Scheduled maintenance is a preferred utilization cost. Unscheduledmaintenance is a preferred utilization cost. Assist time is a preferredutilization cost. Standby time is a preferred utilization cost.Production qualification time is a preferred utilization cost. Scheduledmaintenance is a preferred utilization cost. Process engineering time isa preferred utilization cost. Mean time between failure is a preferredcost of manufacture parameter. Mean time to repair is a preferred costof manufacture parameter. Mean time to test is a preferred cost ofmanufacture parameter. Change-out cost is a preferred cost ofmanufacture parameter. The change-out costs for changing from onepolishing pad to another is a non-limiting example of a change-out cost.First pass first quality yield is a preferred cost of manufactureparameter. First pass first quality yield of semiconductor wafer batchis a preferred example of a preferred first pass first quality yield.First pass first quality yield die within a semiconductor wafer is apreferred example of a preferred first pass first quality yield. Asdiscussed elsewhere herein, improving the cost of manufacture and yieldfor planarizing a semiconductor wafer and/or semiconductor die isgenerally useful and complex. As another instance, changing selected acontrol parameter(s) can shorten the life of a consumable such as apolishing pad (which raises costs) but can also enhances throughput,reduce needed floor space over time, and improve utilization. Commercialwafer fabs can produce in a general range of 20,000 to 35,000semiconductor wafers a month, thus developing with tracked information,generally useful memory-lookup tables, databases, and improvingalgorithms to improve real time process control to improve yields andlower costs. Solving of simultaneous equations in situ using selectedcost of manufacture parameters along with finishing progress informationcan also be used to improve yields and/or lower costs. Solving ofsimultaneous equations ex situ using selected cost of manufactureparameters along with finishing progress information can also be useddevelop memory look-up tables, databases, and/or to improve equationsfor use in situ (real time) to improve yields and/or lower costs.

Algorithms, memory look-up tables, databases, and methods to solveequations simultaneously are generally known. Statistical methods tomonitor manufacturing yields are generally known. FIGS. 13-16 representsome general costs, graphs, and equations for some cost of manufactureparameters for a given set of input data and can generally be modifiedby those skilled in the art for new, specific manufacturing conditionsfor specific semiconductor wafers having die. Methods for predictivecontrol are known. Methods for adaptive control are known. Modelingprocess methods to aid control are also known. Each of these can bepreferred for specific applications. U.S. Pat. Nos. 5,661,669 toMozumder, 5,740,033 to Wassick et al., 6,167,360 to Erickson et al.,6,249,712 to Boiquaye, and 6,289,508 to Erickson et al. give generalexamples for predictive control, adaptive control, and dynamic processoptimization and are included in their entirety for general guidance andappropriate modification by those skilled in the art.

In process costs tracked with activity based cost model can bepreferred. Activity based cost can measure a cost (or costs) byfollowing activities along with their associated costs (resources used)during manufacture. Activity costs comprise resource related costsincluding labor, material, consumable, and equipment related activitieswhich consume the costs. As a nonlimiting example, a resource can berefining equipment useful for planarizing, polishing, and buffingactivities. The refining equipment cost can be related to the costdrivers of planarizing, polishing, and buffing activities by an outputquantity (for example hours) consumed in each of planarizing, polishing,and buffing by cost driver per unit cost rate (for instance, $/hour ofrefining equipment used). In a similar manner, labor costs, materialcosts, and consumable costs can be assigned to activities using anappropriate cost driver(s) and output quantities. The activity costs canthen be further related to the style, type, or intermediate stage ofmanufacture of a workpiece. Different types and/or different stages ofmanufacture of a semiconductor wafer use different amounts of differentcost drivers (such as differences in planarizing, polishing, and buffingdrivers). An activity based cost model having a multiple of differentlevel of activity costs and a multiple of different cost drivers in eachof the multiple of different levels of activity costs is preferred forsemiconductor wafer refining process control. An activity cost is apreferred cost of manufacture parameter for process control. An activitycost and/or cost driver which is a mathematical composite derived fromrefining a multiplicity of workpieces are preferred. A mode, median ormean value of an activity cost and/or cost driver is a preferred exampleof a mathematical composite derived from refining a multiplicity ofworkpieces (or more preferably, workpiece batches). A multi-point movingmathematical composite (for instance a five point or ten point movingaverage) is a preferred example mathematical composite derived fromrefining a multiplicity of workpieces (or more preferably, workpiecebatches). A preferred mathematical composite is derived, at least inpart, mathematical expressions. Using a mathematical composite canfacilitate process control using statistical methods to reduce shortterm noise which can adversely affect process control. An activity costof the incremental costs associated with the specific step for instance,an interlayer dielectric (ILD) planarizing is a preferred activity costfor process control. An activity cost of the cumulative costs associatedup to and/or up to and including the specific step for instance, ILDplanarizing is a preferred activity cost for process control. Anactivity cost of the cumulative costs associated up to and including thespecific step for instance, ILD planarizing is a preferred activity costfor process control. Each can give useful information for controllingthe process control parameters. A multistage activity cost model ispreferred for refining control during semiconductor wafer manufacture.An activity cost model based at least in part on the manufacturingsequential process activities is very preferred because this can aid infurther evaluating the change(s) to a process control parameter whenevaluating an activity based cost of manufacture parameter. Historicalinformation including activity cost information is preferred to bestored in a look-up table, more preferably in a multiplicity of look-uptables. Historical performance including activity cost information canbe stored in a memory device, more preferably a multiplicity of memorydevices. Historical performance including activity cost information ispreferred to be stored in a look-up table, more preferably in amultiplicity of look-up tables. Historical information includingactivity cost information can be stored in a memory device, morepreferably a multiplicity of memory devices. Cost drivers, activityfunctions, activity costs, and different activity cost models representnonlimiting preferred historical information relating to activity costsfor storing in a look-up table or a memory device. An activity costmodel based at least in part on the manufacturing process activitiesoccurring chronologically in time is very preferred because thisfacilitates time sensitive process control with chronological activitycosts. An activity cost model based at least in part on themanufacturing process activities occurring chronologically in time andfurther having a yield model is very preferred because this facilitatestime sensitive process control with chronological activity costsincluding considerations of product yields.

Storing historical information including at least at least one cost ofmanufacture parameter in at least one lookup-table is preferred andstoring historical information including at least at least two cost ofmanufacture parameters in at least one lookup-table is more preferredand storing historical information including at least at least five costof manufacture parameters in at least one lookup-table is even morepreferred and storing historical information including at least amajority of cost of manufacture parameters in at least one lookup-tableis even more particularly preferred. Storing historical informationincluding at least one process control parameter in at least onelookup-table is preferred and storing historical information includingat least one process control parameters in at least one lookup-table ismore preferred and storing historical information including at leastfive process control parameters in at least one lookup-table is evenmore preferred and storing historical information including a majorityof the process control parameters in at least one lookup-table is evenmore particularly preferred. Historical information stored with trackinginformation related to individual workpieces is preferred and historicalinformation stored with tracking information related to semiconductorwafer batches can also be preferred. Data mining can be accomplished oninformation used previously for process control. This reduces the costof creating a new table or database for data mining. Further, the datamining results can be more readily applied to new, advanced processcontrol algorithms. A cost of manufacture forecasting model can beaccomplished on information used previously for process control. Byhaving the cost of manufacture parameters stored in this manner, animproved cost of manufacture forecasting model can be developed andimplemented. The new cost of manufacture models can be used whentransitioning from a ramp-up phase of development to a commercial phaseof development. New process control algorithms can be developed byevaluating ramp-up historical information including process controlparameters and cost of manufacture parameters and then applying the newprocess control algorithm for commercial manufacture. New processcontrol algorithms can be developed by evaluating previous historicalinformation including process control parameters and cost of manufactureparameters and then applying the new process control algorithm forfuture commercial manufacture. Thus the historical information which isstored in a look-table is preferably used for a plurality of purposes toreduce the cost of manufacture and/or improved the enterpriseprofitability. By using the historical information used for initialprocess control multiple times, additional costs to collect informationfor data mining, cost of manufacture modeling, and process controlalgorithm improvement is accomplished in a new, more effective manner togive a new lower cost result.

Process Control Parameters

Preferred process control parameters include those control parameterswhich can be changed during processing and affect workpiece finishing.Control of the operative finishing motion is a preferred process controlparameter. Examples of preferred operative finishing motions includerelative velocity, pressure, and type of motion. Examples of preferredtypes of operative finishing motion include planar finishing motion,linear motion, vibrating motion, oscillating motion, and orbital motion.Finishing temperature is a preferred process control parameter.Finishing temperature can be controlled by changing the heat supplied tothe workpiece holder (for instance with heating or cooling fluids in theoptional passage ways. Heat or cooling can also be supplied to thefinishing composition. Alternately, friction can also change thefinishing temperature and can be controlled by changes in lubrication,applied pressure during finishing, and relative operative finishingmotion velocity. Friction can be changed locally by changing thestiffness of the finishing element and/or the organic boundary layerlubrication. Changes in lubricant can be effected by changing finishingcomposition(s) and/or feed rate(s). If the lubricant is dispersed in thefinishing element, lubrication can be changed, for instance, byadjusting the finishing pressure or changing finishing elements duringthe finishing cycle time. A preferred group of process controlparameters consists of parameters selected from the group consisting ofwafer velocity relative to the finishing element finishing surface,relative operative finishing velocity, finishing pattern, finishingtemperature, force exerted on the operative finishing interface,finishing composition, finishing composition feed rate, and finishingpad conditioning.

A preferred group of magnetic process control parameters consist ofparameters selected from the group consisting of the amount of magneticcoupling, magnetically induced operative finishing motions, andmagnetically induced operative finishing pressure. A preferred group ofmagnetic process control parameters consist of parameters selected fromthe group consisting of the amount of magnetic coupling, magneticallyinduced operative finishing motions, and magnetically induced operativefinishing down force. Changing at least one magnetic process controlparameter during finishing is preferred and changing a plurality ofmagnetic process control parameters during finishing is more preferred.Changing at least one magnetically induced operative finishing motionduring finishing is preferred and changing a plurality of magneticallyinduced operative finishing motions during finishing is more preferred.Changing at least one magnetically induced operative finishing pressureduring finishing is preferred and changing a plurality of magneticallyinduced operative finishing pressures during finishing is morepreferred. Controlling at least one magnetic process control parameterduring finishing is preferred and controlling a plurality of magneticprocess control parameters during finishing is more preferred.Controlling at least one magnetically induced operative finishing motionduring finishing is preferred and controlling a plurality ofmagnetically induced operative finishing motions during finishing ismore preferred. Controlling at least one magnetically induced operativefinishing pressure during finishing is preferred and controlling aplurality of magnetically induced operative finishing pressures duringfinishing is more preferred. Making these changes in real time with asubsystem controller is particularly preferred.

Process control parameters for electro-refining can be selected from thegroup consisting of applied voltage(s), applied current(s), ionicstrength, temperature, operative refining motion, secondary operativerefining motion(s) or applied energies (such abrasive motion(s) orenergy), ionic strength of the refining composition, pH of the refiningcomposition, selected elemental ionic strength in the refiningcomposition, and separation distance of the operating electrodes ispreferred. Control of the applied electric field is a preferred processcontrol parameter. Control of the current density is a preferred processcontrol parameter. Control of the applied voltage is a preferred processcontrol parameter. Control of the applied voltage at a working electrodeis a preferred nonlimiting example of a controlled applied voltage.Control of the pH of the refining composition is a preferred processcontrol parameter. Control of particular ions (e.g. copper ions) in therefining composition is a preferred process control parameter. Controlof the pH of the refining composition is a preferred process controlparameter. Control of the operative refining motion is a preferredprocess control parameter. Down force is a preferred example of a partof the operative refining motion. Relative velocity is a preferredexample of a part of the operative refining motion. Continuous motionand non-continuous motion is a preferred example of a part of theoperative refining motion. Control of a plurality of operative refiningmotions is a preferred process control parameter. Control of a appliedabrasive energy during electro-refining (or an electro-refining step) isa preferred process control parameter. Control of a tribochemicalreaction(s) during electro-refining (or an electro-refining step) is apreferred process control parameter. Control of a reaction(s) duringelectro-refining (or an electro-refining step) is a preferred processcontrol parameter. Combinations of these can also be used. With aplurality of electro-refining element, a plurality of different appliedcurrents can be used. With a plurality of electro-refining element, aplurality of independently controlled applied currents can be used. Witha plurality of currents, generally a plurality of power supplies areused. A process model for electro-refining such as using the number ofCoulumbs or Faraday's law are generally know to those skilled in theart. Historical performance and information can also be used to developor refine a process model. A process model is preferred for control. Acontrol subsystem having an operative sensor, a processor, and acontroller is preferred and discussed in more detail elsewhere herein.Control of electro-refining can increase manufacturing yields, enhanceversatility, and reduce costs.

Determining a change for a process control parameter at least 4 timesduring the refining cycle time is preferred and at least 6 times duringthe refining cycle time is more preferred and at least 10 times duringthe refining cycle time is even more preferred and at least 20 timesduring the refining cycle time is even more particularly preferred.Determining a change for a process control parameter in situ processinformation and the tracked information at least 4 times during therefining cycle time is preferred and at least 6 times during therefining cycle time is more preferred and at least 10 times during therefining cycle time is even more preferred and at least 20 times duringthe refining cycle time is even more particularly preferred. Changingprocess control parameter value at least 4 times during the refiningcycle time is preferred and at least 6 times during the refining cycletime is more preferred and at least 10 times during the refining cycletime is even more preferred and at least 20 times during the refiningcycle time is even more particularly preferred. Controlling the processcontrol parameter value at least 4 times during the refining cycle timeis preferred and at least 6 times during the refining cycle time is morepreferred and at least 10 times during the refining cycle time is evenmore preferred and at least 20 times during the refining cycle time iseven more particularly preferred. Currently, a refining cycle time of atmost 6 minutes is preferred and of at most 4 minutes is more preferredand of at most 3 minutes is even more preferred and of at most 2 minutesis even more particularly preferred. By repeatedly determining, changingand controlling through adjusting the process control parameter(s)value(s), better process control and improved cost of manufacture can beeffected. By repeatedly calculating and adjusting the process controlparameter(s) value(s) using in situ process information and trackedinformation, better process control, improved refining, and improvedcost of manufacture can generally be effected. Generally, a maximum ofone hundred calculations and process control parameter adjustmentsduring a refining cycle time are preferred although more can be used forparticularly critical semiconductor wafer refining (and as processorspeeds and controllers improve). A process control parameter whichchanges the friction, refining rate, cut rate, or tribochemical reactionrate during refining are preferred non-limiting examples of a refiningcycle time which can benefit a process control parameter.

Determining a change for a process control parameter at least 4 timesduring the non-steady state process time is preferred and at least 6times during the non-steady state process time is more preferred and atleast 10 times during the non-steady state process time is even morepreferred and at least 20 times during the non-steady state process timeis even more particularly preferred. Determining a change for a processcontrol parameter in situ process information and the trackedinformation at least 4 times during the non-steady state process time ispreferred and at least 6 times during the non-steady state process timeis more preferred and at least 10 times during the non-steady stateprocess time is even more preferred and at least 20 times during thenon-steady state process time is even more particularly preferred.Changing process control parameter value at least 4 times during thenon-steady state process time is preferred and at least 6 times duringthe non-steady state process time is more preferred and at least 10times during the non-steady state process time is even more preferredand at least 20 times during the non-steady state process time is evenmore particularly preferred. Controlling the process control parametervalue at least 4 times during the non-steady state process time ispreferred and at least 6 times during the non-steady state process timeis more preferred and at least 10 times during the non-steady stateprocess time is even more preferred and at least 20 times during thenon-steady state process time is even more particularly preferred.Currently, a non-steady state process time of at most 3 minutes ispreferred and of at most 2 minutes is more preferred and of at most 1.5minutes is even more preferred and of at most 1 minute is even moreparticularly preferred. By repeatedly determining, changing andcontrolling through adjusting the process control parameter(s) value(s),better process control and improved cost of manufacture can be effected.By repeatedly calculating and adjusting the process control parameter(s)value(s) using in situ process information and tracked information,better process control, improved refining, and improved cost ofmanufacture can generally be effected. Generally, a maximum of onehundred calculations and process control parameter adjustments during anon-steady state process time are preferred although more can be usedfor particularly critical semiconductor wafer refining (and as processorspeeds and controllers improve). A process undergoing differentialfrictional changes during refining can be a preferred non-limitingexample of a non-steady state change which can benefit from thenon-steady state a process control methods herein.

Determining a change for a process control parameter at least 4 timesduring the non-equilibrium process time is preferred and at least 6times during the non-equilibrium process time is more preferred and atleast 10 times during the non-equilibrium process time is even morepreferred and at least 20 times during the non-equilibrium process timeis even more particularly preferred. Determining a change for a processcontrol parameter in situ process information and the trackedinformation at least 4 times during the non-equilibrium process time ispreferred and at least 6 times during the non-equilibrium process timeis more preferred and at least 10 times during the non-equilibriumprocess time is even more preferred and at least 20 times during thenon-equilibrium process time is even more particularly preferred.Changing process control parameter value at least 4 times during thenon-equilibrium process time is preferred and at least 6 times duringthe non-equilibrium process time is more preferred and at least 10 timesduring the non-equilibrium process time is even more preferred and atleast 20 times during the non-equilibrium process time is even moreparticularly preferred. Controlling the process control parameter valueat least 4 times during the non-equilibrium process time is preferredand at least 6 times during the non-equilibrium process time is morepreferred and at least 10 times during the non-equilibrium process timeis even more preferred and at least 20 times during the non-equilibriumprocess time is even more particularly preferred. Currently, anon-equilibrium process time of at most 3 minutes is preferred and of atmost 2 minutes is more preferred and of at most 1.5 minutes is even morepreferred and of at most 1 minute is even more particularly preferred.By repeatedly determining, changing and controlling through adjustingthe process control parameter(s) value(s), better process control andimproved cost of manufacture can be effected. By repeatedly calculatingand adjusting the process control parameter(s) value(s) using in situprocess information and tracked information, better process control,improved refining, and improved cost of manufacture can generally beeffected. Generally, a maximum of one hundred calculations and processcontrol parameter adjustments during a non-equilibrium process time arepreferred although more can be used for particularly criticalsemiconductor wafer refining (and as processor speeds and controllersimprove). A process undergoing differential frictional changes duringrefining can be a preferred non-limiting example of a non-equilibriumchange which can benefit from the non-equilibrium a process controlmethods herein.

An advantage of a preferred embodiment is the additional degree ofcontrol it gives to the operator and/or a computer performingplanarization and/or polishing. To better utilize this control, the useof feedback information to control the finishing control parameters ispreferred and in situ control is more preferred. Controlling thefinishing control parameters selected from the group consisting ofalternate finishing composition feed rates, alternate finishingcomposition concentration, operative finishing motion, and operativefinishing pressure is preferred to improve control of the finishing ofthe workpiece surface being finished and in situ control is moreparticularly preferred. Another preferred example of a finishing controlparameter is to use a different finishing element for a differentportion of the finishing cycle time such as one finishing element forthe planarizing cycle time and a different finishing element for thepolishing cycle time. Workpiece film thickness, measuring apparatus, andcontrol methods are preferred methods of control. Mathematical equationsincluding those developed based on process results can be used.Mathematical algorithms for control based on process performance resultscan be preferred. An empirically-based process model can be preferred.An empirically based process model developed at least in part onhistorical performance is preferred. A first principles-based processmodel can also be used for control. Using at least in part a firstprinciples process model and at least in part an empirically basedprocess model can be preferred for process control. A yield model canalso be preferred for process control. A yield model based at least inpart on historical performance is currently preferred. A recipe forfinishing a semiconductor wafer can also be used. A recipes can bedeveloped and/or modified based on historical performance. Multiplerecipes stored in the look-up tables are preferred. A process model,more preferably multiple process models can be stored in the look-uptables. A processor having access to the look-up tables is preferred.Yield models are generally known to those skilled in the semiconductorwafer manufacturing arts. Process models are generally known to thoseskilled in the semiconductor wafer manufacturing arts. Finishinguniformity parameters selected from the group consisting of TotalThickness Variation (TTV), Focal plane deviation (FPD), Within-WaferNon-Uniformity (WIW NU), and surface quality are preferred. Average cutrate is a preferred finishing rate control parameter. Average finishingrate is a preferred finishing rate control parameter. A preferredaverage cut rate can be the average cut rate across the surface of asemiconductor wafer at a particular time. A preferred average cut ratecan be the average cut rate across the uniform region of the surface ofa semiconductor wafer at a particular time (for example a uniformcompositional region). Controlling finishing for at least a portion ofthe finishing cycle time with a finishing sensor subsystem to adjust insitu at least one finishing control parameter that affects finishingresults is a preferred method of control finishing. Information feedbacksubsystems are generally known to those skilled in the art. Illustrativenon limiting examples of wafer process control methods include U.S. Pat.No. 5,483,129 to Sandhu issued in 1996, U.S. Pat. No. 5,483,568 to Yanoissued in 1996, U.S. Pat. No. 5,627,123 to Mogi issued in 1997, U.S.Pat. No. 5,653,622 to Drill issued in 1997, U.S. Pat. No. 5,657,123 toMogi issued in 1997, U.S. Pat. No. 5,667,629 to Pan issued in 1997, andU.S. Pat. No. 5,695,601 to Kodera issued in 1997 and are included hereinby reference in their entirety for guidance and modification by thoseskilled in the art and are included herein by reference in theirentirety.

Processor controlled finishing can improve the control and versatilityof magnetic finishing and can help reduce unwanted surface defectsand/or help reduce the finishing time.

Processor

A processor is preferred to help evaluate the workpiece finishing sensorinformation. A processor can be a microprocessor, an ASIC, or some otherprocessing means such as a computer. The processor preferably hascomputational and digital capabilities. Non limiting examples ofprocessing information include use of various mathematical equations,calculating specific parameters, memory look-up tables or databases forgenerating certain parameters such as historical performance orpreferred parameters or constants, neural networks, fuzzy logictechniques for systematically computing or obtaining preferred parametervalues. Input parameter(s) can include information on current wafersbeing polished such as uniformity, expected polish rates, preferredlubricants(s), preferred lubricant concentrations, entering filmthickness and uniformity, workpiece pattern. Further preferrednon-limiting processor capabilities including adding, subtracting,multiplying, dividing, use functions, look-up tables, noise subtractiontechniques, noise minimization techniques, comparing signals, andadjusting signals in real time from various inputs and combinationsthereof.

Further general computing techniques such neural networks andstatistical process control are generally known to those skilled in thesemiconductor wafer processing arts. General computing techniques suchas neural networks (including examples learning neural networks), fuzzylogic, data mining, model control, and statistical process control(including examples of nonconstant mean of response variables) aregenerally known to those skilled in the various arts. Non-limitingillustrative examples of neural networks, fuzzy logic, data mining, useof cost of manufacture information, and statistical process control arefound in U.S. Pat. Nos. 5,774,833 to Baba et. al., 5,809,699 to Wong etal., 5,813,002 to Agrawal et al., 5,813,002 to Agrawal et al., 5,818,714to Zou et al., 5,822,220 to Baines, 5,828,812 to Khan et al., 5,830,955to Takeda et al., 5,832,468 to Miller et al., 5,832,466 to Feldgajer,5,841,671 to Furumoto 5,841,651 to Fu, 5,978,398 to Halverson and6,568,989 to Molnar and are included herein by reference in theirentirety for all purposes and for general guidance and modification bythose skilled in the arts using the teachings herein.

Further, the processor can be used to evaluate and control the magneticdrivers, magnetic coupling, magnetically induced operative finishingpressure, magnetically induced operative finishing motion. Further, theprocessor can be used select preferred times to change the magneticfinishing elements (either or both between and within workpiecefinishing cycles).

Memory look-up tables and databases are generally made accessiblethrough memory devices. The memory devices can be integral with theprocess or operatively connected to the processor.

Use of Information for Feedback and Controller

Controllers to control the finishing of workpieces are generally knownin the art. Controllers generally use information at least partiallyderived from the processor to make changes to the process controlparameters. A processor is preferably operatively connected to a sensorto gain current information about the process and the processor is alsooperatively connected to a controller which preferably controls thefinishing control parameters. As used herein, a control subsystem is acombination of an operative sensor operatively connected to a processorwhich is operatively connected to a controller which in turn can changerefining and/or finishing control parameters, and preferably magneticfinishing control parameters. A control subsystem having a plurality ofoperative sensors is more preferred. A workpiece sensor is a preferredoperative sensor. A magnetic driver sensor is a preferred operativesensor. A magnetic finishing element sensor is a preferred operativesensor. A refining composition sensor is a preferred operative sensor. Acontrol subsystem having a workpiece sensor, a magnetic driver sensor,and a magnetic refining element sensor is a preferred control subsystem.A control subsystem having a plurality of operative workpiece sensors, aplurality of operative magnetic driver sensors, and a plurality ofoperative magnetic refining element sensors is a more preferred controlsubsystem. A control subsystem having at least three of operativeworkpiece sensors, at least three of operative magnetic driver sensors,and a plurality of operative magnetic refining element sensors is aneven more preferred control subsystem. A control subsystem having aworkpiece sensor, a magnetic driver sensor, and a magnetic finishingelement sensor is a preferred control subsystem. A control subsystemhaving a plurality of operative workpiece sensors, a plurality ofoperative magnetic driver sensors, and a plurality of operative magneticfinishing element sensors is a more preferred control subsystem. Acontrol subsystem having at least three of operative workpiece sensors,at least three of operative magnetic driver sensors, and a plurality ofoperative magnetic finishing element sensors is an even more preferredcontrol subsystem. An optical sensor is a preferred operative sensor. Afriction sensor is a preferred operative sensor. An optical sensor whichdetects reflected light and/or changes in light is a preferred operativesensor. Changes in light due to reflection, absorption, fluorescence,and/or phosphorescence are preferred changes in light to measure with anoperative sensor. Changes in emission due to reflection, absorption,fluorescence, temperature (and/or temperature changes), and/orphosphorescence are preferred changes in light to measure with anoperative sensor. An optical sensor which measure film thickness is apreferred operative sensor. Operative sensors are generally known tothose skilled in the semiconductor wafer finishing arts.

An advantage of this invention in generally preferred embodiments is theadditional degree of control it gives to the operator performingplanarization and/or polishing. To better utilize this control, the useof feedback information to control the finishing control parameters ispreferred and in situ control is more preferred. Controlling thefinishing control parameters selected from the group consisting offinishing composition feed rates, finishing composition concentration,operative finishing motion, and operative finishing pressure ispreferred to improve control of the finishing of the workpiece surfacebeing finished and in situ control is more particularly preferred.Another preferred example of a finishing control parameter is to use adifferent finishing element for a different portion of the finishingcycle time such as one finishing element for the planarizing cycle timeand a different finishing element for the polishing cycle time. Anotherpreferred example of an finishing control parameter is to use adifferent finishing elements simultaneously during a portion of thefinishing cycle time such as finishing elements with different finishingsurfaces and/or different magnetic susceptibilities and/or differentfinishing surface sizes. Workpiece film thickness, measuring apparatus,and control methods are preferred methods of control. Mathematicalequations including those developed based on process results can beused. Finishing uniformity parameters selected from the group consistingof Total Thickness Variation (TTV), Focal plane deviation (FPD),Within-Wafer Non-Uniformity (WIW NU), and surface quality are preferred.Average cut rate is a preferred finishing rate control parameter.Average finishing rate is a preferred finishing rate control parameter.Controlling finishing for at least a portion of the finishing cycle timewith a finishing sensor subsystem to adjust in situ at least onefinishing control parameter that affects finishing results is apreferred method of control finishing. Information feedback subsystemsare generally known to those skilled in the art. Illustrative nonlimiting examples of wafer process control methods include U.S. Pat. No.5,483,129 to Sandhu issued in 1996, U.S. Pat. No. 5,483,568 to Yanoissued in 1996, U.S. Pat. No. 5,627,123 to Mogi issued in 1997, U.S.Pat. No. 5,653,622 to Drill issued in 1997, U.S. Pat. No. 5,657,123 toMogi issued in 1997, U.S. Pat. No. 5,667,629 to Pan issued in 1997, andU.S. Pat. No. 5,695,601 to Kodera issued in 1997 are included herein forguidance and modification by those skilled in the art and are includedherein by reference in their entirety.

Controlling at least one of the finishing control parameters usingworkpiece sensor information combined with workpiece finishing sensorinformation is preferred and controlling at least two of the finishingcontrol parameters using secondary friction sensor information combinedwith workpiece finishing sensor information is more preferred. Using aelectronic finishing sensor subsystem to control the finishing controlparameters is preferred. Feedback information selected from the groupconsisting of finishing rate information and product quality informationsuch as surface quality information is preferred. Non-limiting preferredexamples of process rate information include polishing rate, planarizingrate, and workpieces finished per unit of time. Non-limiting preferredexamples of quality information include first pass first quality yields,focal plane deviation, total thickness variation, measures of nonuniformity. Non-limiting examples particularly preferred for electronicsparts include Total Thickness Variation (TTV), Focal plane deviation(FPD), Within-Wafer Non-Uniformity (WIW NU), and surface quality.

In situ process control systems relying on workpiece finishing sensorsare generally known to those skilled in the CMP industry. Commercial CMPequipment advertised by Applied Materials and IPEC reference some ofthis equipment.

A preferred finishing control subsystem (and/or control subsystem) hasreal time access to tracked information on the workpiece being finishedto improve control of finishing control parameters in real time (insitu) during the finishing cycle time (or a portion of the finishingcycle time). A finishing control subsystem (and/or control subsystem)having at least three operative process sensors for sensing in situprocess information, access to the tracked information; and a processorto evaluate the in situ process information and tracked information ispreferred.

Cost of manufacture information is also preferred information forcontrol. Cost of manufacture information comprises preferred informationfor tracking. Finishing uniformity parameters selected from the groupconsisting of Total Thickness Variation (TTV), Focal plane deviation(FPD), Within-Wafer Non-Uniformity (WIW NU), and surface quality can beinformation for tracking. Total Thickness Variation (TTV), Focal planedeviation (FPD), Within-Wafer Non-Uniformity (WIW NU), and surfacequality are illustrative preferred data types for tracking, particularlyfor multi-level semiconductor wafers where one levels data can behelpful for in situ control while finishing a different level. Types ofcost of manufacture information can be preferred data types.Semiconductor wafer film or layer thickness is another illustrativeexample of data type of tracked information for in situ control sincethis can also help optimizing the in situ adjustment of finishingcontrol parameters which change the local and/or macro coefficient offriction can generally aid finishing control.

The use of aqueous lubricating compositions in finishing, particularlythose having boundary lubricants, in a preferred embodiment includingoperative friction sensor(s), friction sensor controllers, and frictionsensor subsystems can be used to improve finishing. Supplying a marginallubricant, preferably a lubricating film, and more preferably an organiclubricating boundary layer, with in situ process control to control thefraction of semiconductor wafer surface area free of organic boundarylayer lubrication is preferred.

A mathematical equation developed from laboratory experience, semiworksexperience, test wafer experience, and/or actual production can bepreferred. Curve fitting to determine mathematical equations based onlaboratory experience, semiworks experience, test wafer experience,and/or actual production are generally known to those skilled in thesemiconductor arts. Curve fitting to determine mathematical formulasusing historical performance can be preferred. Mathematical equationscan be used also generally for interpolation and extrapolation. Multiplemathematical equations with multiple unknowns can be solved or resolvedin real time for improved process control with a processor. Differentialinformation from multiple workpiece sensors and/or friction sensors cangenerally be used to improve real time (in situ) control with aprocessor. A lubrication control subsystem, a friction sensor subsystem,a finishing control subsystem, and a control subsystem can generally usemathematical equations to aid control. A friction sensor subsystemhaving at least one friction sensors is preferred and having at leasttwo friction sensors is more preferred. A friction sensor subsystemhaving at least one friction sensor probe is preferred and having atleast two friction sensor probes is more preferred.

The in situ process control methods having features and benefits of thepreferred methods of this invention are new and useful in the magneticfinishing elements industry.

Refining and Finishing Element Conditioning

A finishing element can be conditioned before use or between thefinishing of workpieces. Conditioning a finishing element is generallyknown in the CMP field and generally comprises changing the finishingelement finishing surface in a way to improve the finishing of theworkpiece. As an example of conditioning, a finishing element having nobasic ability or inadequate ability to absorb or transport an alternatefinishing composition can be modified with an abrasive finishing elementconditioner to have a new texture and/or surface topography to absorband transport the alternate finishing composition. As a non-limitingpreferred example, an abrasive finishing element conditioner having amechanical mechanism to create a finishing element finishing surfacewhich more effectively transports the alternate finishing composition ispreferred. The abrasive finishing element conditioner having amechanical mechanism to create a finishing element finishing surfacewhich more effectively absorbs the alternate finishing composition isalso preferred. An abrasive finishing element conditioner having amechanical mechanism comprising a plurality of abrasive points whichthrough controlled abrasion can modify the texture or surface topographyof a finishing element finishing surface to improve alternate finishingcomposition absorption and/or transport is preferred. An abrasivefinishing element conditioner having a mechanical mechanism comprising aplurality of abrasive points comprising a plurality of hard abrasivessuch as diamonds which through controlled abrasion can modify thetexture and/or surface topography of a finishing element finishingsurface to improve alternate finishing composition absorption and/ortransport is preferred.

Modifying a virgin finishing element finishing surface with a finishingelement conditioner before use is generally preferred. Modifying afinishing element finishing surface with a finishing element conditionera plurality of times is also preferred. Conditioning a virgin finishingelement finishing surface can improve early finishing performance of thefinishing element by exposing any lubricants in the finishing elementand can expose new fixed abrasive particles which can also changefinishing. Nonlimiting examples of textures and topographies useful forimproving transport and absorption of the alternate finishingcomposition and/or finishing element conditioners and general use aregiven in U.S. Pat. Nos. 5,216,843 to Breivogel, 5,209,760 to Wiand,5,489,233 to Cook et. al., 5,664,987 to Renteln, 5,655,951 to Meikle et.al., 5,665,201 to Sahota, and 5,782,675 to Southwick and are includedherein by reference in their entirety for general background andguidance and modification by those skilled in the art.

Further Comments

Some particularly preferred embodiments are now discussed in additionaldetail. The interface between the finishing element finishing surfaceand the workpiece being finished is referred to herein as the operativefinishing interface.

Control with a finishing process subsystem having at least three processsensors can be used to improve finishing by sensing multiple changes inthe operative finishing interface during real time and then calculatingand adjusting for these changes in real time (in situ). By combining theinformation from at least three in situ process sensors with trackedinformation in real time, the semiconductor wafer tracked informationsuch as micro and macro topography can be used to further enhancefinishing control. Different data types can be preferred in the trackedinformation such as data types relating to prior process conditionsand/or micro or macro topography information. This process informationwhen coupled with tracked information can help improve in situ controlwhen finishing a workpiece such as semiconductor wafer with lubricant.By controlling the change in the coefficient of friction in theoperative interface multiple times during the finishing cycle time,finishing can generally be improved.

Polymeric abrasive asperities can be preferred for some finishingoperations. Inorganic abrasive asperities can be preferred also for somefinishing operations. Polymeric abrasive asperities, such as abrasivepolymeric particles and/or abrasive polymeric material, are generallypreferred for finishing softer workpieces and inorganic abrasiveasperities are generally preferred for finishing harder workpiecesurfaces. An abrasive finishing surface capable of inducing frictionalwear to the workpiece surface being finished is preferred and anabrasive finishing surface capable of inducing tribochemical reactionson the workpiece surface during finishing is also preferred. A wearinducing finishing surface capable of inducing frictional wear to theworkpiece surface being finished is even more preferred and a wearinducing finishing surface capable of inducing tribochemical reactionson the workpiece surface during finishing is also even more preferred. Awear inducing finishing surface capable of inducing plastic deformationof a workpiece surface comprised of a polymer is preferred and a wearinducing finishing surface capable of inducing plastic deformation of aworkpiece surface comprised at least in part of an organic syntheticpolymer is more preferred.

A preferred finishing element has a finishing surface comprising amultiphase polymeric finishing surface. A more preferred finishingelement has a finishing surface comprising a multiphase polymericfinishing surface having at least two synthetic polymers (e.g. separatepolymeric components). An even more preferred finishing element has afinishing comprising a multiphase polymeric finishing surface having atleast three synthetic polymers (e.g. separate polymeric components).

By increasing the stiffness of the finishing element finishing surface,the pressure applied to the unwanted raised region can be increased.Flexural modulus as measured by ASTM 790 B at 73 degrees Fahrenheit is auseful guide to help raise the stiffness of a polymer finishing element.By adjusting the flexural modulus as measured by ASTM 790 B at 73degrees Fahrenheit the pressure can be increased on the unwanted raisedregions to increase finishing rates measured in Angstroms per minute.Applying at least two times higher pressure to the unwanted raisedregion when compared to the applied pressure in a lower region proximateunwanted raised region is preferred and applying at least three timeshigher pressure to the unwanted raised region when compared to theapplied pressure in a lower region proximate unwanted raised region ismore preferred and applying five times higher pressure to the unwantedraised region when compared to the applied pressure in a lower regionproximate unwanted raised region is even more preferred. Because thelower region proximate the unwanted raised region can have a very lowpressure, at most 100 times higher pressure in the unwanted raisedregions compared to the pressure in a lower region proximate theunwanted raised region is preferred and at most 50 times higher pressurein the unwanted raised regions compared to the pressure in a lowerregion proximate the unwanted raised region is more preferred. Applying2 to 100 times higher pressure to the unwanted raised region whencompared to the applied pressure in a lower region proximate unwantedraised region is preferred and applying at least 3 to 100 times higherpressure to the unwanted raised region when compared to the appliedpressure in a lower region proximate unwanted raised region is morepreferred and applying 5 to 50 times higher pressure to the unwantedraised region when compared to the applied pressure in a lower regionproximate unwanted raised region is even more preferred.

Applying an operative finishing motion wherein the unwanted raisedregions have a temperature of at least 3 degrees centigrade higher thanin the proximate low local region is preferred and finishing wherein theunwanted raised regions have a temperature of at least 7 degreescentigrade higher than in the proximate low local region is morepreferred and finishing wherein the unwanted raised regions have atemperature of at least 10 degrees centigrade higher than in theproximate low local region is even preferred. Finishing wherein theunwanted raised regions have a temperature from 3 to 50 degreescentigrade higher than in the proximate low local region is preferredand finishing wherein the unwanted raised regions have a temperaturefrom 7 to 45 degrees centigrade higher than in the proximate low localregion is more preferred and finishing wherein the unwanted raisedregions have a temperature of from 10 to 40 degrees centigrade higherthan in the proximate low local region is even more preferred. Byadjusting the flexural modulus of the finishing element finishingsurface, lubricating film layer and preferably lubricating boundarylayer, and the other control parameters discussed herein, finishing andplanarization of semiconductor wafer surfaces can be accomplished. Byadjusting the flexural modulus of the finishing element finishingsurface, lubricating boundary layer, and the other control parametersdiscussed herein, finishing and planarization of semiconductor wafersurfaces can be accomplished.

An organic lubricating film which interacts with the semiconductor wafersurface is preferred. An organic lubricating film which adheres to thesemiconductor wafer surface is preferred. An organic lubricating filmwhich interacts with and adheres to the semiconductor wafer surface ismore preferred. An organic lubricating film which interacts with theuniform region of the semiconductor wafer surface is preferred. Anorganic lubricating film which adheres to the uniform region of thesemiconductor wafer surface is preferred. An organic lubricating filmwhich interacts with and adheres to the uniform region of thesemiconductor wafer surface is more preferred. A uniform functionalregion is a preferred uniform region. A conductive region is a preferreduniform functional region. A nonconductive region is a preferred uniformfunctional region. By having the organic lubricating film interact withand adhere to a uniform region of the semiconductor wafer surface,localized finishing control can be improved and unwanted surface defectscan generally be reduced using the teaching and guidance herein.

Controlling the thickness of a lubricating film by changing at least onelubrication control parameter in a manner that changes the coefficientof friction in at least two different regions in the operative finishinginterface in response to an in situ control signal is preferred.Controlling the thickness of the lubricating film by changing at leasttwo process control parameters in situ based on feed back informationfrom a lubrication control subsystem having a friction sensor is alsopreferred. Controlling at least once the thickness of the lubricatingfilm which changes the coefficient of friction in the operativefinishing interface by changing at least one process control parameterin situ based on feed back information from a control subsystem duringthe finishing cycle time is preferred. A semiconductor wafer surfacehaving at least a first region wherein the lubricating film is at mostone half the molecular layer thickness compared to the lubricating filmthickness on a second, different region is preferred and a semiconductorwafer surface having at least a first region wherein the lubricatingfilm thickness is at most one third the molecular layer thicknesscompared to the lubricating film on a second, different region is morepreferred when controlling the coefficient of friction, particularlywhen controlling the changes in the coefficient of friction. Controllingthe thickness of the lubricating film by changing at least one processcontrol parameter in situ based on feed back information from a controlsubsystem during the finishing cycle time and wherein the controlsubsystem tracks and updates the feed back information for finishing aplurality of the metal layers is even more preferred for semiconductorwafers having multiple functional levels. An organic lubricating film ispreferred. Lubricating films, preferably lubricating boundary layers,because of the small amount of preferred lubricant, are particularlyeffective lubricants for inclusion in finishing elements and/or theoperative finishing interface.

A preferred control subsystem has access to cost of manufactureparameters, preferably useful cost of manufacture parameters, and evenmore preferably trackable and useful cost of manufacture parameters. Apreferred example of generally useful cost of manufacture information iscurrent cost of manufacture information which has been tracked and morepreferably updated using generally known activity based accountingtechniques. Another preferred example of useful cost of manufactureparameters is the cost of manufacture of manufacturing steps whichpreceded the current finishing step such as prior finishing steps,metallization steps, or interlayer dielectric steps. Another preferredexample of useful cost of manufacture parameters is the cost ofmanufacturing steps which occur after the current finishing step such aslater finishing steps, metallization steps, or interlayer dielectricsteps. The current finishing step can affect the cost of manufacture ofa later step because some defects such generally poor planarity canadversely impact latter manufacturing step costs such as by negativityimpacting latter step yields. A finishing control subsystem (and/or afriction sensor subsystem and/or control subsystem) having access tocost of manufacture parameters is preferred and having access to currentcost of manufacture parameters is more preferred and having trackableinformation is even more preferred.

Evaluating finishing control parameters in situ for improved adjustmentusing finishing control is preferred and using the finishing controlparameters in situ at least in part for this improved adjustment offinishing control is more preferred. Evaluating finishing controlparameters in situ with tracked information for improved adjustment offinishing control is preferred and using the finishing controlparameters in situ at least in part for this improved adjustment offinishing control is more preferred. Cost of manufacture information isan example of preferred tracked information. Prior steps such asmetallizing steps, annealing steps, insulating layers steps includenonlimiting examples of preferred tracked information. Prior steps canimpact the preferred in situ control of finishing control parameterssuch as, but not limited to, lubricating changes to the operativefinishing interface, preferred pressures, and preferred coefficient offriction (either regional or across the operative finishing interface.For instance, if the metal layer has larger crystals due to the type ofannealing which are subject to “pickout defects”, lower a lowercoefficient of friction in the conductive region (such as copper orcopper alloy) can be preferred. In another application, thesemiconductor can have multiple layers of porous low-k insulating layerswhich have lower tensile strengths and can form unwanted defects ifsubjected to high forces of friction during finishing. Changing thelubricating of the operative finishing interface can reduce unwanteddamage to the porous low-k layers. In another application, the interfacebetween a conductive layer and a nonconductive layer can be of lowerstrength and thus again high forces of friction in the operativefinishing interface can form unwanted defects which can cause unwantedyield losses during manufacture. Changing the finishing controlparameters to reduce the coefficient of friction can aid in reducingunwanted yield losses. Thus tracked information can be used in situ toimprove process control during finishing with a finishing controlsubsystem (and/or control subsystem). Providing a lubricant to theoperative finishing interface comprising the interface formed betweenthe abrasive finishing element finishing surface and the semiconductorwafer surface being finished is preferred. Providing a finishing controlsubsystem having at least two operative process sensors for sensing insitu process information and having access to the tracking informationis preferred and providing a finishing control subsystem having at leastthree operative process sensors for sensing in situ process informationand having access to the tracking information is more preferred andproviding a finishing control subsystem having at least five operativeprocess sensors for sensing in situ process information and havingaccess to the tracking information is even more preferred. A finishingcontrol subsystem can be a preferred control subsystem. Changing acontrol parameter in response to the in situ process information andtracking information which changes the coefficient of friction and/ortangential force of friction during at least a portion of the finishingcycle time is preferred and which changes the coefficient of frictionand/tangential force of friction in a uniform region of the workpiecesurface is more preferred and which changes the coefficient of frictionand/tangential force of friction in a plurality uniform regions of theworkpiece surface is even more preferred.

A method which updates the cost of manufacture control parameters,look-up tables, algorithms, or control logic consistent with the currentmanufacturing step is preferred. A method which updates the trackedinformation such as the cost of manufacture control parameters, look-uptables, algorithms, or control logic consistent with the currentmanufacturing step while evaluating prior manufacturing steps (such ascompleted manufacturing steps) is more preferred. A method which updateswith tracked information such as the cost of manufacture controlparameters, look-up tables, algorithms, or control logic consistent withthe current manufacturing step while evaluating future manufacturingsteps is even preferred. A method which updates with tracked and/ortrackable information (such as projectable information) such as the costof manufacture control parameters, look-up tables, algorithms, orcontrol logic consistent with the current manufacturing step whileevaluating both prior and future manufacturing steps is even morepreferred. Memory look-up tables and databases can have preferred datatypes. A tracking code is a preferred method to aid evaluation of prior,current, and future manufacture steps. The tracking code can be byindividual semiconductor wafer and/or by semiconductor wafer batch. Thiscan facilitate low cost manufacture and improved in situ control oflubrication (such as lubricating films and/or active lubrication). Thisis preferred for multi-level semiconductor wafer processing because onelevel finishing can affect the next level finishing. This is because adefect formed on one layer can generally affect (usually adversely) thenext level(s). Further, the type and composition of each layer canimpact the improved real time control of finishing such as where aparticular layer has a reduced strength due to porosity.

A process control parameter which changes the friction during finishingis a preferred process control parameter and a process control parameterwhich changes the coefficient of friction is a more preferred processcontrol parameter. Supplying and controlling a finishing aid to theworkpiece surface being finished having a property selected from thegroup consisting of changing the workpiece surface coefficient offriction, changing workpiece surface average cut rate, and changing thecut rate of a specific material of the workpiece surface being finishedis particularly preferred. Changing the pressure at the operativefinishing interface to detect potential changes in the coefficient offriction is preferred and changing the pressure at least four times atthe operative finishing interface to detect potential changes in thecoefficient of friction is more preferred and changing the pressure atleast ten times at the operative finishing interface to detect potentialchanges in the coefficient of friction is more preferred and changingthe pressure at least twenty times at the operative finishing interfaceto detect potential changes in the coefficient of friction is morepreferred. Controlling at least one finishing control parameter changingthe effective coefficient of friction in the operative finishinginterface is preferred. Providing an effective amount of an aqueouslubricating composition between the finishing element surface and theworkpiece being finished for at least a portion of the finishing time inorder to reduce the coefficient of friction or a calculated effectivecoefficient of friction between the finishing element surface and theworkpiece being finished and providing a separate alternate finishingcomposition between the finishing element finishing surface and theworkpiece being finished for at least a portion of the finishing time isalso preferred.

A lubrication control parameter is a parameter which affects thelubrication of the operative finishing interface. A lubrication controlparameter is a preferred process control parameter. A lubricatingcontrol parameter is a parameter which affects the lubrication in theoperative finishing interface—such as regional lubrication or averagelubrication. A lubricating control parameter selected from the groupconsisting of the lubricant chemistry, lubricant concentration,lubricant transfer rate, operative finishing interface temperature,operative finishing interface pressure, and operative finishinginterface motion is a preferred group of lubricating boundary layercontrol parameters. A parameter selected from the group consisting ofthe local lubricant chemistry, local lubricant concentration, locallubricant feed rate, local operative finishing interface temperature,local operative finishing interface pressure, and local operativefinishing interface motion is also a preferred group of lubricatingcontrol parameters.

A method of finishing wherein the controlling and adjusting the processcontrol parameters changes either one or both the tangential force offriction or the coefficient of friction in the operative finishinginterface is preferred and wherein adjusting the process controlparameters change one or both the tangential force of friction or thecoefficient of friction two times in the operative finishing interfaceduring the finishing cycle time is more preferred and wherein adjustingthe process control parameters change one or both the tangential forceof friction or the coefficient of friction four times in the operativefinishing interface during the finishing cycle time is even morepreferred. A plurality of friction sensors generally aids this advancedcontrol. Use of a plurality of cost of manufacture parameters alsogenerally aids this advanced control to reduce the finishing cost of thesemiconductor wafer. A method of finishing wherein the semiconductorwafer surface has at least one uniform region and controlling andadjusting at least 4 times a minimum of three process control parameterschanges a coefficient of friction in at least the uniform region of thesemiconductor wafer surface at least two times during the finishingcycle time is preferred. A method of finishing wherein the semiconductorwafer surface has at least one uniform region wherein the controllingand adjusting at least 4 times a minimum of two process controlparameters changes in a tangential force of friction in at least aregion of the operative finishing interface at least two times duringthe finishing cycle time is preferred.

Controlling the thickness of a lubricating film by changing at least onelubrication control parameter in a manner that changes the coefficientof friction in at least two different regions in the operative finishinginterface in response to an in situ control signal is preferred.Controlling the thickness of the lubricating film by changing at leasttwo process control parameters in situ based on feed back informationfrom a lubrication control subsystem having a friction sensor is alsopreferred. Controlling at least once during the refining cycle time thethickness of the lubricating film which changes the coefficient offriction in the operative finishing interface by changing at least oneprocess control parameter in situ based on feed back information from acontrol subsystem during the finishing cycle time is preferred. Asemiconductor wafer surface having at least a first region wherein thelubricating film is at most one half the molecular layer thicknesscompared to the lubricating film thickness on a second, different regionis preferred and a semiconductor wafer surface having at least a firstregion wherein the lubricating film thickness is at most one third themolecular layer thickness compared to the lubricating film on a second,different region is more preferred when controlling the coefficient offriction, particularly when controlling the changes in the coefficientof friction. Controlling the thickness of the lubricating film bychanging at least one process control parameter in situ based on feedback information from a control subsystem during the finishing cycletime and wherein the control subsystem tracks and updates the feed backinformation for finishing a plurality of the metal layers is even morepreferred for semiconductor wafers having multiple functional levels. Anorganic lubricating film is preferred.

A multiplicity of operative process sensors which includes a pluralityof operative friction sensors is preferred and which includes at leastthree operative friction sensors is more preferred and which includes atleast four operative friction sensors is even more preferred and whichincludes at least five operative friction sensors is even moreparticularly preferred. Comparing the in situ process informationobtained from a plurality of the operative friction sensors is apreferred and comparing the in situ process information obtained from atleast three of the operative friction sensors is more preferred andcomparing the in situ process information obtained from at least four ofthe operative friction sensors is even more preferred and comparing thein situ process information obtained from at least five of the operativefriction sensors is even more particularly preferred. By having multipleoperative friction sensor information compared, preferably withmathematical expressions, algorithms, memory look-up tables and/or withdata bases, differential localized lubrication such as on uniformregions in the operative finishing interface can better be detected,quantified, and controlled by controlling the finishing controlparameters in real time. Preferred control of the finishing controlparameters can reduce unwanted surface defects and increasemanufacturing yields.

Providing an abrasive magnetic finishing element finishing surface forfinishing is preferred and providing a three dimensional abrasivemagnetic finishing element finishing surface for finishing is morepreferred and providing a fixed abrasive magnetic finishing surface forfinishing is even more preferred and providing a three dimensional fixedabrasive magnetic finishing member finishing surface a finishing surfacefor finishing is even more particularly preferred. Fixed abrasivefinishing generally produces less particulates to clean from theworkpiece surface during finishing. Providing the workpiece surfacebeing finished proximate to the finishing surface is preferred andpositioning the workpiece surface being finished proximate to thefinishing surface is more preferred. Using an abrasive magneticfinishing element along with a finishing composition free of abrasiveparticles improves the ability to optically measure the finishingprogress in real time and provide feedback information for improvedprocess control.

Applying a magnetically induced parallel operative finishing motionbetween the workpiece surface being finished and the magnetic finishingelement finishing surface is preferred. The magnetically inducedparallel operative finishing motion creates at least in part, theparallel movement and pressure which supplies the finishing action suchas chemical reactions, tribochemical reactions and/or abrasive wear.Applying a magnetically induced operative finishing motion in a mannerto maintain a substantially parallel relationship between the discretefinishing member finishing surface and the workpiece surface beingfinished is preferred. Applying a magnetically generated operativefinishing motion for forming a lubricating boundary layer is preferred.Applying an operative finishing motion that transfers finishing aid tothe interface between the finishing surface and the workpiece surfacebeing finished is preferred and applying an operative finishing motionthat transfers the finishing aid, forming a marginally effectivelubricating layer between the finishing surface and the workpiecesurface being finished is more preferred and applying an operativefinishing motion that transfers the finishing aid, forming a effectivemarginally lubricating boundary layer between the finishing surface andthe workpiece surface being finished is even more preferred. Thelubrication at the interface reduces the occurrence of high friction andrelated workpiece surface damage. Applying an operative finishing motionthat transfers the finishing aid, forming a lubricating boundary layerbetween at least a portion of the finishing surface and thesemiconductor wafer surface being finished is preferred and applying anoperative finishing motion that transfers the finishing aid, forming amarginally effective lubricating layer between at least a portion of thefinishing surface and the semiconductor wafer surface being finished sothat abrasive wear occurs to the semiconductor wafer surface beingfinished is more preferred and applying an operative finishing motionthat transfers the finishing aid, forming a marginally effectivelubricating boundary layer between at least a portion of the finishingsurface and the semiconductor wafer surface being finished so thattribochemical wear occur to the semiconductor wafer surface beingfinished is even more preferred and applying an operative finishingmotion that transfers the finishing aid, differentially lubricatingdifferent regions of the heterogeneous semiconductor wafer surface beingfinished even more particularly preferred. With heterogeneous workpiecesurfaces, the potential to differentially lubricate and finish aworkpiece surface has high value where the differential lubrication isunderstood and controlled.

A finishing aid selected from the group consisting of a lubricating aidand chemically reactive aid is preferred. Forming a hydrodynamiclubricating layer in the operative finishing interface is preferred.Forming a lubricating film layer in the operative finishing interface ispreferred. Forming an organic lubricating boundary layer in theoperative finishing interface is more preferred. Both types oflubrication can help reduce unwanted surface defects. An organiclubricating boundary layer generally has a higher finishing rate. Afinishing aid which reacts with the workpiece surface being finished ispreferred and which reacts with a portion of the workpiece surface beingfinished is more preferred and which differentially reacts withheterogeneous portions of a workpiece surface being finished is evenmore preferred. An organic lubricating boundary layer which adheres tothe semiconductor wafer being finished (and/or regions being finished)is preferred. By reacting with the workpiece surface, control offinishing rates can be improved and some surface defects minimized oreliminated. A finishing aid which reduces friction during finishing isalso preferred because surface defects can be minimized.

Supplying a finishing aid to the workpiece surface being finished whichchanges the rate of a chemical reaction is preferred. Supplying afinishing aid to the workpiece surface being finished having a propertyselected from the group consisting of workpiece surface coefficient offriction change, workpiece finish rate change, a heterogeneous workpiecesurface having differential coefficient of friction, and a heterogeneousworkpiece surface having differential finishing rate change whichreduces unwanted damage to the workpiece surface is particularlypreferred. By supplying a finishing aid, preferably an organiclubricant, to operative finishing interface to change the coefficient offriction, the finishing aid cooperates in a new, unexpected manner withthe finishing element and its discrete finishing members. The shearforces during finishing are reduced on the discrete finishing memberthereby changing the shear induced motion of the discrete finishingmember during finishing of the workpiece surface. This can reduceunwanted surface damage to the workpiece surface being finished.

Using the method of this invention to finish a workpiece, especially asemiconductor wafer, by controlling finishing for a period of time withan electronic control subsystem connected electrically to the finishingequipment control mechanism to adjust in situ at least one finishingcontrol parameter that affect finishing selected from the groupconsisting of the finishing rate and the finishing uniformity ispreferred. Finishing control parameters are selected from the groupconsisting of the finishing composition, finishing composition feedrate, finishing temperature, finishing pressure, operative finishingmotion velocity and type, and finishing element type and conditionchange are preferred. The electronic control subsystem is operativelyconnected electrically to the lubrication control mechanism. Themeasurement and control subsystem can be separate units and/orintegrated into one unit. A preferred method to measure finishing rateis to measure the change in the amount of material removed in angstromsper unit time in minutes (.ANG./min). Guidance on the measurement andcalculation for polishing rate for semiconductor part is found in U.S.Pat. No. 5,695,601 to Kodera et. al. issued in 1997 and is includedherein in its entirety for illustrative guidance.

An average finishing rate range is preferred, particularly forworkpieces requiring very high precision finishing such as in processingelectronic wafers. Average cut rate is used as a preferred metric todescribe preferred finishing rates. Average cut rate is metric generallyknown to those skilled in the art. For electronic workpieces, andparticularly for semiconductor wafers, a cut rate of from 100 to 25,000Angstroms per minute on at least a portion of the workpiece is preferredand a cut rate of from 200 to 15,000 Angstroms per minute on at least aportion of the workpiece is more preferred and a cut rate of from 500 to10,000 Angstroms per minute on at least a portion of the workpiece iseven more preferred and a cut rate of from 500 to 7,000 Angstroms perminute on at least a portion of the workpiece is even more particularlypreferred and a cut rate of from 1,000 to 5,000 Angstroms per minute onat least a portion of the workpiece is most preferred. A finishing rateof at least 100 Angstroms per minute for at least one of the regions onthe surface of the workpiece being finished is preferred and a finishingrate of at least 200 Angstroms per minute for at least one of thematerials on the surface of the workpiece being finished is preferredand a finishing rate of at least 500 Angstroms per minute for at leastone of the regions on the surface of the workpiece being finished ismore preferred and a finishing rate of at least 1000 Angstroms perminute for at least one of the regions on the surface of the workpiecebeing finished is even more preferred where significant removal of asurface region is desired. During finishing there are often regionswhere the operator desires that the finishing stop when reached such aswhen removing a conductive region (such as a metallic region) over a nonconductive region (such as a silicon dioxide region). For regions whereit is desirable to stop finishing (such as the silicon dioxide regionexample above), a finishing rate of at most 1500 Angstroms per minutefor at least one of the regions on the surface of the workpiece beingfinished is preferred and a finishing rate of at most 500 Angstroms perminute for at least one of the materials on the surface of the workpiecebeing finished is preferred and a finishing rate of at most 200Angstroms per minute for at least one of the regions on the surface ofthe workpiece being finished is more preferred and a finishing rate ofat most 100 Angstroms per minute for at least one of the regions on thesurface of the workpiece being finished is even more preferred wheresignificant removal of a surface region is desired. The finishing ratecan be controlled lubricants and with the process control parametersdiscussed herein.

The average cut rate can be measured for different materials on thesurface of the semiconductor wafer being finished. For instance, asemiconductor wafer having a region of tungsten can have a cut rate of6,000 Angstroms per minute and region of silica cut rate of 500Angstroms per minute. As used herein, selectivity is the ratio of thecut rate of one region divided by another region. As an example theselectivity of the tungsten region to the silica region is calculated as6,000 Angstroms per minute divided by 500 Angstroms per minute orselectivity of tungsten cut rate to silica cut rate of 12. Anlubricating properties of the finishing element can change theselectivity. It is currently believed that this is due to differentiallubrication in the localized regions. Changing the lubricatingproperties of the finishing element to advantageously adjust theselectivity during the processing of a group of semiconductor wafersurfaces or a single semiconductor wafer surface is preferred. Changinglubricating properties of the finishing element to advantageously adjustthe cut rate during the processing of a group of semiconductor wafersurfaces or a single semiconductor wafer surface is preferred. Adjustingthe lubricating properties of the finishing element by changingfinishing elements proximate a heterogeneous surface to be finished ispreferred. A finishing element with high initial cut rates can be usedinitially to improve semiconductor wafer cycle times. Changing to afinishing element having dispersed lubricants and a differentselectivity ratio proximate a heterogeneous surface to be finished ispreferred. Changing to a finishing element having dispersed lubricantsand a high selectivity ratio proximate a heterogeneous surface to befinished is more preferred. In this manner customized adjustments to cutrates and selectivity ratios can be made proximate to criticalheterogeneous surface regions. Commercial CMP equipment is generallyknown to those skilled in the art which can change finishing elementsduring the finishing cycle time of a semiconductor wafer surface. Asdiscussed above, finishing a semiconductor wafer surface only a portionof the finishing cycle time with a particular finishing element havingdispersed lubricants proximate a heterogeneous surface is particularlypreferred.

Finishing a semiconductor wafer in with the discrete finishing membersin contact with at least 3 high finishing rate local regions measured inangstroms per minute is preferred and in contact with at least 4 highfinishing rate local regions measured in angstroms per minute is morepreferred and in contact 5 high finishing rate local regions measured inangstroms per minute is even more preferred. Finishing a semiconductorwafer in with the discrete finishing members in abrasive contact with atleast 3 high finishing rate local regions measured in angstroms perminute is preferred and in abrasive contact with at least 4 highfinishing rate local regions measured in angstroms per minute is morepreferred and in abrasive contact 5 high finishing rate local regionsmeasured in angstroms per minute is even more preferred. This leads tohigh local regions having high finishing rates (in the areas of higherpressure and/or lower lubrication) and improved planarity on thesemiconductor wafer surface.

FIGS. 12 a and 12 b is an artist's representation of some local highfinishing rate regions and some local low finishing rate regions.Reference Numeral 800 represents a portion of a semiconductor surfacehaving two high local regions. Reference Numeral 802 represent highlocal regions (unwanted raised regions) on the semiconductor surfacebeing finished. Reference Numeral 804 represent low local regions on thesemiconductor surface being finished proximate to the high localregions. The discrete finishing member finishing surface is shown inlocal contact with the high local regions (Reference Numeral 802).Reference Numeral 812 represents the discrete finishing member surfacedisplaced from but proximate to the high local regions (unwanted raisedregions). As shown the discrete finishing member can reduce pressureand/or lose actual contact with the low local regions on thesemiconductor proximate to the high local regions (unwanted raisedregions). This leads to high local regions (unwanted raised regions)having high finishing rates and improved planarity on the semiconductorwafer surface. As shown in FIGS. 12 a and 12 b, the area of contact withthe high local region is small which in turn raises the finishingpressure applied by the stiff discrete finishing member finishingsurface and this increased pressure increases the finishing ratemeasured in angstroms per minute at the high local region. This higherpressure on the high local region also increases frictional heat whichcan further increase finishing rate measured in angstroms per minute inthe local high region. When using a boundary layer lubrication,lubrication on the high local region can be reduced due to the highertemperature and/or pressure which further increases friction andfinishing rate measured in angstroms per minute. Higher stiffnessdiscrete finishing member finishing surfaces (higher flexural modulusdiscrete finishing members) apply higher pressures to the high localregions which can further improve planarization, finishing rates, andwithin die nonuniformity. Finishing using finishing elements of this ininvention wherein the high local regions have a finishing rate measuredin angstroms per minute of at least 1.6 times faster than in theproximate low local region measured in angstroms per minute is preferredand wherein the high local regions have a finishing rate of at least 2times faster than in the proximate low local region is preferred andwherein the high local regions have a finishing rate of at least 3 timesfaster than in the proximate low local region is preferred. Where thereis no contact with the proximate low local region, the finishing rate inthe low local region can be very small and thus the ratio between thefinishing rate in the high local region to finishing rate in the lowlocal region can be large. Finishing using finishing elements of this ininvention wherein the high local regions have a finishing rate measuredin angstroms per minute of from 1.6 to 500 times faster than in theproximate low local region measured in angstroms per minute is preferredand wherein the high local regions have a finishing rate of from 2 to300 times faster than in the proximate low local region is preferred andwherein the high local regions have a finishing rate of from 3 to 200times faster than in the proximate low local region is preferred. Byhaving the each discrete finishing member in contact with at least 3increased finishing rate local high regions, the semiconductor wafersurface is more effectively planarized. During finishing, preferably theunitary resilient body compresses and urges discrete finishing memberagainst semiconductor wafer surface being finished. By adjusting theflexural modulus of the discrete finishing member finishing surface,resilience of the unitary resilient body, and the other controlparameters discussed herein, finishing and planarization ofsemiconductor wafer surfaces can be accomplished. This invention allowsunique control of finishing.

FIGS. 12 c, 12 d, and 12 e is an artist's representation of method forrefining using the versatility of the disclosed technology. FIG. 12 cdepicts workpiece having an electric current barrier film 6000 coveringits surface in both unwanted high regions 6002 and regions lower thanthe unwanted high regions 6004. Preferably the barrier film adheres tothe workpiece surface. A nonlimiting illustrative example is a polymerfilm formed using a spin on processing. Other nonlimiting examplesinclude polyamide polymers, polymethylacrylonitrile polymers, andpolyvinyl chloride polymers. The surface of a refining element beforesignificant operative finishing motion 6010. FIG. 12 d depicts theworkpiece with the barrier film removed from the high areas 6002 andremaining in the regions lower than the unwanted high regions 6004.Operative finishing motion with a refining element can remove thebarrier film from the tops of the unwanted raised regions 6002 whileallowing the lower regions 6004 to retain the electric current barrierfilm 6000. In FIG. 12 e, a electro-refining element having an electrode6050 which has applied electric field to remove material from surface ofthe workpiece such a metal, more preferably copper. A higher currentdensity is experienced in the regions of 6002 because of the reducedand/or eliminated electric current barrier film 6000 while removing lessmaterial from lower regions 6004 because the higher thickness of thebarrier. In other words, the electric current barrier film is thicker inregion 6042 and thinner or removed in region 6040 facilitating thedifferential electro-refining rates. An operative optical sensor 6070for sensing with optical beams 6072 and measuring the thickness of theelectric current barrier film during an refining process (preferablyabrasive or friction induced refining) depicted in FIG. 12 d and theelectro-refining process of depicted in FIG. 12 e. Using generally knownoptical sensors and techniques to monitor the change in electric currentbarrier film thickness is a preferred operative sensor and system.Single wavelength or multiple wavelength sensors can be used. Aninterferometer for instance can be used. The thickness of the electriccurrent barrier film can aid in control by forming a basis for regionalcurrent leakage across the electric current barrier film as it becomesthinner. Thus, sensing electric current barrier film thicknessfacilitates control during regional electro-polishing. Further, usingrefining elements having independent control of their refining asdisclosed herein dramatically enhances the versatility, use, and controlof barrier films for refining. Further preferred embodiments aredisclosed elsewhere herein. By measuring and controlling to changes inthickness of the barrier film, improved process control can be effected.By having independently controlled electro-refining element, africtional refining element, and an operative sensor for sensing theelectric current barrier film thickness in real time, the processing canbe optimized in real time by adjusting the electric barrier filmthickness in real time with the frictional refining element controlparameters discussed herein elsewhere. The use of barriers and/ormasking layers is generally known from the disclosures in U.S. Pat. No.6,315,883 and is included herein by reference in its entirety forfurther general guidance on useful barriers and masks and formodification by those skilled in the art using the previouslyconfidential disclosures contained herein.

Generally a die has at least one unwanted raised region created prior tofinishing which is related to the location high pattern density. Eachsemiconductor wafer generally has many die with the same repeatingtopography relating to the unwanted raised region which in turn isgenerally related to a location of high pattern density. Finishingwherein the unwanted raised regions have a temperature of at least 3degrees centigrade higher than in the proximate low local region ispreferred and finishing wherein the unwanted raised regions have atemperature of at least 7 degrees centigrade higher than in theproximate low local region is preferred and finishing wherein theunwanted raised regions have a temperature of at least 10 degreescentigrade higher than in the proximate low local region is preferred.Finishing with stiff discrete finishing members, preferably having aflexural modulus of at least 20,000 psi., can increase the difference intemperature of the unwanted raised regions as compared to the proximatelow local regions. Finishing with preferred organic boundary lubricatinglayers can increase the difference in temperature of the unwanted raisedregions as compared to the proximate low local regions. Higher localizedtemperature gradients can aid planarization.

Using finishing technology of this invention to remove raised surfaceperturbations and/or surface imperfections on the workpiece surfacebeing finished is preferred. Using the method of this invention tofinish a workpiece, especially a semiconductor wafer, at a planarizingrate and/or planarizing uniformity according to a controllable set ofoperational parameters that upon variation change the planarizing rateand/or planarizing uniformity and wherein at least two operationalparameters are selected from the group consisting of the type oflubricant, quantity of lubricant, and time period lubrication ispreferred. Using the method of this invention to polish a workpiece,especially a semiconductor wafer, wherein an electronic controlsubsystem connected electrically to an operative lubrication feedmechanism adjusts in situ the subset of operational parameters thataffect the planarizing rate and/or the planarizing uniformity andwherein the operational parameters are selected from the groupconsisting of the type of lubricant, quantity of lubricant, and timeperiod lubrication is preferred. The electronic control subsystem isoperatively connected electronically to the operative lubrication feedmechanism.

Using the method of this invention to polish or planarize a workpiece,especially a semiconductor wafer, supplying lubrication moderated by afinishing element having at least a discrete finishing member and amagnetic composite member is preferred. Forming a lubricating boundarylayer in the operative finishing interface with a finishing elementhaving at least a discrete finishing member and a magnetic compositemember is more preferred. Forming a lubricating boundary layer in theoperative finishing interface with a finishing element having at least adiscrete finishing member, the discrete finishing member comprising amultiphase polymeric composition, and a magnetic composite member iseven more preferred. A finishing element having a magnetic compositemember which is free of contact with the workpiece surface duringfinishing is preferred for finishing some workpieces. Applying amagnetically induced operative finishing motion forming a organicboundary lubricating layer separating at least a portion of the discretefinishing member finishing surface from the workpiece surface beingfinished while the unitary resilient body is separated by more than thethickness of the organic boundary lubricating thickness is even morepreferred. In other words, applying a operative finishing motion whereinthe unitary resilient body is free of contact with the workpiece surfaceis preferred for some finishing operations.

Applying a variable pressure to the backside surface of the discretefinishing member is preferred. Applying a magnetically variable pressureto the backside surface of the discrete finishing member is morepreferred. Applying a magnetically controllable pressure to the backsidesurface of the discrete finishing member is more preferred. Applying amagnetically controllable pressure to the backside surface of thediscrete finishing member wherein the magnetic pressure is controlled byvarying electromagnets is even more preferred. Applying a pressure whichvaries across the backside surface of the discrete finishing member ispreferred. Applying a pressure which varies across at least a portion ofthe backside surface of the magnetic finishing element finishing surfaceis preferred. Applying a pressure which varies across at least a portionof the backside surface of the discrete finishing member is morepreferred. Particularly preferred is wherein the magnetically variablepressure is applied to a unitary resilient body.

A method for finishing having at least two of a plurality ofmagnetically responsive finishing elements having different paralleloperative finishing motions is preferred. A method for finishing havingat least two of the plurality of magnetically responsive finishingelements having different finishing surfaces is preferred. A method forfinishing having at least two of the plurality of magneticallyresponsive finishing elements having different parallel operativefinishing motions for at least a portion of the finishing cycle time ismore preferred. A method for finishing having at least two of theplurality of magnetically responsive finishing elements having differentfinishing surfaces, one being more abrasive and one being less abrasive,for at least a portion of the finishing cycle time is more preferred. Amagnetic driving element is capable of magnetically coupling with themagnetically responsive finishing element is preferred. A magneticdriving element that is capable of moving the magnetically responsivefinishing surface in a parallel orientation relative to thesemiconductor wafer surface being finished, forming an operativefinishing motion is also preferred. A plurality of the magnetic drivingelements magnetically coupling with a plurality of the magneticallyresponsive finishing elements is more preferred. A magnetic drivingelement that is capable of moving the magnetically responsive finishingsurface in a parallel orientation relative to the semiconductor wafersurface being finished, forming an operative finishing motion is morepreferred. By having these preferred embodiments, finishing versatilityis generally enhanced.

Finishing the workpiece being finished with a plurality of magneticfinishing elements and wherein each finishing element has a plurality ofdiscrete finishing members is preferred. Simultaneously finishing theworkpiece being finished with a plurality of magnetic finishing elementsand wherein each finishing element has a plurality of discrete finishingmembers is preferred. Preferred examples of different finishing elementsconsist of finishing elements selected from the group having differentdiscrete finishing members, different abrasives (or one with abrasiveand one abrasive free) and/or different unitary resilient bodies.Preferred examples of discrete finishing members comprise discretefinishing members having different shapes, different sizes, differentabrasives, different types of abrasives, different finishing aids,different hardness, different resilience, different composition,different porosity, and different flexural modulus. Preferred examplesof unitary resilient body comprise unitary resilient bodies havingdifferent shapes, different sizes, different finishing aids, differenthardness, different resilience, different composition, differentporosity, and different flexural modulus. By using different finishingelements, one can finish the workpiece surface in stages. By staging thefinishing, unwanted damage to the workpiece surface can generally bereduced.

Finishing with an operative finishing interface being free of purposelyintroduced inorganic abrasives can be preferred for some finishingapplications wherein the surface is particularly prone to damage easily.Finishing with an operative finishing interface being free of purposelyintroduced inorganic abrasives and having organic polymeric abrasivescan be preferred for some finishing applications wherein the surface isa little more robust and/or where light polishing or buffing is desired.Said in other words, finishing in the interface between a magneticelement finishing surface and the workpiece surface being finishedwherein the magnetic finishing element finishing surface is free ofinorganic abrasives and any added finishing composition is free ofinorganic abrasives is preferred. An example of a particularly delicatesemiconductor wafer surface are some of the multi-level semiconductorswhich have used some of the current low-k dielectrics. For instance, afinishing surface having a preferred flexural modulus organic syntheticresin containing a higher modulus organic synthetic resin particles canbe preferred.

A preferred embodiment of this invention is directed to a method ofrefining a semiconductor wafer having a refining cycle time comprising astep of providing a plurality of magnetically responsive refiningelements having a refining surface free of any nonmagnetic drivingmechanism; a step of providing a plurality of magnetic driving elementshaving at least one driving mechanism; a step of providing a controlsubsystem having an operative semiconductor wafer sensor for providingrefining information; a step of positioning the semiconductor wafer witha holder proximate to the plurality of the magnetic refining elementsand between the magnetically responsive refining element and theplurality of the magnetic driving elements; a step of applying anoperative refining motion comprising a magnetically induced parallelrefining motion between the semiconductor wafer surface and the refiningsurfaces of the plurality of the magnetically responsive refiningelements; and a step of controlling in situ a refining control parameterwith the control subsystem after evaluating the refining information.

A preferred embodiment of this invention is directed to an apparatus forrefining a semiconductor wafer surface comprising a plurality ofmagnetically responsive refining elements free of any nonmagneticdriving mechanism; a magnetic driving means spaced apart from theplurality of the magnetically responsive refining elements; a holder fora semiconductor wafer which exposes the semiconductor wafer surface forrefining, the holder situated between the plurality of the magneticallyresponsive refining elements and the magnetic driving means, and whereinthe magnetic driving means is for driving the plurality of themagnetically responsive refining elements in an parallel operativerefining motion against the semiconductor wafer surface A preferredembodiment of this invention is directed to an apparatus for refining asemiconductor wafer surface comprising a magnetically responsiverefining element free of any nonmagnetic driving mechanism; a magneticdriving element operatively connected to a driving mechanism and whereinthe magnetic driving element is spaced apart from the magneticallyresponsive refining element; and a holder for a semiconductor waferwhich exposes the semiconductor wafer surface for refining, the holdersituated between the magnetically responsive refining element and themagnetic driving element and having an adjustable retainer ring.

A preferred embodiment of this invention is directed to a apparatus forrefining a semiconductor wafer surface comprising a plurality ofmagnetically responsive refining elements free of any physicallyconnected movement mechanism; a plurality of magnetic driving elementsoperatively connected to at least one driving mechanism and wherein theplurality of the magnetic driving elements is spaced apart from themagnetically responsive refining element; a holder for a semiconductorwafer which exposes the semiconductor wafer surface for refining to theplurality of the magnetically responsive refining element, the holdersituated between the plurality of the magnetically responsive refiningelements and the at least one magnetic driving element; and a controlsubsystem having an operative semiconductor wafer sensor andmagnetically responsive refining element sensor.

A preferred embodiment of this invention is directed to a magneticrefining element having a plurality of discrete refining members forrefining a semiconductor wafer comprising a plurality discrete refiningmembers wherein each discrete refining member has a surface area of lessthan the surface area of the semiconductor wafer being refined, eachdiscrete refining member has an abrasive refining surface and a refiningmember body, and a ratio of the shortest distance across in centimetersof the discrete refining member body to the thickness in centimeters ofeach discrete refining member body is at least 10/1; and at least onemagnetic composite member has a corrosion resistant coating and theplurality of discrete refining members is attached to the magneticcomposite member.

A preferred embodiment of this invention is directed to a magneticrefining element having a refining layer with a refining surface forrefining a semiconductor wafer comprising the refining surface layerhaving a refining surface area of less than the surface area of thesemiconductor wafer being refined; and a magnetic composite memberwherein the magnetic composite member is attached to the refiningsurface layer and the magnetic composite member is protected with apolymeric corrosion protecting layer.

A preferred embodiment of this invention is directed to a method forrefining a semiconductor wafer surface comprising a step of providing amagnetically responsive refining element free of a nonmagnetic drivingmechanism; a step of providing a magnetic driving element operativelyconnected to a driving mechanism; a step of providing a semiconductorwafer surface between the magnetically responsive refining element andthe magnetic driving element; a step of providing a reactive refiningaid between the magnetically responsive refining element and thesemiconductor wafer surface; a step of magnetically coupling themagnetically responsive refining element with the magnetic drivingelement; and a step of applying an parallel operative refining motion inthe operative refining interface formed between the semiconductor wafersurface and the magnetically responsive refining element by movingmagnetic driving element with the driving mechanism.

A preferred embodiment of this invention is directed to a method forrefining a semiconductor wafer surface comprising a step of providing aplurality of magnetically responsive refining elements free of anyphysically connected movement mechanism; a step of providing a pluralityof magnetic driving elements operatively connected to at least onedriving mechanism; a step of providing a semiconductor wafer surfacebetween the plurality of magnetically responsive refining elements andthe plurality of the magnetic driving elements; a step of providing areactive refining composition between the magnetically responsiverefining element and the semiconductor wafer surface; a step ofmagnetically coupling the magnetically responsive refining elements withthe plurality of the magnetic driving elements; and a step of applyingan parallel operative refining motion in the operative refininginterface formed between the semiconductor wafer surface and theplurality of the magnetically responsive refining elements by moving theplurality of the magnetic driving elements with at least one drivingmechanism.

A preferred embodiment of this invention is directed to a method ofremoving unwanted material from a semiconductor wafer surface comprisinga step of providing a magnetically responsive refining element having arefining surface free of any physically connected movement mechanism; astep of providing a magnetic driving element having a driving mechanism;a step of positioning the semiconductor wafer with a holder proximate tothe magnetically responsive refining element and between themagnetically responsive refining element and magnetic driving element; astep of applying an operative refining motion comprising a magneticallyinduced parallel operative refining motion in the interface between thesemiconductor wafer surface and the refining surface of the magneticallyresponsive refining element in order to remove the unwanted material.

A preferred embodiment of this invention is directed to a method ofrefining a semiconductor wafer having a refining cycle time comprising astep of providing a plurality of magnetically responsive refiningelements having a refining surface free of any nonmagnetic drivingmechanism; a step of providing a plurality of magnetic driving elementshaving at least one driving mechanism; a step of providing a controlsubsystem having an operative semiconductor wafer sensor for providingrefining information; a step of positioning the semiconductor wafer witha holder proximate to the plurality of the magnetic refining elementsand between the magnetically responsive refining element and theplurality of the magnetic driving elements; a step of applying anoperative refining motion comprising a magnetically induced parallelrefining motion between the semiconductor wafer surface and the refiningsurfaces of the plurality of the magnetically responsive refiningelements; and a step of controlling in situ a refining control parameterwith the control subsystem after evaluating the refining information.

A preferred embodiment of this invention is directed to an apparatus forrefining a semiconductor wafer surface comprising a plurality ofmagnetically responsive refining elements free of any nonmagneticdriving mechanism; a magnetic driving means spaced apart from theplurality of the magnetically responsive refining elements; a holder fora semiconductor wafer which exposes the semiconductor wafer surface forrefining, the holder situated between the plurality of the magneticallyresponsive refining elements and the magnetic driving means, and whereinthe magnetic driving means is for driving the plurality of themagnetically responsive refining elements in an parallel operativerefining motion against the semiconductor wafer surface A preferredembodiment of this invention is directed to an apparatus for refining asemiconductor wafer surface comprising a magnetically responsiverefining element free of any nonmagnetic driving mechanism; a magneticdriving element operatively connected to a driving mechanism and whereinthe magnetic driving element is spaced apart from the magneticallyresponsive refining element; and a holder for a semiconductor waferwhich exposes the semiconductor wafer surface for refining, the holdersituated between the magnetically responsive refining element and themagnetic driving element and having an adjustable retainer ring.

A preferred embodiment of this invention is directed to an apparatus forrefining a semiconductor wafer surface comprising a plurality ofmagnetically responsive refining elements free of any physicallyconnected movement mechanism; a plurality of magnetic driving elementsoperatively connected to at least one driving mechanism and wherein theplurality of the magnetic driving elements is spaced apart from themagnetically responsive refining element; a holder for a semiconductorwafer which exposes the semiconductor wafer surface for refining to theplurality of the magnetically responsive refining element, the holdersituated between the plurality of the magnetically responsive refiningelements and the at least one magnetic driving element; and a controlsubsystem having an operative semiconductor wafer sensor andmagnetically responsive refining element sensor.

A preferred embodiment of this invention is directed to an apparatus forrefining comprising a magnetically responsive refining element free ofany physically connected movement mechanism; a magnetic driving elementoperatively connected to at least one driving mechanism and wherein themagnetic driving element is spaced apart from the magneticallyresponsive refining element; a holder for a semiconductor wafer whichexposes the semiconductor wafer surface for refining to the magneticallyresponsive refining element and wherein the holder situated between themagnetically responsive refining elements and the magnetic drivingelement; a refining chamber wherein the magnetically responsive refiningelement and the holder are inside the refining chamber and wherein themagnetic driving element is outside the refining chamber; and a controlsubsystem having an operative semiconductor wafer sensor andmagnetically responsive refining element sensor, the control subsystemfor controlling the electro-refining between the first electrode and thesecond electrode. A preferred embodiment of this invention is directedto an apparatus for refining comprising a magnetically responsiverefining element free of any physically connected movement mechanism; amagnetic driving element operatively connected to at least one drivingmechanism and wherein the magnetic driving element is spaced apart fromthe magnetically responsive refining element; a holder for asemiconductor wafer which exposes the semiconductor wafer surface forrefining to the magnetically responsive refining element and wherein theholder situated between the magnetically responsive refining element andthe magnetic driving element; a refining chamber for containing themagnetically responsive refining element and the holder and wherein themagnetic driving element is outside the refining chamber; and a controlsubsystem having an operative semiconductor wafer sensor andmagnetically responsive refining element sensor, the control subsystemfor controlling the electro-refining between the first electrode and thesecond electrode.

A preferred embodiment of this invention is directed to an apparatus forrefining comprising a magnetically responsive refining element free ofany physically connected movement mechanism; a magnetic driving elementoperatively connected to at least one driving mechanism and wherein themagnetic driving element is spaced apart from the magneticallyresponsive refining element; a holder for a semiconductor wafer whichexposes the semiconductor wafer surface for refining to the magneticallyresponsive refining element and wherein the holder situated between themagnetically responsive refining element and the magnetic drivingelement; a refining chamber for containing the magnetically responsiverefining element and the holder and wherein the magnetic driving elementis outside the refining chamber and the refining chamber has anoperative refining composition inlet and outlet; and a control subsystemhaving an operative semiconductor wafer sensor and magneticallyresponsive refining element sensor, the control subsystem forcontrolling at least in part the electro-refining between the firstelectrode and the second electrode.

A preferred embodiment of this invention is directed to a method ofrefining a semiconductor wafer having a refining cycle time comprising astep of providing a plurality of magnetically responsive refiningelements having a refining surface free of any nonmagnetic drivingmechanism, each of the magnetically responsive refining elements havinga first operative electrode; a step of providing a plurality of magneticdriving elements having at least one driving mechanism; a step ofproviding a control subsystem having an operative sensor for providingrefining information; a step of positioning the semiconductor wafer witha holder having an operative electrical contact forming a secondoperative electrode proximate to the plurality of the magnetic refiningelements and between the magnetically responsive refining element andthe plurality of the magnetic driving elements; a step of applying anoperative refining motion comprising a magnetically induced parallelrefining motion between the semiconductor wafer surface being refinedand the refining surfaces of the plurality of the magneticallyresponsive refining elements; a step of applying a plurality ofoperative voltages across the plurality of first operative electrodesand the second operative electrode for electro-refining to change theamount of material on the semiconductor wafer surface during at least aportion of a refining cycle time; and a step of controlling in situ arefining control parameter with the control subsystem after evaluatingthe refining information.

A preferred embodiment of this invention is directed to an apparatus forrefining comprising a plurality of magnetically responsive refiningelements free of any physically connected movement mechanism, at leastone of the magnetically responsive refining elements having a firstoperative electrode; a plurality of magnetic driving elementsoperatively connected to at least one driving mechanism and wherein theplurality of the magnetic driving elements is spaced apart from themagnetically responsive refining element; a holder for a semiconductorwafer which exposes the semiconductor wafer surface for refining to theplurality of the magnetically responsive refining elements and whereinthe holder situated between the plurality of the magnetically responsiverefining elements and the at least one magnetic driving element; and theholder the holder has an operative electrical contact forming a secondoperative electrode; and a control subsystem having an operativesemiconductor wafer sensor and magnetically responsive refining elementsensor, the control subsystem for controlling the electro-refiningbetween the first electrode and the second electrode.

A preferred embodiment of this invention is directed to a magneticrefining element comprising an operative electrode; a magneticallyresponsive element protected with a corrosion resistant material; anoperative electro-refining surface; and at least one material whichconnects the operative electrode, the magnetically responsive element,and the operative electro-refining surface.

A preferred embodiment of this invention is directed to a magneticrefining element having an electro-refining surface for refining asemiconductor wafer comprising an operative electrode; theelectro-refining surface layer comprising a porous material; amagnetically responsive material; and at least one polymer whichconnects the operative electrode, the magnetically responsive element,and the operative electro-refining surface.

A preferred embodiment of this invention is directed to an apparatus forrefining comprising a magnetically responsive refining element free ofany physically connected movement mechanism and having a first operativeelectrode; a magnetic driving element operatively connected to at leastone driving mechanism and wherein the magnetic driving element is spacedapart from the magnetically responsive refining element; a holder for asemiconductor wafer which exposes the semiconductor wafer surface forrefining to the magnetically responsive refining element, the holder theholder having an operative electrical contact forming a second operativeelectrode, and wherein the holder situated between the magneticallyresponsive refining element and the magnetic driving element; a refiningchamber wherein the magnetically responsive refining element and theholder are inside the refining chamber and wherein the magnetic drivingelement is outside the refining chamber; and a control subsystem havingan operative semiconductor wafer sensor and magnetically responsiverefining element sensor, the control subsystem for controlling at leastin part the electro-refining between the first electrode and the secondelectrode.

A preferred embodiment of this invention is directed to an apparatus forrefining comprising a magnetically responsive refining element free ofany physically connected movement mechanism and having a first operativeelectrode; a magnetic driving element operatively connected to at leastone driving mechanism and wherein the magnetic driving elements isspaced apart from the magnetically responsive refining element; a holderfor a semiconductor wafer which exposes the semiconductor wafer surfacefor refining to the magnetically responsive refining elements, theholder having an operative electrical contact forming a second operativeelectrode, and wherein the holder situated between the magneticallyresponsive refining elements and the magnetic driving element; arefining chamber for containing the magnetically responsive refiningelement and the holder and wherein the magnetic driving element isoutside the refining chamber; and a control subsystem having anoperative semiconductor wafer sensor and magnetically responsiverefining element sensor, the control subsystem for controlling at leastin part the electro-refining between the first electrode and the secondelectrode.

A preferred embodiment of this invention is directed to an apparatus forrefining comprising a magnetically responsive refining element free ofany physically connected movement mechanism and having a first operativeelectrode; a magnetic driving element operatively connected to at leastone driving mechanism and wherein the magnetic driving element is spacedapart from the magnetically responsive refining element; a holder for asemiconductor wafer which exposes the semiconductor wafer surface forrefining to the magnetically responsive refining element, the holder theholder having an operative electrical contact forming a second operativeelectrode, and wherein the holder situated between the plurality of themagnetically responsive refining element and the magnetic drivingelement; a refining chamber for containing the magnetically responsiverefining element and the holder and wherein the magnetic driving elementis outside the refining chamber, the refining chamber has an operativerefining composition inlet and outlet; and a control subsystem having anoperative semiconductor wafer sensor and magnetically responsiverefining element sensor, the control subsystem for controlling at leastin part the electro-refining between the first electrode and the secondelectrode.

A preferred embodiment of this invention is directed to a method ofremoving unwanted material from a semiconductor wafer surface comprisingthe step of providing a magnetically responsive refining element havinga refining surface free of any physically connected movement mechanismand having a first operative electrode; the step of providing a magneticdriving element having a driving mechanism; the step of positioning thesemiconductor wafer surface with a holder having an operative electricalcontact forming a second operative electrode proximate to themagnetically responsive refining element and between the magneticallyresponsive refining element and magnetic driving element; the step ofapplying an operative refining motion comprising a magnetically inducedparallel operative refining motion in the interface between thesemiconductor wafer surface being refined and the refining surface ofthe magnetically responsive refining element; and the step of applyingan operative voltage across the first operative electrode and the secondoperative electrode for electro-refining to remove the unwanted materialon the semiconductor wafer surface during at least a portion of arefining cycle time.

A preferred embodiment of this invention is directed to a method ofrefining a semiconductor wafer having a refining cycle time comprisingthe step of providing a plurality of magnetically responsive refiningelements having a refining surface free of any nonmagnetic drivingmechanism, each of the magnetically responsive refining elements havinga first operative electrode; the step of providing a plurality ofmagnetic driving elements having at least one driving mechanism; thestep of providing a control subsystem having an operative sensor forproviding refining information; the step of positioning thesemiconductor wafer with a holder having an operative electrical contactforming a second operative electrode proximate to the plurality of themagnetic refining elements and between the magnetically responsiverefining element and the plurality of the magnetic driving elements; thestep of applying an operative refining motion comprising a magneticallyinduced parallel refining motion between the semiconductor wafer surfacebeing refined and the refining surfaces of the plurality of themagnetically responsive refining elements; the step of applying aplurality of operative voltages across the plurality of first operativeelectrodes and the second operative electrode for electro-refining tochange the amount of material on the semiconductor wafer surface duringat least a portion of a refining cycle time; the step of evaluating therefining information with a processor; and the step of controlling insitu a refining control parameter with the control subsystem afterevaluating the refining information.

A preferred embodiment of this invention is directed to a method ofremoving unwanted material from a semiconductor wafer having a trackingcode and a semiconductor wafer surface comprising the step of providinga refining element having a refining surface and having a firstoperative electrode; the step of positioning the semiconductor wafersurface with a holder having an operative electrical contact forming asecond operative electrode proximate to the refining element; the stepof applying an operative refining motion comprising a parallel operativerefining motion in the interface between the semiconductor wafer surfacebeing refined and the refining surface of the refining element; and thestep of applying an operative voltage across the first operativeelectrode and the second operative electrode for electro-refining toremove the unwanted material on the semiconductor wafer surface duringat least a portion of a refining cycle time; the step of sensingprogress information of the refining of the semiconductor wafer surfacewith an operative control subsystem having access to a process model andhistorical performance; the step of determining at least one improvedcontrol parameter using at least in part at least the process model, thetracking code, historical performance, and the progress information withthe operative control subsystem; and the step of controlling in realtime the at least one process control parameter to change the refining.

A preferred embodiment of this invention is directed to a method ofremoving unwanted material from a semiconductor wafer having a trackingcode and a semiconductor wafer surface comprising the step of providinga refining element having a refining surface and having a firstoperative electrode; the step of positioning the semiconductor wafersurface with a holder having an operative electrical contact forming asecond operative electrode proximate to the refining element; the stepof applying an operative refining motion comprising a parallel operativerefining motion in the interface between the semiconductor wafer surfacebeing refined and the refining surface of the refining element; and thestep of applying an operative voltage across the first operativeelectrode and the second operative electrode for electro-refining whilechanging the unwanted material on the semiconductor wafer surface duringat least a portion of a refining cycle time; the step of sensingprogress information of the refining of the semiconductor wafer surfacewith an operative control subsystem having a multiplicity of operativesensors; the step of determining at least one improved control parameterusing at least in part the tracking code and the progress informationwith the operative control subsystem; and the step of controlling inreal time the at least one process control parameter to change therefining.

A preferred embodiment of this invention is directed to a method ofrefining of a first semiconductor wafer having a first tracking code anda second semiconductor wafer having a second tracking code comprisingthe step of providing an operative control subsystem having a processorand a plurality of operative sensors for sensing real time progressinformation; the step of applying an electrical refining energy to thesurface of a first semiconductor wafer having at least one controlparameter; the step of determining in real time at least one improvedcontrol parameter “A” for the first semiconductor wafer having a firsttracking code, and real time progress information for the firstsemiconductor wafer with an operative control subsystem; the step ofcontrolling in real time the at least one process control parameter “A”to change the removal of material from the first semiconductor wafer;the step of storing for future availability stored information relatedto the at least one control parameter, real time progress information,and the first tracking code; the step of applying a refining energy tothe surface of a second semiconductor wafer having a second trackingcode having at least one control parameter “B”; the step of determiningin real time at least one improved control parameter “B” for the secondsemiconductor wafer surface using at least a portion of the storedinformation related to the at least one control parameter “A”, real timeprogress information, and the first tracking code for the firstsemiconductor wafer and the real time progress information for thesecond semiconductor wafer and the second tracking code with theoperative control subsystem; and the step of controlling in real timethe at least one process control parameter “B” for the secondsemiconductor wafer surface to change the removal of material from thesecond semiconductor wafer.

A preferred embodiment of this invention is directed to a method ofrefining of a first and a second layer on a semiconductor wafer, eachhaving an effect on the cost of manufacture comprising the step ofapplying a refining energy having to the first layer in thesemiconductor wafer; the step of determining in real time at least oneimproved first layer control parameter “A” using a first tracking codeand real time progress information for the semiconductor wafer with anoperative control subsystem having at least one operative sensor; thestep of controlling in real time the at least one first layer processcontrol parameter “A” to change the removal of material from thesemiconductor wafer surface during the refining of the first layer ofthe semiconductor wafer; the step of storing for future availabilitystored information related to the at least one first layer processcontrol parameter “A”, the first tracking code, and the real timeprogress information for the first layer refining; the step of applyinga refining energy to the second layer of the semiconductor wafer havingat least one second layer control parameter “B”; the step of determiningin real time at least one improved second layer control parameter “B”using at least a portion of the stored information related to thetracking code, the first layer progress information, and the secondlayer progress information of the semiconductor wafer with the operativecontrol subsystem; and the step of controlling in real time the at leastone second layer process control parameter “B” to change the removal ofmaterial from the semiconductor wafer surface during the refining of thesecond layer of the semiconductor wafer.

A preferred embodiment of this invention is directed to a method ofrefining of a first semiconductor wafer, a second semiconductor wafer,and a third semiconductor wafer and wherein the first semiconductor hastracking code “D”, the second semiconductor wafer has a tracking code“E”, and the third semiconductor wafer has a tracking code “F”,comprising the step of providing an operative control subsystem having aprocessor and at least one operative sensor for sensing real timeprogress information; the step of applying an electrical refining energyto the surface of a first semiconductor wafer having at least onecontrol parameter; the step of sensing progress information “G” with theat least one operative sensor in real time; the step of determining inreal time at least one improved control parameter “A” using the trackingcode “D”, and progress information “G” for the first semiconductor waferwith the operative control subsystem; the step of controlling in realtime the at least one process control parameter “A” to change therefining for the first semiconductor wafer; the step of storing forfuture availability stored information related to the at least onecontrol parameter, real time progress information “G”, and the trackingcode “D”; the step of applying a refining energy to the surface of asecond semiconductor wafer having at least one control parameter “B”;the step of sensing progress information “F” with the at least oneoperative sensor in real time; the step of determining in real time atleast one improved control parameter “B” for the second semiconductorwafer surface using at least a portion of the stored information relatedto the at least one control parameter “A”, progress information “E” and“F”, and the tracking code “D” and “E” with the operative controlsubsystem; and the step of controlling in real time the at least oneprocess control parameter “B” for the second semiconductor wafer surfaceto change the removal of material from the refining for the secondsemiconductor wafer; the step of storing for future availability storedinformation related to the at least one control parameters “A” and “B”,real time progress information “G” and “F”, and the tracking code “D”and “E”; the step of applying a refining energy to the surface of athird semiconductor wafer having at least one control parameter “C”; thestep of sensing progress information “H” with the at least one operativesensor in real time; the step of determining in real time at least oneimproved control parameter “C” for the third semiconductor wafer surfaceusing at least a portion of the stored information related to the atleast one control parameter “A”, the at least one control parameter “B”,the at least one control parameter “C”, the tracking codes “D”, “E”, and“F”, real time progress information “G”, “H”, and “I”, and the trackingcode “E” with the operative control subsystem; and the step ofcontrolling in real time the at least one process control parameter “C”for the third semiconductor wafer surface to change the refining for thethird semiconductor wafer.

A preferred embodiment of this invention is directed to a method ofrefining of a first semiconductor wafer, a second semiconductor wafer,and a third semiconductor wafer and wherein the first semiconductorwafer has tracking code “D”, the second semiconductor wafer has atracking code “E”, and the third semiconductor wafer has a tracking code“F”, comprising the steps of providing a refining element having atracking code “RE”; the step of providing an operative control subsystemhaving a processor and at least one operative sensor for sensing realtime progress information; the step of applying an refining energy tothe surface of a first semiconductor wafer having at least one controlparameter; the step of sensing progress information “G” with the atleast one operative sensor in real time; the step of determining in realtime at least one improved control parameter “A” using the tracking code“D”, the tracking code “RE”, and progress information “G” for the firstsemiconductor wafer with the operative control subsystem; the step ofcontrolling in real time the at least one process control parameter “A”to change the refining for the first semiconductor wafer; the step ofstoring for future availability stored information related to the atleast one control parameter, real time progress information “G”, thetracking code “RE”, and the tracking code “D”; the step of applying arefining energy to the surface of a second semiconductor wafer having atleast one control parameter “B”; the step of sensing progressinformation “F” with the at least one operative sensor in real time; thestep of determining in real time at least one improved control parameter“B” for the second semiconductor wafer surface using at least a portionof the stored information related to the at least one control parameter“A”, progress information “E” and “F”, the tracking code “RE”, and thetracking code “D” and “E” with the operative control subsystem; and thestep of controlling in real time the at least one process controlparameter “B” for the second semiconductor wafer surface to change theremoval of material from the refining for the second semiconductorwafer; the step of storing for future availability stored informationrelated to the at least one control parameters “A” and “B”, real timeprogress information “G” and “F”, the tracking code “RE”, and thetracking code “D” and “E”; the step of applying a refining energy to thesurface of a third semiconductor wafer having at least one controlparameter “C”; the step of sensing progress information “H” with the atleast one operative sensor in real time; the step of determining in realtime at least one improved control parameter “C” for the thirdsemiconductor wafer surface using at least a portion of the storedinformation related to the at least one control parameter “A”, the atleast one control parameter “B”, the at least one control parameter “C”,the tracking codes “D”, “E”, and “F”, the tracking code “RE”, real timeprogress information “G”, “H”, and “I”, and the tracking code “E” withthe operative control subsystem; and the step of controlling in realtime the at least one process control parameter “C” for the thirdsemiconductor wafer surface to change the refining for the thirdsemiconductor wafer.

A preferred embodiment of this invention is directed to a refiningapparatus comprising magnetically responsive refining element; arefining element placement robot having a electromagnet for lifting,placing, and releasing the magnetically responsive refining element; andan operative controller to control the refining element placement robotfor lifting, placing, and releasing the magnetically responsive refiningelement.

A preferred embodiment of this invention is directed to a refiningapparatus comprising a magnetically responsive refining element having atracking code; a refining element placement arm having a electromagnetfor lifting, placing, and releasing the magnetically responsive refiningelement and an operative sensor to sense the tracking code; and anoperative controller to control the refining element placement arm forlifting, placing, and releasing the magnetically responsive refiningelement.

A preferred embodiment of this invention is directed to a refiningapparatus comprising a magnetically responsive refining element having atracking code; a refining element placement arm having a electromagnetfor lifting, placing, and releasing the magnetically responsive refiningelement and an operative sensor to sense the tracking code; a processorto evaluate information related to the tracking code; and an operativecontroller to control the refining element placement arm for lifting,placing, and releasing the magnetically responsive refining elementbased at least in part on the processor evaluation of the informationrelated to the tracking code.

A preferred embodiment of this invention is directed to a method ofrefining a semiconductor wafer having a refining cycle time comprisingthe step of providing a plurality of magnetically responsive refiningelements having a refining surface free of any nonmagnetic drivingmechanism, one of the magnetically responsive refining elements having afirst operative electrode and one of the magnetically responsiverefining elements is free of any electrode; the step of providing aplurality of magnetic driving elements having at least one drivingmechanism; the step of providing a control subsystem having an operativesensor for providing refining information; the step of providing asemiconductor wafer surface having electric current barrier film; thestep of positioning the semiconductor wafer with a holder having anoperative electrical contact forming a second operative electrodeproximate to the plurality of the magnetically responsive refiningelements and between the magnetically responsive refining elements andthe plurality of the magnetic driving elements and wherein thesemiconductor wafer surface having the electric current barrier film isfacing the magnetically responsive refining elements; the step ofapplying an operative refining motion comprising a magnetically inducedparallel refining motion between the semiconductor wafer surface beingrefined and the refining surface of the magnetically responsive refiningelement free of any electrode; the step of applying an operativeelectric field across the first operative electrode and the secondoperative electrode for electro-refining to differentially removematerial from different areas on the semiconductor wafer surface beingrefined during at least a portion of a refining cycle time; the step ofevaluating the refining information with a processor in real time for atleast one improved control parameter; and the step of controlling inreal time the control parameter with the control subsystem.

A preferred embodiment of this invention is directed to a method ofrefining a semiconductor wafer surface having a cost of manufacturecomprising a step of applying a first and a second refining energieswith a first refining element and a second refining element respectivelyand wherein the first refining energy has at least one control parameter“A”, and the second refining energy has at least one control parameter“B”; a step of determining at least one improved control parameter usingat least in part at least three cost of manufacture parameters, and insitu progress information with an operative control subsystem havingaccess to a cost of manufacture model and historical performance; a stepof controlling the at least one process control parameter to change thecost of manufacture of the semiconductor wafer; and a step of storingfor future availability stored information related to the at least onecontrol parameter, the at least in three cost of manufacture parameters,and the change of the cost of manufacture of the semiconductor wafer.Repeating the sensing, determining, and changing steps above in thisparagraph during a single period of non-steady state refining ispreferred. Repeating the sensing, determining, and changing steps abovein this paragraph at least 4 times is during a single period ofnon-steady state refining is more preferred.

A preferred embodiment of this invention is directed to a method ofrefining a semiconductor wafer having a tracking code and asemiconductor wafer surface comprising a step of applying a first and asecond refining energies with a first refining element and a secondrefining element respectively and wherein the first refining energy hasat least one control parameter “A” and the second refining energy has atleast one control parameter “B”; a step of sensing progress informationof the refining of the semiconductor wafer surface with an operativecontrol subsystem having access to a cost of manufacture model andhistorical performance; a step of determining at least one improvedcontrol parameter using at least in part at least three cost ofmanufacture parameters, the tracking code, and progress information withthe operative control subsystem; and a step of controlling in real timethe at least one process control parameter to improve the cost ofmanufacture of the semiconductor wafer. Repeating the sensing,determining, and controlling steps above in this paragraph during asingle period of non-steady state refining is preferred.

A preferred embodiment of this invention is directed to a method ofrefining of a first semiconductor wafer having a first tracking code anda second semiconductor wafer having a second tracking code comprising astep of providing an operative control subsystem having a processor anda plurality of operative sensors for sensing real time progressinformation; a step of applying an electrical refining energy to thesurface of a first semiconductor wafer having at least one controlparameter; a step of determining in real time at least one improvedcontrol parameter “A” for the first semiconductor wafer having a firsttracking code, and real time progress information for the firstsemiconductor wafer with an operative control subsystem; a step ofcontrolling in real time the at least one process control parameter “A”to change the removal of material during the refining of the firstsemiconductor wafer; a step of storing for future availability storedinformation related to the at least one control parameter, real timeprogress information, and the first tracking code; a step of applying arefining energy to the surface of a second semiconductor wafer having asecond tracking code having at least one control parameter “B”; a stepof determining in real time at least one improved control parameter “B”for the second semiconductor wafer surface using at least a portion ofthe stored information related to the at least one control parameter“A”, real time progress information, and the first tracking code for thefirst semiconductor wafer and the real time progress information for thesecond semiconductor wafer and the second tracking code with theoperative control subsystem; and a step of controlling in real time theat least one process control parameter “B” for the second semiconductorwafer surface to change the removal of material during the refining ofthe second semiconductor wafer. Repeating the sensing, determining, andcontrolling steps above in this paragraph at least 4 times during asingle period of non-steady state refining is preferred.

A preferred embodiment of this invention is directed to a method ofrefining of a first and a second layer on a semiconductor wafer, eachhaving an effect on the cost of manufacture comprising a step ofapplying a refining energy to the first layer in the semiconductorwafer; a step of determining in real time at least one improved firstlayer control parameter “A” using a first tracking code and real timeprogress information for the semiconductor wafer with an operativecontrol subsystem having at least one operative sensor; a step ofcontrolling in real time the at least one first layer process controlparameter “A” to change the removal of material from the semiconductorwafer surface during the refining of the first layer of thesemiconductor wafer; a step of storing for future availability storedinformation related to the at least one first layer process controlparameter “A”, the first tracking code, and the real time progressinformation for the first layer refining; a step of applying a refiningenergy to the second layer of the semiconductor wafer having at leastone second layer control parameter “B”; a step of determining in realtime at least one improved second layer control parameter “B” using atleast a portion of the stored information related to the tracking code,the first layer progress information, and the second layer progressinformation of the semiconductor wafer with the operative controlsubsystem; and a step of controlling in real time the at least onesecond layer process control parameter “B” to change the removal ofmaterial from the semiconductor wafer surface during the refining of thesecond layer of the semiconductor wafer.

A preferred embodiment of this invention is directed to a method forrefining having at least in part at a step of sensing the progress ofrefining information with an operative sensor; a step of evaluating theprogress of refining information and determining a change for at leastone process control parameter; and a step of controlling the at leastone process control parameter to change the electro-refining during therefining cycle time.

A preferred embodiment of this invention is directed to a method forrefining having at least in part at a step of providing an operativecontrol subsystem having an operative sensor, a controller, and aprocessor and wherein the processor has access to a process model, theassigned tracking code, and historical performance; a step of sensingprogress of a first progress of refining information with the operativesensor; a step of determining a first change for at least one controlparameter using at least in part at least the process model, thetracking code, the historical performance, and the first progress ofrefining information with the operative control subsystem; and a step ofchanging in real time the at least one process control parameter whichchanges the refining. A preferred embodiment of this invention isdirected to a method for refining having at least in part at a step ofstoring at least in part at least the process model, the tracking code,the historical performance, and the first progress of refininginformation in a memory device. A preferred embodiment of this inventionis directed to a method for refining having at least in part at a stepof sensing progress of a second progress of refining information withthe operative sensor; a step of determining a second change for at leastone control parameter using at least in part at least the process model,the tracking code, the historical performance, the first progress ofrefining information, and the second progress of refining informationwith the operative control subsystem; and a step of changing in realtime the at least one process control parameter which changes therefining.

A preferred embodiment of this invention is directed to a method forrefining having at least in part at a step of sensing the progress ofrefining information with an operative sensor during a period ofnon-steady state refining; a step of evaluating the progress of refininginformation and determining a change for at least one process controlparameter during the period of non-steady state refining; and a step ofcontrolling the at least one process control parameter to change theelectro-refining during the refining cycle time during the period ofnon-steady state refining. Repeating the sensing, determining, andcontrolling steps above in this paragraph at least 4 times during asingle period of non-steady state refining is preferred. Repeating thesensing, determining, and controlling steps above in this paragraph atleast 10 times during a single period of non-steady state refining ispreferred.

A preferred embodiment of this invention is directed to a method forrefining having at least in part at a step of providing an operativecontrol subsystem having an operative sensor, a controller, and aprocessor and wherein the processor has access to a process model, theassigned tracking code, and historical performance; a step of sensingprogress of a first progress of refining information with the operativesensor during a period of non-steady state refining; a step ofdetermining a first change for at least one control parameter using atleast in part at least the process model, the tracking code, thehistorical performance, and the first progress of refining informationwith the operative control subsystem parameter the period of non-steadystate refining during a period of non-steady state refining; and a stepof changing in real time the at least one process control parameterwhich changes the refining during a period of non-steady state refining.A preferred embodiment of this invention is directed to a method forrefining having at least in part at a step of storing at least in partat least the process model, the tracking code, the historicalperformance, and the first progress of refining information in a memorydevice. A preferred embodiment of this invention is directed to a methodfor refining having at least in part at a step of sensing progress of asecond progress of refining information with the operative sensor; astep of determining a second change for at least one control parameterusing at least in part at least the process model, the tracking code,the historical performance, the first progress of refining information,and the second progress of refining information with the operativecontrol subsystem; and a step of changing in real time the at least oneprocess control parameter which changes the refining. Repeating thesensing, determining, and changing steps above in this paragraph atleast 4 times during a single period of non-steady state refining ispreferred in the above embodiments. Repeating the sensing, determining,and changing steps above in this paragraph at least 10 times during asingle period of non-steady state refining is more preferred in theabove embodiments.

A preferred embodiment of this invention is directed to a method forrefining having at least in part at a step of providing an operativecontrol subsystem having an operative sensor, a controller, and aprocessor and wherein the processor has access to a process model, theassigned tracking code, and information in at least one memory device; astep of sensing progress of refining information with the operativesensor during a period of non-steady refining; a step of determining achange for at least one improved control parameter using at least inpart at least the process model, the tracking code, the information inat least one memory device, and progress of refining information withthe operative control subsystem during the period of non-steadyrefining; and a step of changing in real time the at least one processcontrol parameter which changes the refining during the period ofnon-steady refining. Repeating the sensing, determining, and changingsteps above in this paragraph at least 4 times during a single period ofnon-steady state refining is preferred in the above embodiments.Repeating the sensing, determining, and changing steps above in thisparagraph at least 10 times during a single period of non-steady staterefining is more preferred in the above embodiments.

A preferred embodiment of this invention is directed to a method forrefining having at least in part at a step of providing an operativecontrol subsystem having an operative sensor, a controller, and aprocessor and wherein the processor has access to a process model, theassigned tracking code, and information in at least one memory device; astep of sensing progress of refining information with the operativesensor; a step of determining a change for at least one improved controlparameter using at least in part at least the process model, thetracking code, the information in at least one memory device, andprogress of refining information with the operative control subsystem;and a step of changing in real time the at least one process controlparameter which changes the refining. Repeating the sensing,determining, and changing steps above in this paragraph during a singleperiod of non-steady state refining is preferred. Repeating the sensing,determining, and changing steps above in this paragraph at least 4 timesduring a single period of non-steady state refining is more preferred.Repeating the sensing, determining, and changing steps above in thisparagraph at least 10 times during a single period of non-steady staterefining is even more preferred.

A preferred embodiment of this invention is directed to a method forrefining a semiconductor wafer surface comprising a step of providing amagnetically responsive refining element having a first electrode; astep of providing a magnetic driving element operatively connected to adriving mechanism; a step of providing a semiconductor wafer surfacehaving an operative electrical contact forming a second operativeelectrode between the magnetically responsive refining element and themagnetic driving element; a step of magnetically coupling themagnetically responsive refining element with the magnetic drivingelement; a step of applying a parallel operative refining motion betweenthe semiconductor wafer surface and the magnetically responsive refiningelement by moving magnetic driving element with the driving mechanism;and a step of applying an operative electric field across the firstoperative electrode and the second operative electrode forelectro-refining during at least the portion of a refining cycle time.

A preferred embodiment of this invention is directed to an apparatus forrefining a workpiece surface comprising at least one magneticallyresponsive refining element free of any nonmagnetic driving mechanism;at least one magnetic driving element operatively connected to a drivingmechanism and wherein the at least one magnetic driving element isspaced apart from the magnetically responsive refining element; and aholder for a workpiece which exposes the workpiece surface for refining,the holder situated between the magnetically responsive refining elementand the at least one magnetic driving element and having an adjustableretainer ring.

A preferred embodiment of this invention is directed to a magneticrefining element comprising an operative electrode; a magneticallyresponsive member protected with a corrosion resistant material; and anoperative electro-refining surface, and at least one material whichconnects the operative electrode, the magnetically responsive element,and the operative electro-refining surface.

A preferred embodiment of this invention is directed to a method forfinishing a semiconductor wafer surface comprising a step 1) ofproviding a magnetically responsive finishing element free of anonmagnetic driving mechanism; a step 2) of providing a magnetic drivingelement operatively connected to a driving mechanism; a step 3) ofproviding a semiconductor wafer surface between the magneticallyresponsive finishing element and the magnetic driving element; a step 4)of magnetically coupling the magnetically responsive finishing elementwith the magnetic driving element; and a step 5) of applying an paralleloperative finishing motion in the operative finishing interface formedbetween the semiconductor wafer surface and the magnetically responsivefinishing element by moving magnetic driving element with the drivingmechanism.

A preferred embodiment of this invention is directed to a method forfinishing a semiconductor wafer surface comprising a step of providing aplurality of magnetically responsive finishing elements free of anyphysically connected movement mechanism; a step of providing a pluralityof magnetic driving elements operatively connected to at least onedriving mechanism; a step of providing a semiconductor wafer surfacebetween the plurality of magnetically responsive finishing elements andthe plurality of the magnetic driving elements; a step of magneticallycoupling the magnetically responsive finishing elements with theplurality of the magnetic driving elements; and a step of applying anparallel operative finishing motion in the operative finishing interfaceformed between the semiconductor wafer surface and the plurality of themagnetically responsive finishing elements by moving the plurality ofthe magnetic driving elements with at least one driving mechanism.

A preferred embodiment of this invention is directed to a method ofremoving unwanted material from a semiconductor wafer surface comprisinga step of providing a magnetically responsive finishing element having afinishing surface free of any physically connected movement mechanism; astep of providing a magnetic driving element having a driving mechanism;a step of positioning the semiconductor wafer being finished with aholder proximate to the magnetically responsive finishing element andbetween the magnetically responsive finishing element and magneticdriving element; a step of applying an operative finishing motioncomprising a magnetically induced parallel operative finishing motion inthe interface between the semiconductor wafer surface being finished andthe finishing surface of the magnetically responsive finishing elementin order to remove the unwanted material.

A preferred embodiment of this invention is directed to a method ofrefining a semiconductor wafer having a finishing cycle time comprisinga step of providing a plurality of magnetically responsive finishingelements having a finishing surface free of any nonmagnetic drivingmechanism; a step of providing a plurality of magnetic driving elementshaving at least one driving mechanism; a step of providing a controlsubsystem having at least one semiconductor wafer finishing sensor forproviding finishing information; a step of positioning the semiconductorwafer being finished with a holder proximate to the plurality of themagnetic finishing elements and between the magnetically responsivefinishing element and the plurality of the magnetic driving elements; astep of applying an operative finishing motion comprising a magneticallyinduced parallel finishing motion between the semiconductor wafersurface being finished and the finishing surfaces of the plurality ofthe magnetically responsive finishing elements; and a step ofcontrolling in situ a control parameter with the finishing controlsubsystem after evaluating the finishing information.

A preferred embodiment of this invention is directed to an apparatus forrefining a workpiece surface comprising a plurality of magneticallyresponsive refining elements free of any nonmagnetic driving mechanism;a magnetic driving means spaced apart from the plurality of themagnetically responsive refining elements; a holder for a workpiecewhich exposes the workpiece surface for finishing, the holder situatedbetween the plurality of the magnetically responsive refining elementsand the magnetic driving means, and wherein the magnetic driving meansis for driving the plurality of the magnetically responsive refiningelements in a parallel operative refining motion against the workpiecesurface being finished.

A preferred embodiment of this invention is directed to an apparatus forrefining a workpiece surface comprising a magnetically responsiverefining element free of any nonmagnetic driving mechanism; a magneticdriving element operatively connected to a driving mechanism and whereinthe magnetic driving element is spaced apart from the magneticallyresponsive refining element; and a holder for a workpiece which exposesthe workpiece surface for finishing, the holder situated between themagnetically responsive refining element and the magnetic drivingelement and having an adjustable retainer ring.

A preferred embodiment of this invention is directed to an apparatus forrefining a workpiece surface comprising a plurality of magneticallyresponsive refining elements free of any physically connected movementmechanism; a plurality of magnetic driving elements operativelyconnected to at least one driving mechanism and wherein the plurality ofthe magnetic driving elements is spaced apart from the magneticallyresponsive refining element; a holder for a workpiece which exposes theworkpiece surface for refining to the plurality of the magneticallyresponsive refining element, the holder situated between the pluralityof the magnetically responsive refining elements and the at least onemagnetic driving element; and a refining control subsystem having anoperative workpiece sensor and magnetically responsive refining elementsensor.

A preferred embodiment of this invention is directed to a magneticfinishing element having a plurality of discrete finishing members forfinishing a semiconductor wafer comprising a plurality discretefinishing members wherein each discrete finishing member has a surfacearea of less than the surface area of the semiconductor wafer beingfinished, each discrete finishing member has an abrasive finishingsurface and a finishing member body, and a ratio of the shortestdistance across in centimeters of the discrete finishing member body tothe thickness in centimeters of each discrete finishing member body isat least 10/1; and at least one magnetic composite member has acorrosion resistant coating and the plurality of discrete finishingmembers is attached to the magnetic composite member.

A preferred embodiment of this invention is directed to a magneticfinishing element having a finishing layer with a finishing surface forfinishing a semiconductor wafer comprising the finishing surface layerhaving a finishing surface area of less than the surface area of thesemiconductor wafer being finished; and a magnetic composite memberwherein the magnetic composite member is attached to the finishingsurface layer and the magnetic composite member is protected with apolymeric corrosion protecting layer.

A preferred embodiment of this invention is directed to a magneticfinishing element having a finishing layer with finishing surface forfinishing a semiconductor wafer comprising the finishing surface layerhaving a finishing surface area of less than the surface area of thesemiconductor wafer being finished and a ratio of the shortest distanceacross in centimeters of the finishing surface layer to the thickness incentimeters of the finishing layer is at least 10/1, and a magneticmember wherein the magnetic composite member is attached directly orindirectly to the finishing surface layer.

A preferred embodiment of this invention is directed to an apparatus forrefining a workpiece surface comprising at least two refining elementshaving at least two different identification codes; at least two drivingmechanisms for at least two refining motions for the at least tworefining elements during at least a portion of the refining cycle time;a holder for a workpiece which exposes the workpiece surface forrefining; and an operative control subsystem having an operative sensor,a controller, and a processor and wherein the processor has access tothe at least two different refining element identification codes andwherein the processor has access to a processor readable media havingprocessing instructions to use the at least two different refiningelement identification codes to determine a change for at least onecontrol parameter during a refining cycle time. The apparatus can haveat least two different refining motions during the refining cycle time.The apparatus can have at least two independent refining motions duringthe refining cycle time. The apparatus at least two different,independent refining motions during the refining cycle time. At leastthree apparatus can be used in cooperation with each wherein each the atleast three apparatus have at least two different refining elementidentification codes forming a family at least six refining elementidentification codes, each being different from each other; each of theat least three apparatus have access to a processor having access to thefamily of at least six refining element identification codes; andwherein the processing instructions comprise the processing instructionsto use the family of at least six refining element identification codesto determine a change for at least one control parameter during arefining cycle time. The apparatus can include at least one electrodeand more preferably at least two electrodes.

Each of these embodiments (and elements thereof), alone and/or in acombination with other guidance contained herein, can improve therefining by adding versatility to the manufacturing method of theworkpiece, enhancing versatility of the refining apparatus, reducingequipment costs, reducing manufacturing costs of the workpiece, and/orimproving manufacturing yields and are illustrative examples ofpreferred embodiments.

A magnetic refining element having a plurality of magneticallyresponsive materials is preferred and having a multiplicity ofmagnetically responsive materials is more preferred. A magnetic refiningelement having a plurality of different magnetically responsivematerials is preferred and having a multiplicity of differentmagnetically responsive materials is more preferred. A magnetic refiningelement having a plurality of different, spaced apart magneticallyresponsive materials is preferred and having a multiplicity ofdifferent, spaced apart magnetically responsive materials is morepreferred. A method for refining wherein at least two of the pluralityof magnetically responsive refining elements have different refiningsurfaces is preferred. An apparatus and method for refining includingthe semiconductor wafer surface and the magnetically responsive refiningelements in an enclosed chamber and the magnetic driving mechanismoutside the enclosed chamber is preferred and an apparatus and methodfor refining including the semiconductor wafer surface and themagnetically responsive refining elements in an enclosed chamber and themagnetic driving mechanism is totally outside the enclosed chamber ismore preferred. These preferred embodiments can facilitate finishing byimproving control and reducing unwanted defects in refining.

A refining chamber can be preferred. A refining chamber wherein amagnetically responsive refining element and a workpiece holder areinside the refining chamber and wherein a magnetic driving element isoutside the refining chamber is preferred. A refining chamber forcontaining a magnetically responsive refining element and a workpieceholder and wherein a magnetic driving element is outside the refiningchamber is preferred. A refining chamber for containing a magneticallyresponsive refining element and a workpiece holder and wherein amagnetic driving mechanism is outside the refining chamber is alsopreferred. A refining chamber having an operative refining compositioninlet is preferred. A refining composition inlet which communicates fromthe inside of the chamber to a supply of refining composition ispreferred. A refining chamber having an operative outlet for a usedrefining composition is preferred. A refining composition outlet whichcommunicates from the inside of the refining chamber to the outside ofthe refining chamber is preferred. A refining chamber having at leastone inlet and outlet lines for the refining composition is preferred. Arefining chamber having an operative outlet for a spent refiningcomposition is preferred. A refining chamber which is gas tight duringat least a portion of the refining cycle time is preferred. A refiningchamber can help to reduce foreign contaminants which can reduceunwanted surface defects, improve manufacturing yields, and reduce wafermanufacturing cost.

FIGS. 17-31 give some useful details of preferred methods of refining.Although these figures are somewhat simplified for clarity those ofordinary skill in the art will generally be able to understand them anduse them given the teachings and guidance contained herein. As anillustrative example, storage of information can be performed atdifferent times including simultaneously with some steps (such as usingand storing at the same time or in a different time). As anotherillustrative example, storage of information can be done when sensinginformation and/or when using information. As another illustrativeexample, storage of information can be done when determining informationand/or when using information. Thus the steps can be completed usinggenerally known process control technology by using the teachings andguidance contained herein. As yet another example, a refining motion canbe applied independent of electro-refining. As yet another example,electro-refining and refining motion can be linked by a mathematicalalgorithm. As yet another example, electro-refining can follow onemathematical expression and refining motion can follow a differentmathematical expression.

A manufactured article having a processor readable medium with computerreadable instructions for performing the preferred embodiments of themethods disclosed herein is preferred. A manufactured article having acomputer readable medium with computer readable instructions forperforming the preferred embodiments of the methods disclosed herein ispreferred. A process controller having access to a manufactured articlehaving a processor readable medium with processor readable instructionsfor performing the preferred embodiments of the methods disclosed hereinis preferred. At least three process controllers wherein the at leastthree process controllers are in operative communication with eachother; and the at least three process controllers have access to amanufactured article having a processor readable medium with processorreadable instructions for performing the methods of embodiments of themethods disclosed herein is preferred. At least three processcontrollers wherein the at least three process controllers are inoperative communication with each other and the at least three processcontrollers have access to a manufactured article having a computerreadable medium with computer readable instructions for performing themethods of embodiments of the methods disclosed herein is preferred. Anapparatus for refining a workpiece having a process controller, theprocess controller having access to a manufactured article having acomputer readable medium with computer readable instructions forperforming the methods of embodiments of the methods disclosed herein ispreferred. A process controller having access to a manufactured articlehaving a computer readable medium with computer readable instructionsfor performing the methods of embodiments of the methods disclosedherein is preferred.

A computer-readable, program storage device encoded with instructionsthat, when executed by a processor, performs preferred embodiment ofmethods of planarizing and/or finishing disclosed herein is preferred. Acomputer-readable, program storage device encoded with instructionsthat, when executed by a computer performs preferred embodiment ofmethods of refining, planarizing, and/or finishing disclosed herein ismore preferred. A computer programmed to perform the preferred methodsof manufacturing disclosed herein is preferred. A processor and/orcomputer readable memory devices are generally known to those skilled inthe semiconductor manufacturing arts. Non-limiting illustrative examplesinclude compact disks, hard disks, floppy disks, and other computermedia generally useful in the computing arts.

Refining apparatus are generally illustrated with magnetic refiningelements. Other general refining elements are known which can begenerally adapted for preferred embodiments given the teachings andguidance contained herein. As non-limiting illustrative examples U.S.Pat. Nos. 6,159,080 to Talieh and 5,994,582 to Talieh can be generallybe adapted to use with at least two independently controlled refiningelements with independently controlled refining motions by those ofordinary skill in the semiconductor arts to give a new apparatusstructure, new method of functioning, and new and useful results byusing the teachings and guidance contained herein.

For electro-refining, some embodiments are preferred to improveversatility. A magnetic refining element having a plurality of operativeelectrodes and a multiplicity of electrodes is more preferred. Amagnetic refining element having an inoperative electro-refining surfaceproximate the operative electro-refining surface is also preferred. Amethod for refining including applying an operative voltage across thefirst operative electrode and the second operative electrode during atleast a portion of the refining cycle time removes material from thesemiconductor wafer surface is preferred. A method for refiningincluding applying an operative voltage across the first operativeelectrode and the second operative electrode during at least a portionof the refining cycle time adds material to the semiconductor wafersurface is preferred. A method for refining including controlling insitu a refining control parameter comprising at least in partcontrolling the current between each of the first operative electrodesand the second electrode is preferred and controlling the currentbetween a plurality of first operative electrodes and the secondelectrode is more preferred. An apparatus and method for refining asemiconductor wafer surface including an operative refining motion whichadds material with a current density of from 0.1 to 100 milliamperes persquare centimeter between the first and second electrodes is preferred.An apparatus and method for refining for refining the semiconductorwafer surface including an electro-refining motion which removesmaterial with a current density of from 0.1 to 100 milliamperes persquare centimeter between the first and second electrodes is preferred.An apparatus and method for refining the semiconductor wafer surfaceincluding an operative refining motion with a pressure in at least aportion of the interface between the semiconductor wafer surface and themagnetically responsive electro-refining element of from 0.1 to 10 psiis also preferred. A plurality of refining elements can be preferred.These preferred embodiments can facilitate refining and finishing byimproving control and reducing unwanted defects in refining.

Summary

As is generally known in the semiconductor wafer art, development ofactual preferred embodiments is generally accomplished in stages alongwith numerous process and design specific information. Given theteachings and guidance contained herein, preferred embodiments aregenerally implemented in stages while taking into account numerousbusiness, process, and product specific information by those generallyskilled in the semiconductor wafer arts. Although the implementation ofa preferred embodiment may have generally numerous steps while takinginto account the numerous business, process, and product specificinformation, implementation merely requires routine experimentation andeffort given the teachings and guidance contained herein. Thus althoughthe implementation may be somewhat time-consuming, it is nevertheless agenerally routine undertaking for those of ordinary skill in the arthaving the benefit of the information and guidance contained herein.Further, it will be readily apparent to those skilled in the generalsemiconductor wafer art that preferred elements can generally becombined with each other to form other preferred embodiments using theconfidential teachings and disclosures herein. In some discussionherein, generally known information, processes, procedures, andapparatus have not been belabored so as not to obscure preferredembodiments of the present invention.

Illustrative nonlimiting examples useful technology have referenced bytheir patents numbers and all of these patents are included herein byreference in their entirety for further general guidance andmodification by those skilled in the arts.

Applicant currently prefers a magnetic responsive refining elementhaving a unitary resilient body having a Shore Hardness A of about 60with discrete finishing surfaces attached thereto and where the discretefinishing surfaces have a surface area of about 2 to 6 die. Amagnetically responsive material composite comprising ferromagneticmaterial covered with a noncorroding protective cover is a preferredoption. A magnetic refining apparatus having multiple magneticallyresponsive refining elements in parallel operative refining motionsimultaneously is preferred. A control subsystem having multipleoperative sensors for improving in situ control is also preferred. Acurrently preferred non-corroding cover is an epoxy coating.Illustrative preferred organic polymers and polymer systems aredescribed herein above such as under the unitary resilient body and inthe discrete finishing member sections. Similar polymers can be used toform ferromagnetic composite with incorporated ferromagnetic particlesincorporated therein. A magnetically responsive refining element havinga tracking code is preferred. A magnetically responsive refining elementhaving an identification code is preferred.

Preferred methods of control have been disclosed using a preferredcontrol subsystem. A processor having access to a process model ispreferred. A processor having access to a cost of manufacture model ispreferred. A processor having access to a activity based cost ofmanufacture model is also preferred. A process model having access tohistorical performance is preferred. A processor having access to amemory device(s) is preferred. Determining a change during processcontrol parameter during a non-equilibrium process time period can bepreferred for some applications. Determining a change during processcontrol parameter during a non-equilibrium process time period andchanging the process control parameter during non-equilibrium processtime period can be more preferred for some applications. Determining achange during process control parameter during a non-equilibrium processtime period and changing the process control parameter a multiplicity oftimes during non-equilibrium process during the non-equilibrium timeperiod can be even more preferred for some applications. Determining achange during process control parameter that is in a non-steady statetime period can be preferred for some applications. Determining a changefor a process control parameter using progress of refining informationin real time and changing the process control parameter during thenon-steady state time period can be more preferred for someapplications. Determining a multiplicity of changes for a processcontrol parameter using progress of refining information in real timeand changing the process control parameter a multiplicity of timesduring the non-steady state time period can be more preferred for someapplications. The new magnetic finishing apparatus operates in a new anduseful manner to produce a new and useful result.

For refining of semiconductor wafers having low-k dielectric layers,refining aids, more preferably reactive refining aids, are preferred. Arefining composition comprising at least in part a gaseous reactiverefining aid can be preferred for low-k dielectric layers comprising atin part a hydrocarbon material. For finishing of semiconductor wafershaving low-k dielectric layers, finishing aids, more preferablylubricating aids, are preferred. Illustrative nonlimiting examples oflow-k dielectrics are low-k polymeric materials, low-k porous materials,and low-k foam materials. A high flexural modulus organic syntheticresin comprising an engineering polymer is preferred for some refiningapplications. A magnetic refining element having a refining layer with arefining surface for refining a semiconductor wafer and a magneticcomposite member wherein the magnetic composite member is attached tothe refining surface layer and the magnetic composite member isprotected with a polymeric corrosion protecting layer is a preferredrefining element for some applications. A magnetic finishing elementhaving a finishing layer with a finishing surface for finishing asemiconductor wafer and a magnetic composite member wherein the magneticcomposite member is attached to the finishing surface layer and themagnetic composite member is protected with a polymeric corrosionprotecting layer is a preferred finishing element for some applications.The corrosion protecting covering on the magnetically responsive membercan help prevent unwanted corrosion products and unwanted surface damageto particularly sensitive semiconductor wafer such as those having low-kdielectrics.

The scope of the invention should be determined by the appended claimsand their legal equivalents, rather than by the preferred embodimentsand details are discussed herein.

1. A method of refining a first and a second layer of a semiconductorwafer, each having an effect on a cost of manufacture, the methodcomprising: applying a first refining energy to the first layer of thesemiconductor wafer for a first layer refining; sensing a real timeprocess information for the first layer of the semiconductor waferduring the first layer refining with an at least one operative sensorfor the first layer refining; determining an improvement in real timefor an at least one first layer control parameter “A” using a trackingcode of the semiconductor wafer and the real time process informationfor the first layer of the semiconductor wafer with an operative controlsubsystem for the first layer refining; controlling in real time the atleast one first layer process control parameter “A” to change a firstsemiconductor wafer surface during the first layer refining of the firstlayer of the semiconductor wafer; storing for future availability astored information related to the at least one first layer processcontrol parameter “A”, the tracking code of the semiconductor wafer, andthe real time process information for the first layer of thesemiconductor wafer; applying a second refining energy to the secondlayer of the semiconductor wafer having an at least one second layercontrol parameter “B” for a second layer refining; sensing a real timeprocess information for the second layer of the semiconductor waferduring the second layer refining with an at least one operative sensorfor the second layer refining; determining an improvement in real timefor the at least one second layer control parameter “B” using at least aportion of the stored information related to the tracking code of thesemiconductor wafer, the real time process information for the firstlayer of the semiconductor wafer, and the real time process informationfor the second layer of the semiconductor wafer with an operativecontrol subsystem for the second layer refining; and controlling in realtime the at least one second layer process control parameter “B” tochange a second semiconductor wafer surface during the second layerrefining of the second layer of the semiconductor wafer; and using an atleast one process model and using a predictive control during themethod.
 2. The method according to claim 1 wherein controlling in realtime the at least one first layer process control parameter “A”comprises controlling in real time the at least one first layer processcontrol parameter “A” to change a removal of a material from the firstsemiconductor wafer surface during the refining of the first layer ofthe semiconductor wafer.
 3. The method according to claim 1 whereinapplying the first refining energy comprises applying at least twoindependent refining energies.
 4. The method according to claim 1wherein applying the first refining energy comprises applying at leasttwo different refining energies.
 5. The method according to claim 1wherein applying the first refining energy comprises applying at leasttwo different, independent refining energies.
 6. The method according toclaim 1 wherein applying the first refining energy comprises applying atleast one electrochemical energy for removing a material from the firstsemiconductor wafer surface.
 7. The method according to claim 1 whereinapplying the second refining energy comprises applying at least twoindependent refining energies.
 8. The method according to claim 1wherein applying the second refining energy comprises applying at leasttwo different refining energies.
 9. The method according to claim 1wherein applying the second refining energy comprises applying at leasttwo different, independent refining energies.
 10. The method accordingto claim 1 wherein applying the second refining energy comprisesapplying at least one electrochemical energy for removing a materialfrom the second semiconductor wafer surface.
 11. The method according toclaim 1 wherein applying the second refining energy comprises applyingat least one electrochemical energy for adding a material to the secondsemiconductor wafer surface.
 12. The method according to claim 1wherein: controlling in real time the at least one first layer processcontrol parameter “A” comprises controlling in real time the at leastone first layer process control parameter “A” to change a removal of amaterial from the first semiconductor wafer surface during the firstlayer refining of the semiconductor wafer; and controlling in real timethe at least one second layer process control parameter “B” comprisescontrolling in real time the at least one second layer process controlparameter “B” to change a removal of the material from the secondsemiconductor wafer surface during the refining of the second layer ofthe semiconductor wafer.
 13. The method according to claim 1 wherein:applying the first refining energy comprises applying at least twoindependent refining energies; and applying the second refining energycomprises applying at least two independent refining energies.
 14. Themethod according to claim 1 wherein: applying the first refining energycomprises applying at least two different refining energies; andapplying the second refining energy comprises applying at least twodifferent refining energies.
 15. The method according to claim 1wherein: applying the first refining energy comprises applying at leasttwo different, independent refining energies; and applying the secondrefining energy comprises applying at least two different, independentrefining energies.
 16. The method according to claim 1 wherein: applyingthe first refining energy comprises applying at least oneelectrochemical energy for removing a material from the firstsemiconductor wafer surface; and applying the second refining energycomprises applying at least one electrochemical energy for removing thematerial from the second semiconductor wafer surface.
 17. The methodaccording to claim 1 wherein: applying the first refining energycomprises applying at least one electrochemical energy for adding amaterial to the first semiconductor wafer surface; and applying thesecond refining energy comprises applying at least one electrochemicalenergy for adding the material to the second semiconductor wafersurface.
 18. The method according to claim 1 wherein using an at leastone process model comprises using at least in part a first principlesprocess model and at least in part an empirically based process modelfor the predictive control during the method.
 19. The method accordingto claim 18 additionally comprising: using a manufactured article havinga processor readable medium with processor readable instructions forperforming the method of claim
 18. 20. The method according to claim 1wherein using an at least one process model comprises using at least inpart a first principles process model and at least in part anempirically based process model for the predictive control during themethod; and wherein the semiconductor wafer comprises a semiconductorwafer having a diameter of at least 300 millimeter; and additionallycomprising: using a refining element having a refining elementidentification code during the method.
 21. The method according to claim20 additionally comprising: using a manufactured article having aprocessor readable medium with processor readable instructions forperforming the method of claim
 20. 22. The method according to claim 5wherein using an at least one process model comprises using at least inpart a first principles process model for the predictive control duringthe method.
 23. The method according to claim 22 additionallycomprising: using a manufactured article having a processor readablemedium with processor readable instructions for performing the method ofclaim
 22. 24. The method according to claim 6 wherein using an at leastone process model comprises using at least in part a first principlesprocess model and at least in part an empirically based process modelfor the predictive control during the method; and wherein thesemiconductor wafer comprises a semiconductor wafer having a diameter ofat least 300 millimeters.
 25. The method according to claim 15 whereinusing an at least one process model comprises using at least in part afirst principles process model for the predictive control during themethod.
 26. The method according to claim 25 additionally comprising:using a manufactured article having a processor readable medium withprocessor readable instructions for performing the method of claim 25.27. The method according to claim 15 wherein using an at least oneprocess model comprises using at least in part a first principlesprocess model; and additionally comprising: using a refining elementhaving a refining element identification code during the method.
 28. Themethod according to claim 27 additionally comprising: using amanufactured article having a processor readable medium with processorreadable instructions for performing the method of claim
 27. 29. Themethod according to claim 16 wherein using an at least one process modelcomprises using at least in part a first principles process model; andwherein the semiconductor wafer comprises a semiconductor wafer having adiameter of at least 300 millimeters.
 30. The method according to claim29 additionally comprising: using a manufactured article having aprocessor readable medium with processor readable instructions forperforming the method of claim
 29. 31. The method according to claim 17wherein using an at least one process model comprises using at least inpart a first principles process model; and wherein the semiconductorwafer comprises a semiconductor wafer having a diameter of at least 300millimeters.
 32. The method according to claim 31 additionallycomprising: using a manufactured article having a processor readablemedium with processor readable instructions for performing the method ofclaim
 31. 33. The method according to claim 1 wherein at least one ofapplying a first refining energy or applying a second refining energycomprises applying an at least one electrochemical energy for adding amaterial and wherein the semiconductor wafer comprises a semiconductorwafer having a low-k layer having a k value of at most 3.0; and whereinusing an at least one process model comprises using at least in part afirst principles process model for the predictive control during themethod.
 34. The method according to claim 1 wherein at least one ofapplying a first refining energy or applying a second refining energycomprises applying an at least one electrochemical energy for removing amaterial and wherein the semiconductor wafer comprises a semiconductorwafer having a low-k layer having a k value of at most 3.0; and whereinusing an at least one process model comprises using at least in part afirst principles process model for the predictive control during themethod.
 35. The method according to claim 34 wherein applying a firstrefining energy comprises applying at least two different independentrefining energies or wherein applying a second refining energy comprisesapplying at least two different independent refining energies.
 36. Themethod according to claim 35 additionally comprising: using amanufactured article having a processor readable medium with processorreadable instructions for performing the method of claim
 35. 37. Themethod according to claim 1 wherein using an at least one process modelcomprises using at least in part a first principles process model forthe predictive control during the method and wherein the semiconductorwafer comprises a semiconductor wafer having a low-k layer having a kvalue of at most 3.0; and additionally comprising: using a refiningelement having a refining element identification code during the method.38. The method according to claim 37 additionally comprising: using amanufactured article having a processor readable medium with processorreadable instructions for performing the method of claim
 37. 39. Themethod according to claim 1 wherein at least one of applying a firstrefining energy and applying a second refining energy comprise applyingat least one electrochemical energy for adding a material and applyingat least one electrochemical energy for removing the material andwherein the semiconductor wafer comprises a semiconductor wafer having alow-k layer having a k value of at most 3.0; and wherein using an atleast one process model comprises using at least in part a firstprinciples process model for the predictive control during the method.40. The method according to claim 39 additionally comprising: using amanufactured article having a processor readable medium with processorreadable instructions for performing the method of claim
 39. 41. Themethod according to claim 39 additionally comprising: supplying a groupof an at least three apparatus wherein each member of the group of theat least three apparatus has at least two refining elements and an atleast two different refining element identification codes, the refiningelement identification codes forming a family of an at least sixrefining element identification codes, each refining elementidentification code being different from each other and wherein each ofthe at least three apparatus includes at least two electrodes; using anat least one processor having access to the family of the at least sixrefining element identification codes for the at least three apparatus;and using a manufactured article having a processor readable medium withprocessor readable instructions which use the family of the at least sixrefining element identification codes to determine a change for an atleast one control parameter during a refining cycle time.
 42. The methodaccording to claim 1 wherein applying a first refining energy comprisesapplying at least two different independent electrochemical refiningenergies and wherein applying a second refining energy comprisesapplying at least two different independent electrochemical refiningenergies and wherein the semiconductor wafer comprises a semiconductorwafer having a low-k layer having a k value of at most 3.0 and whereinusing an at least one process model comprises using at least in part afirst principles process model for the predictive control during themethod.
 43. The method according to claim 42 additionally comprising:using a manufactured article having a processor readable medium withprocessor readable instructions for performing the method of claim 42.44. The method according to claim 42 additionally comprising: supplyinga group of an at least three apparatus wherein each member of the groupof the at least three apparatus has at least two refining elements andan at least two different refining element identification codes, therefining element identification codes forming a family of an at leastsix refining element identification codes, each refining elementidentification code being different from each other and wherein each ofthe at least three apparatus includes at least two electrodes; using anat least one processor having access to the family of the at least sixrefining element identification codes for the at least three apparatus;and using a manufactured article having a processor readable medium withprocessor readable instructions which use the family of the at least sixrefining element identification codes to determine a change for an atleast one control parameter during a refining cycle time.
 45. The methodaccording to claim 1 wherein the semiconductor wafer comprises asemiconductor wafer having a low-k layer having a k value of at most3.0; and wherein using an at least one process model comprises using atleast in part a first principles process model for the predictivecontrol during the method.
 46. The method according to claim 45additionally comprising: using a manufactured article having a processorreadable medium with processor readable instructions for performing themethod of claim
 45. 47. The method according to claim 45 additionallycomprising: data mining the stored information.
 48. The method accordingto claim 1 wherein the semiconductor wafer comprises a semiconductorwafer having a low-k layer having a k value of at most 3.0; and whereinusing an at least one process model comprises using at least in part afirst principles process model and at least in part an empirically basedprocess model for the predictive control during the method; andadditionally comprising: using a refining element having a refiningelement identification code during the method.
 49. The method accordingto claim 48 additionally comprising: using a manufactured article havinga processor readable medium with processor readable instructions forperforming the method of claim
 48. 50. The method according to claim 48additionally comprising: data mining the stored information.
 51. Themethod according to claim 1 wherein the semiconductor wafer has adiameter of at least 300 millimeters and wherein the semiconductor waferhas a low-k layer having a k value of at most 3.0; and additionallycomprising: changing the cost of manufacture by an appreciable amount.52. The method according to claim 51 additionally comprising: using amanufactured article having a processor readable medium with processorreadable instructions for performing the method of claim
 51. 53. Themethod according to claim 1 wherein using an at least one process modelcomprises using at least in part a first principles process model and atleast in part an empirically based process model for the predictivecontrol during the method; and additionally comprising: changing thecost of manufacture by an appreciable amount.
 54. The method accordingto claim 53 additionally comprising: using a manufactured article havinga processor readable medium with processor readable instructions forperforming the method of claim
 53. 55. The method according to claim 1wherein using an at least one process model comprises using at least inpart a first principles process model and at least in part anempirically based process model for the predictive control during themethod and wherein the semiconductor wafer has a diameter of at least300 millimeters and wherein the semiconductor wafer has a low-k layerhaving a k value of at most 3.0 and additionally comprising: changingthe cost of manufacture by an appreciable amount.
 56. The methodaccording to claim 55 additionally comprising: using a manufacturedarticle having a processor readable medium with processor readableinstructions for performing the method of claim
 55. 57. The methodaccording to claim 55 additionally comprising: supplying a group of anat least three apparatus wherein each member of the group of the atleast three apparatus has at least two refining elements and an at leasttwo different refining element identification codes, the refiningelement identification codes forming a family of an at least sixrefining element identification codes, each refining elementidentification code being different from each other; using an at leastone processor having access to the family of the at least six refiningelement identification codes for the at least three apparatus; and usinga manufactured article having a processor readable medium with processorreadable instructions which use the family of the at least six refiningelement identification codes to determine a change for an at least onecontrol parameter during a refining cycle time.
 58. The method accordingto claim 1 additionally comprising: supplying a group of an at leastthree apparatus wherein each member of the group of the at least threeapparatus has at least two refining elements and an at least twodifferent refining element identification codes, the refining elementidentification codes forming a family of an at least six refiningelement identification codes, each refining element identification codebeing different from each other; using an at least one processor havingaccess to the family of the at least six refining element identificationcodes for the at least three apparatus; and using a manufactured articlehaving a processor readable medium with processor readable instructionswhich use the family of the at least six refining element identificationcodes to determine a change for an at least one control parameter duringa refining cycle time.
 59. The method according to claim 58 wherein atleast one of applying a first refining energy or applying a secondrefining energy comprises applying an at least one electrochemicalenergy for removing a material and wherein using an at least one processmodel comprises using at least in part a first principles process modelfor the predictive control during the method.
 60. The method accordingto claim 59 additionally comprising: changing the cost of manufacture byan appreciable amount.
 61. The method according to claim 59 additionallycomprising: data mining the stored information.